[1] Wang, Jie; Chen, Zhanfei; You, Shuzhen; Bakeroot, Benoit; Liu, Jun; Decoutere, Stefaan; "Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs" Micromachines (2021) 12, no. 2: 199; https://doi.org/10.3390/mi12020199
Abstract: We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.
Fig: The equivalent circuit of the capacitance of field plates (FPs) of a p-GaN gate HEMT.
[2] Chen, H. and He, L., The spatial and energy distribution of oxide trap responsible for 1/f noise in 4H-SiC MOSFETs. Journal of Physics Communications, JPCO-101816.R1 (2021)
Abstract: Low-frequency noise is one of the important characteristics of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) that is susceptible to oxide traps. Drain-source voltage noise models of 4H-SiC MOSFETs under low–drain-voltage and inverse condition were proposed by considering the spatial and energy non-uniform distribution of the oxide trap, based on the McWhoter model for uniform trap distribution. This study performed noise experiments on commercial 4H-SiC MOSFETs, and revealed that the non-uniform spatial and non-uniform energy distribution caused new 1/f noise phenomenon, different from that under uniform spatial and energy distribution. By combining experimental data and theoretical models, the spatial and energy distribution of oxide traps of these samples were determined.
Fig: Adaptive circuit for 4H-SiC MOSFET noise measurement
in the frequency 1 Hz-10kHz ranged
