Oct 6, 2026

[paper] Open Source EZ130 8T standard cell library

Oscar Castaneda, Lavinia Recchioni, Tobias Senti, Flurin Cahenzli, Marco Ferroni, Thorben Heekenjann, Robert Kenter, Stefan Odermatt, Daniel Richner, Gabriel Altendorfer, Davide Cannone, Miguel Correa, Ivan Herger, Lars Kroger, Nicolas Nanzer, Darja Nonaca, Christopher Reinwardt, Lukas Winklhofer, Enrico Zelioli, Yiheng Zhang, Yingxue Zhang, Domenic Keller, Seyed Hadi Mirfarshbafan, Zerun Jiang, Beat Muheim, Arianna Rubino, Jeremy Guichemerre, Frank K. Gurkaynak, and Christoph Studer
An Open-Source Standard-Cell Library for IHP 130 nm Developed by Students
arXiv:2609.29965v1 [cs.AR] 24 Sep 2026

1. Department of Information Technology and Electrical Engineering, ETH Zurich, Switzerland
* The open-source EZ130 8T standard-cell library is available at https://ez.ethz.ch

Abstract: Standard-cell libraries form the critical interface between transistor-level circuit design and automated digital design flows, yet their design and characterization are rarely covered in depth in digital VLSI courses. This paper presents VLSI 5, a graduate-level course at ETH Zurich in which students design, lay out, characterize, and integrate their own standard cells using IHP’s open-source 130 nm SG13G2 process design kit. In the first course offering, 19 students developed EZ130 8T, an open-source eight-track standard-cell library comprising 220 cells. We evaluate successive library versions using eight synthesis benchmarks, across which EZ130 8T achieves significant area reduction compared to the SG13G2 library at competitive timing. For a postlayout 8×8 matrix-vector multiplier, EZ130 8T reduces cell area by 35% and energy by 39% while maintaining virtually the same clock period. The library has already been adopted in other ETH Zurich VLSI courses, enabling the creation of chips entirely designed by students down to the transistor level.
FIG: a.) ETH Zurich course series on digital VLSI design. By teaching students to create a standard-cell library, the new VLSI 5 course closes the gap between transistor-level and HDL-level IC design;
b.) and c.) Layout of two example standard cells from the EZ130 8T library.

Aknowlegements: This work has received funding from the Swiss State Secretariat for Education, Research, and Innovation (SERI) under the SwissChips initiative. The authors thank Cadence for their support by providing licenses to design and characterize the EZ library. The authors also thank H. Pretl, T. Benz, and P. Sauter for their feedback on preliminary versions of the EZ library.

[paper] n-MOS pseudo-resistor nA current reference

Bruni, Italo, Mariane Petraglia, and Fabián Olivera
Area-efficient nanoampere current reference employing
a temperature-controlled n-MOS pseudo-resistor
AEU IJ EC (2026): 156642.
DOI: 10.1016/j.aeue.2026.156642

Abstract: This paper presents a CMOS current reference topology that avoids the use of large-area resistors by using a temperature-controlled pseudo-resistor. The proposed technique for achieving a reference current consists of applying proportional to absolute temperature (PTAT) and complementary to absolute temperature (CTAT) voltages to the drain and gate of an n-MOS EKV-based pseudo-resistor, respectively, thereby stabilizing its current against temperature variations. Two current reference design versions, namely D01 and D02, were implemented using a 180 nm technology. Extensive post-layout simulation results for design D01 show a typical reference current of 6.30 nA, an average temperature coefficient (TC) of 414 ppm/C (nominal 219 ppm/C) across a range from −40C to 120C, and a line regulation (LR) of 11.76 %/V. To improve LR, design D02 was developed, achieving a significantly optimized LR of 0.33 %/V while maintaining a typical current of 6.22 nA and an average TC of 401 ppm/C (nominal 191 ppm/C) over the same temperature range. The area-efficient technique enables compact silicon areas of 0.0018 mm2 and 0.0020 mm2 for D01 and D02, respectively.

FIG: Schematics of the CTAT voltage generator topologies: .a) 3T; b.) 6T
and its layout implementation of the current reference designs: c.) D01; d.) D02.

Acknowledgment: This work was supported in part by the Brazilian research funding agencies CNPq, FAPERJ, and Coordenação de Aperfeiçoamento de Pessoal de Nível Superior - Brasil (CAPES) Finance Code 001; by grant 307092/2025-9, funded by CNPq/MCTI/FNDCT N∘18/2024; and by grant E-26/204.222/2025 (SEI-260003/020616/2025), founded by FAPERJ JCNE .

Oct 4, 2026

[webinar] Colombia in OpenSilicon Age

IEEE SSCS: Colombia in OpenSilicon Age

  • Date: Thursday, October 8, 2026
  • Time: 1:00 PM – 2:30 PM (Colombia, GMT-5)
  • Platform: Cisco Webex
  • Access: Free/Open access

This open online event is the first IEEE SSCS Colombia session. It shares a vision for creating a strong microelectronics ecosystem in Colombia by bringing universities and industry together and helping develop highly skilled engineers. The event will review the current state of microelectronics in Colombia, discuss the future of integrated circuit (IC) design, present recent semiconductor policy initiatives, and explain the goals of the IEEE SSCS Colombia chapter. Speakers from Colombia and abroad will share their experience in IC design, open-source silicon, semiconductor education, and industry development. The session aims to encourage collaboration between academia, industry, and government to support the growth of the semiconductor sector in Colombia.

Featured Panelists and Keynote Speakers

  • Made in Colombia: Review of Colombian Microelectronics
    Javier Ardila, Onsilicon, UIS and President, IEEE SSCS
  • ColombiaThe Global Map of CI Design: Tools, Foundry and Methodology
    Hugo Hernández, Teradar, Boston, MA
  • OpenSilicon Opportunities
    Fernando Guarín IEEE Division 1
  • Bill for the promotion of the electronics and semiconductor industry
    Lorena García Founder, Colombian Network of Electronics and Semiconductors


Oct 1, 2026

IEEE LA & Caribbean Semi Summit

IEEE Latin America & the Caribbean
Semiconductor Summit

LACSS 2026 will bring together leaders from industry, government, academia, research institutions and the investment community to explore Latin America and the Caribbean’s role in the rapidly evolving global semiconductor ecosystem.

The two-day (Oct. 1-2) program will examine regional capabilities and opportunities across semiconductor design, talent development, advanced manufacturing, packaging and testing, supply chains, investment, public policy, research, critical technologies and international cooperation. The IEEE EDS/CASS MQ Semiconductors in Latin America will follow on the third day (Oct.3)

DAY 1 — Academia and Industry: Building Talent, Research and Innovation
Thursday, October 1st, 2026

Opening

08:30–09:00

Opening Ceremony

Ivan Armuelles, Chair IEEE LACSS 2026

Juan Pimiento, SENACYT, Panama

09:00–09:30

Overview of the Semiconductor Industry Today and Opportunities for Latin America through the IEEE Open Silicon Initiative
Fernando Guarin, IEEE Division I, Director - GlobalFoundries (Retired) / IBM (Retired), USA

Building Semiconductor Talent: National Experiences from Latin America

Moderator: Fernando Guarín, IEEE

09:30–09:50

Building Panama's National Semiconductor Talent Pipeline
Zoila De Castillo, C-TASC, Panama

09:50–10:10

Brazil´s Semiconductor Industry and Design House Ecosystem
Jacobus Swart, University of Campinas (UNICAMP) / INCT NAMITEC, Brazil

10:10–10:30

The Kutsari initiative and strategy for the future (virtual)
Edmundo Gutierrez, Kutsari (National Center for Semiconductor Design in Mexico), Mexico

10:30–11:00

Networking Coffee Break

Electronic Design Automation

Moderator: Ricardo Reis, UFRGS, Brazil

11:00–12:30

Panel: EDA Innovation and Latin America’s Role in the Global Semiconductor Ecosystem

Antonio de la Serna, Siemens EDA

Victor Grimblatt, Synopsys

Marcelo Da Silva, Cadence

12:30–14:00

Lunch

Talent Development and Industrial Capabilities

Moderator: Carlos Silva, PUCP, Peru

14:00–14:30

Talent: the keyword for the development of semiconductors

Ricardo Reis, Institute of Informatics, Federal University of Rio Grande do Sul (UFRGS), Brazil

14:30–15:45

Panel: Preparing Semiconductor Talent–Industry and University Experiences

Rodrigo Jaramillo, Circuify Semiconductors, Mexico

Alfredo Arnaud, Universidad Católica del Uruguay, Uruguay

Victor Grimblatt, Synopsys, Chile

Amílcar Josué Véliz Solares, Universidad Galileo, Guatemala

Javier Marte Michelen, Pontificia Universidad Católica Madre y Maestra, Dominican Republic

15:45–16:15

Networking Coffee Break

16:15–16:45

Assembly, Testing and Packaging: Opportunities for Latin America

Joel Molina, INAOE, Mexico

Day 1 Wrap-up

16:45–17:00

Day 1 Wrap-Up

Ivan Armuelles, Chair IEEE LACSS 2026

18:00–20:00

Welcome Reception (off-site)

La Casa - Ciudad del Saber


DAY 2 — Government and Industry: Policy, Investment and Regional Strategy
Friday, October 2nd, 2026

08:30–08:45

Day 2 Kick-off

Start of Day 2: summary of the previous day and agenda of the day

Global Policy, Cooperation and Investment

Moderator: Erik Heilman, IEEE-USA

08:45–09:30

Global Policy Perspectives for Semiconductor Development

Filipe Silva, Semiconductors Team Lead, OECD (virtual)

09:30–10:00

Pax Silica and the Global Semiconductor Ecosystem: Implications for Latin America and the Caribbean (virtual)

Akhil Ramesh, PAC Forum

10:00–10:30

Panama’s Semiconductor Strategy (TBC)

Victor Sanchez, C-TASC AIP, Panama

10:30–11:00

Networking Coffee Break

The Semiconductor Policy Playbook: Regulation, IP and Regional Development

Moderator: TBC

11:00–12:20

Panel: Policies and Partnerships for Latin American Semiconductor Ecosystems

Adão Villaverde, Brazil

Mayté Milián, Guatemala

Nestor García Romero, Mexico

Lorena Garcia, Colombia

12:20–12:30

IEEE Division I–Synopsys MoU Signing Ceremony: Semiconductor Workforce Development
Fernando Guarín, IEEE Division I

Victor Grimblatt, Synopsys

12:30–14:00

Lunch

Semiconductor Design, Manufacturing and Entrepreneurship

Moderator: Lorena Garcia, Alianza E, Colombia

14:00–15:30

Panel: Building Semiconductor and Hardware Businesses in Latin America

Rodrigo Jaramillo, Circuify Semiconductors, Mexico

Israel Mejia, QSM, Mexico (virtual)

Gabriel Ortiz, Pixart, Argentina

Alfonso Chacon, Rydev, Costa Rica

Javier Ardila, OnSilicon, Colombia (virtual)

15:30–16:00

Networking Coffee Break

Expanding Access to Semiconductor Design, Prototyping and Manufacturing

Moderator: Joel Molina, INAOE, Mexico

16:00–17:00

Panel: Expanding Access to Semiconductor Design, Prototyping and Manufacturing

Pat Deegan, Tiny Tapeout

Mitchell Hsing, InchFab

Alfonso Torres, INAOE (virtual)

FET 100

Moderator: Arokia Nathan, IEEE EDS, USA

17:00–17:45

FET100

Speakers: Fernando Guarin, Jacobus Swart.

17:45–18:00

Closing - LACSS 2027 announcement

Ivan Armuelles

Ricardo Reis

18:00

End of LACSS


DAY 3 — 2026 IEEE EDS/CASS MQ Semiconductors in Latin America
Saturday, October 3rd, 2026
Universidad De Panama Auditorio (Piso 3), Facultad De Informática, Electrónica Y Comunicación

IEEE EDS/CASS MQ Session: 
Exploring Innovation, Research, and Opportunities for a Semiconductor Future
in the Caribbean
8:00–8:15 Opening Ceremony — Registration and Welcome Remarks
8:15–8:45 Low Power Design for Sustainable Manufacturing in Agribusiness
Victor Grimblatt
8:45–9:15 Embedded Timing: A New Scaling Layer for Compute at System Scale
Rodrigo Calderon
9:15–9:45 Reliability Topics for Advanced Semiconductors
Fernando Guarin
9:45–10:15 Physical Design Automation: From Past to Future
Ricardo Reis
10:15–10:45 Networking Coffee Break
10:45–11:15 Brazil’s Semiconductor Industry and Design House Ecosystem
Jacobus Swart
11:15–11:45 Oxide Electronics
Arokia Nathan
11:45–12:15  Dielectrics Materials from Field Effect Transistors to In-Memory Computing
Durga Misra
12:15–13:30  Lunch



Sep 30, 2026

[EUMW.EU] IHP Open Source Toolchain

Open-source Toolchain in RF and Digital Design
08:30 - 12:50; Monday 5 October 2026
European Microwave Week 

The European Chips Act serves as a strategic roadmap to secure technological sovereignty by aiming for a 20% global market share in semiconductors by 2030. The goal is to minimize the geopolitical supply chain risks and foster a self-sufficient ecosystem. Democratization of hardware development through the development of open-source EDA tools is a key pillar in these aspects. This would lower the entry barriers for SMEs and researchers and ultimately accelerate a collaborative and transparent era of European silicon innovation. There are multiple EU funded projects have started from last few years. These projects are set to offer robust process design kits (PDK) for open-source tools. In parallel, existing open-source tools for IC design are being further enhanced to include necessary functionalities for complete design flow for digital, analogue and RF design. Aligning with above mentioned goals, multiple private, academic, and commercial entities have stepped up towards the development. This workshop aims to share a glimpse of activities in open-source EDA tools developments and chip design activities in Europe. It would begin with a talk about current EU projects and the statuses in open-source EDA development. Then there will be two talks about digital and RF design flow using open-source tools. The final talk is about electro-magnetic simulation for RF circuits. Overall, this workshop is targets to publicize the open-source activities towards the building of a collaborative society in chip design domain. 

The event is aimed at IC designers, researchers, PhD candidates and engineers who already have a basic understanding of chip design and EDA workflows. Familiarity with digital, analogue or RF design will help you get the most from the sessions.

This workshop, chaired by the IHP Team: Corrado Carta, Sergei Andreev, and Farabi Ibne Jamal, gives you a practical view on the following Open-Source R&D Topics:
  • European Open-Source EDA projects currently stand
    • Sergei Andreev, IHP
  • How digital design flows can be built with Open-Source tools
    • Frank Kagan Gurkaynak, ETH Zürich
  • How Open-Source tools are being applied to RF design 
    • Harald Pretl, Johannes Kepler Universität Linz
  • How Open-Source EM simulation fits into RF circuit development
    • Giovanni Di Pietrantonio, IHP and Volker Mühlhaus, MCS, GmbH
Join the IHP OpenPDK Team if you want to understand where open-source chip design is heading, what is already usable today, and how these tools could complement your own work. Register at the EuMW website.






Sep 29, 2026

IEEE EDS/SSCS/CAS Mini-Colloquium

Friday 11 September 2026
UIB; Sa Riera Building
C/ de Miquel dels Sants Oliver, 2
07122 Palma

Professors Benjamin Iniguez, URV and Rodrigo Picos, UIB, have organize joint IEEE EDS/SSCS/CAS Mini-Colloquium as an integral part of the recent ESSERC2026 in Palma de Mallorca. All the MQ participants followed the MQ program as follows:

Mini-Colloquium Agenda
9:00 - 09:05 Opening

9:05-9:15 Tribute to Michael S. Shur

9:05-9:15 Tribute to José Epifânio da Franca 

9:15-10:05 Leveraging semiconductor technology for the benefit of society
Fernando Guarin (Director of IEEE Division I)

10:05-10:55 Power efficient WBG devices for the green transition
Mikael Ostling (KTH, SE)

10:55-11:25 Coffee Break

11:25-12:15 Holistic solutions to future computing - not only scaling
Francesca Iacopi (Purdue University, US)

12:15-13:05 Status of the Compact modeling and its Verilog-A standardization
Wladek Grabinski (MOS-AK, CH and IHP OpenPDK, DE)

13:05-14:25 Lunch

14:25-15:15 Graphene thin film technology for neural interfaces
José Antonio Garrido (ICN2, Barcelona, Spain)

15:15-16:05 Energy-Efficient Analog IC Design:
Exploring Solutions at Device, Circuit and System Levels
Antonio López (Public University of Navarra, Spain)

[paper] TCAD Modeling of SB Diode

Pedro Paulo Pessoa Oliveira1,2, Andreas Mai1,3, Norbert Herfurth1, 
and Davies William de Lima Monteiro2
TCAD Modeling of Schottky-Diode in an open-source SiGe BiCMOS technology
In 2026 40th Symposium on Microelectronics Technology and Devices 
SBMicro, pp. 1-4. IEEE, 2026
DOI: 10.1109/SBMicro70495.2026.11684441

1. IHP, Frankfurt (Oder), Germany
2. Department of Electrical Engineering, UFMG - Belo Horizonte-MG, Brazil
3. University of Applied Sciences Wildau, Germany

Abstract: Accurate simulation of Schottky barrier diodes (SBDs) is challenging because standard idealized models fail to capture non-ideal interface physics, such as Fermi-level pinning and image-force lowering. This paper presents an enhanced Technology Computer-Aided Design (TCAD) methodology to model an SBD from the IHP SG13G2 130-nm open-source SiGe BiCMOS technology. To overcome limitations of conventional simulations that often rely on oversimplified assumptions and empirical fitting, this work explicitly incorporates interface en- ergy states into the simulation, specifically modeling the fun- damental pinning mechanisms driven by Metal-Induced Gap States (MIGS). By calibrating the TiSi2/Si interface using the theoretical slope parameter, a value of 0.503 V was determined for the zero-bias barrier height. The resulting physics-based model captures the true rectifying nature of the contact and accurately reproduces the electrical characteristics targeted by the empirical model, achieving a nominal forward voltage drop of 0.39 V and a realistic reverse leakage current of 29.3 nA at -2.5 V. Ultimately, this paper shows the innovation and education gain of open- source foundry data by showcasing an open innovation path for a targeted near-industry device development flow.
FIG: a.) Energy band diagram of the Schottky diode at V=0V. Thecoordinate x = 0 corresponds to the TiSi2/n-Si Schottky interface. The inset displays the 2D device schematic, with the solid black line indicating the multi-segment cut-path used to extract the energy levels across the anode, n-buried layer and n-well RT to cathode contact. b.) Comparison of the simulated DC current-voltage (IV) characteristics between the proposed TCAD model and the standard SPICE macromodel.

Acknowledgment: The authors thank IHP for the open-source PDK and the collaborative research. They also thank Universidade Federal de Minas Gerais (UFMG) and the Brazilian Microelectronics Society (SBMicro) for supporting this work. Finally, gratitude is extended to S. Srivastava and B. Sake for their valuable guidance.

Sep 28, 2026

[NanoIC] Workshop

NanoIC Pilot Line Workshop
Next logic, memory, and chiplet technologies to enable future system innovation
October 1, 2026; Sede Turismo Andaluz; 40 Compañía Str. Málaga, Spain

Workshop Agenda

10:00 - 10:10 Welcome
10:10 - 10:30 Marie Garcia Bardon 
Short Introduction to EU Chips Act NanoIC Pilot Line
10:30 - 11:30 Nicolas Pantano 
Enabling Chiplet Architectures Through Advanced Packaging And High-Density Interconnects
11:30 - 12:00 Coffee break
12:00 - 13:00 Fernando García Redondo 
Opportunities in memory scaling: design-technology co-optimization for SRAM and emerging memories
13:00 - 14:00 Marie Garcia Bardon 
Advanced Logic Scaling: Technologies for the sub-2nm

Free Registration Online Workshop  
               https://u.uma.es/icc/workshop

Sep 26, 2026

[ChipFoundry] December Shuttle: Commitment deadline moved to November 4th

Sep 25, 2026

[paper] EKV compact modeling for oxide CTFTs

Mingyu Zhuang, Zhiyuan Wang, Baochuan Liu, Jiawei Zhang, Qian Xin, Aimin Song
Neural-network-assisted EKV compact modeling for complementary oxide thin-film transistors
Appl. Phys. Lett. 129, 123504 (2026)
DOI: 10.1063/5.0349365

1. Shandong Technology Center of Nanodevices and Integration, Uni. Shandong (CN)
2. Department of Electrical and Electronic Engineering, Uni. Manchester (UK)
3. Southern University of Science and Technology, Shenzhen (CN)

ABSTRACT: This work reports a neural-network-assisted Enz–Krummenacher–Vittoz (EKV) compact-modeling framework for complementary oxidethin-film transistors (TFTs). The neural network is used as a bias-dependent effective-parameter generator for the equivalent mobility and onset voltage, while the drain current is calculated by the analytical EKV current core. This strategy represents defect-, contact-, and bias-dependent nonidealities of oxide TFTs through effective quantities without replacing the current equation with a black-box neural-networkpredictor. The model is validated using both n-type indium–gallium–zinc oxide TFTs and p-type tin monoxide (SnO) TFTs, achieving mean absolute percentage errors of 0.56% and 0.36%, respectively. The learned effective parameters further provide an EKV-constrained compact representation of bias-dependent transport capability and channel-onset behavior obtained from global fitting of the measuredoutput-characteristic dataset, rather than serving as directly extracted material parameters. The trained model is translated into aPSpice-compatible library and applied to complementary inverter simulation, showing good agreement with measured voltage-transfer characteristics and reproducing the main transient response characteristics. These results demonstrate an accurate, analytically structured, and Simulation Program with Integrated Circuit Emphasis-compatible compact-modeling strategy that links bias-dependent oxide-TFTtransport to circuit-level simulation. 

FIG. (a) Equivalent parasitic‑capacitance and measurement‑loading network used in the transient simulation of the complementary SnO/IGZO inverter. (b) Simulated output waveforms for different values of the additional external capacitance.

Selected References:
[24] C. C. Enz, F. Krummenacher, and E. A. Vittoz, “An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low-current applications,” Analog Integr. Circuits Signal Process. 8, 83–114 (1995)
DOI: 10.1007/BF01239381
[25] J.-M. Sallese et al, “Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model,” Solid-State Electron. 47, 677–683 (2003) 
DOI: 10.1016/S0038-1101(02)00336-2
[26] W. Grabinski et al, “FOSS EKV 2.6 parameter extractor,” in Proceedings of the 22nd International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES) (IEEE, 2015), pp. 181–186
DOI: 10.1109/MIXDES.2015.7208507

Sep 23, 2026

[100FET] IEEE EDS Egypt Chapter

IEEE EDS Egypt Chapter - 100 Years FET

Theme: Overview and celebration of 100 years of FET research
Location: Zewail City of Science and Technology Campus; October Gardens; 6 of October City
Date: Sept. 27-28, 2026

Main Objectives:
This event celebrates the 100th anniversary of the Field-Effect Transistor (FET) by highlighting its evolution over the past century and exploring future trends in electron devices. It also promotes the activities and membership of the IEEE EDS Egypt Chapter. The event aims to:
  • Technical Advancement: Discuss recent developments in FET fabrication, modeling, simulation, and operation
  • Knowledge Exchange: Share insights on the historical evolution and future directions of FET technologies
  • Professional Networking: Foster collaboration among students, researchers, academics, and industry professionals
  • Skill Development: Provide hands-on TCAD workshops to enhance practical device simulation skills
  • Membership Growth: Increase the visibility of the IEEE EDS Egypt Chapter and encourage new memberships
Agenda
Time Activity Description
  Day 1 Sunday, 27th of September 2026
08:30 – 09:30 Registration Welcoming participants and distribution of materials
09:30 – 10:00 Welcome Speech Welcome speeches by the faculty leaders
10:00 – 11:00 Distinguished Lecturer #1
Dr. Hisham Omran
Focus on FET evolution
11:00 – 12:00 Networking Break Refreshments & snacks
12:00 – 13:00 Distinguished Professor #2 Focus on FET research trends
13:00 – 14:00 Women in Engineering Talk
Dr. Shereen Youssef
Talk by IEEE WIE Egypt Chair
14:00 – 15:00 Q&A Interactive Discussion Interactive discussion:
- Academia vs. Industry in FETs
  Day 2  Monday, 28th of September 2026
08:30 – 09:00 Registration Welcoming participants and distribution of materials
09:00 – 11:00 Workshop #1:
TCAD Modelling of FET Devices
Eng. Amr W. Shalaby
TCAD workshop #1:
- Introduction to the TCAD tool
- Simulation of a MOSFET
- Doping electrical characterization
11:00 – 12:00 Networking Break Refreshments
12:00 – 13:00 Workshop #2
Eng. Yasmine AbdulAal
Senior design engineer at Siemens
TCAD workshop #2
- Compact modelling for next-gen electronics 
13:00 – 13:30 Panel / Q&A TCAD in academia and industry
13:30 – 14:30 Closing Ceremony Certificates and giveaways