Friday, February 28, 2020

#paper: M. Albrecht, F. J. Klüpfel and T. Erlbacher, "An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs," in IEEE TED, vol. 67, no. 3, pp. 855-862, March 2020 doi: 10.1109/TED.2020.2967507 https://t.co/8fJMfKM9SP https://t.co/nlRiSs1Qf0



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February 28, 2020 at 06:12PM
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Tuesday, February 25, 2020

#paper: Thomas, S. Guiding the design of #negative-#capacitance #FETs. Nat Electron 3, 72 (2020). https://t.co/clMVy6syW9 https://t.co/zh8N3ynGIx https://t.co/s3KFFkQ8lT


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February 25, 2020 at 02:57PM
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#Opensource licenses: What, which, and why https://t.co/kZlEUC5CQE https://t.co/G1WotNhQp8


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February 25, 2020 at 09:42AM
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Fwd: IEEE-EDS Santa Clara Valley/San Francisco Chapter March Seminar

We are pleased to announce our monthly seminar for March

Wide Bandgap Devices Enabling High Power and High Frequency Electronics

Speaker: Professor Srabanti Chowdhury, Stanford University

Friday, March 13, 2020 at 11:45AM – 1PM

Texas Instruments Conference Center
2900 Semiconductor Dr, Building E, Santa Clara, CA 95051
FREE PIZZA PROVIDED

Register Here: https://www.surveymonkey.com/r/R7VKQ3M

Abstract:
We live in extremely exciting times, often identified as the age of the fourth industrial revolution. With electrification at every level, we are witnessing the most significant transformation of transportation since the internal combustion engine. Renewable energy is now a reality. IoT with the ever-expanding need for sensors and low power electronics is changing our lives dramatically. Robotics and autonomous vehicles are upon us. Both new and existing applications are demanding physical electronics solutions with new materials, devices and heterogeneous integration to drive these innovations to their full potential.

Wide-bandgap (WBG) semiconductors present a pathway to enable much of these electronics with higher efficiency and newer functionalities. Semiconductor devices with higher power density have unprecedented value in both power and high frequency electronics. Reducing conversion losses is not only critical for minimizing consumption of limited resources, it simultaneously enables new compact and reduced weight solutions, the basis for a new industry offering increased power conversion performance at reduced system cost. Equally importantly, GaN has opened the door to other ultra-wide bandgap materials such as Diamond, Aluminum Nitride and Gallium Oxide.


More information at the IEEE EDS Santa Clara Valley-San Francisco Chapter Home Page

Subscribe or Invite your friends to sign up for our mailing list and get to hear about exciting electron-device relevant talks. We promise no spam and try to minimize email. You can unsubscribe easily.
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[mos-ak] [Final Program] 2nd Latin America MOS-AK Workshop at LAEDC

2nd Latin America MOS-AK Workshop at LAEDC
(co-located with LAEDC /LASCAS)
Escazu, Costa Rica, February 25, 2020

Today, Professor Benjamin Iniguez URV, DEEEA, Tarragona, (SP) on behalf of the Extended MOS-AK TPC Committee will open 2nd consecutive Latin America MOS-AK Workshop

Scheduled, 2nd consecutive Latin America MOS-AK Workshop co-located with LAEDC /LASCAS aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors.
 
The MOS-AK workshop program is available online:
<http://www.mos-ak.org/costa_rica_2020/>

Venue:
Escazu, west of San José, 
Costa Rica

Online Registration is still open
(any related enquiries can be sent to register@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication
in a special 
Solid State Electronics issue on compact modeling 

W.Grabinski on behalf of International MOS-AK Committee
WG25022020

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Monday, February 24, 2020

Is #opensource software licensing broken? https://t.co/VBw6rf0nyi https://t.co/ECoreNRJR1


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February 24, 2020 at 10:50AM
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Friday, February 21, 2020

#paper: R. Kotecha, G. Moreno, B. Mather and S. Narumanchi, "Modeling Needs for Power Semiconductor Devices and Power Electronics Systems," 2019 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2019, pp. 12.1.1-12.1.4. https://t.co/x6825AQzZ4 https://t.co/Cmrty3XJHJ


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February 21, 2020 at 02:41PM
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#paper: N. Chowdhury et al., "First Demonstration of a Self-Aligned #GaN p-FET," 2019 IEEE #IEDM, San Francisco, CA, USA, 2019, pp. 4.6.1-4.6.4. https://t.co/7u64T4nDe2 https://t.co/gOSilpZbW9


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February 21, 2020 at 02:40PM
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#paper: Z. Wu et al., "A physics-aware compact modeling framework for transistor aging in the entire bias space," 2019 IEEE IEDM, San Francisco, CA, USA, 2019, pp. 21.2.1-21.2.4. https://t.co/sF6okiUdAk https://t.co/bxo7NNAiiV


sEKV References:
[8] C Enz et al., SSCM, vol. 9, no. 3, 2017.
[9] A Mangla et al., MIXDES, 2011.


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February 21, 2020 at 11:47AM
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Moving To #GAA #FETs https://t.co/17yYwyMDHI #paper https://t.co/eqPWdfdvEv


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February 21, 2020 at 07:42AM
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Thursday, February 20, 2020

Open-Gate Silicon JFET: Silicon Junction Field Effect Transistors are fabricated at 3IT.Nano | CMC Microsystems https://t.co/9Ip4MTCiGM #paper https://t.co/9qTuAU1TQl


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February 20, 2020 at 05:16PM
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#DATE 2020: Bridging the gap between #semiconductor technologies and architecture #design https://t.co/J8ThuGc7Rv #paper https://t.co/UJQEYSofLG


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February 20, 2020 at 03:04PM
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Using Python and #GNU #Octave to #plot data https://t.co/DTpsqVydDd #modeling https://t.co/x6RBT3Q6K8


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February 20, 2020 at 01:18PM
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Wednesday, February 19, 2020

#paper: Liu, X., Gao, H., Ward, J.E. et al. Power generation from ambient humidity using protein nanowires. Nature (2020). https://t.co/1aOq5zyIIT Received: 19 November 2018 Accepted: 14 November 2019 Published: 17 February 2020 https://t.co/jr8305P63a https://t.co/9nbuIRTJ4u


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February 19, 2020 at 07:36AM
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Tuesday, February 18, 2020

#paper: J. L. Wang et al., "Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress," in IEEE Journal of the Electron Devices Society, vol. 8, pp. 145-151, 2020. doi: 10.1109/JEDS.2020.2971245 https://t.co/hP3ZZwd29B https://t.co/N2v6Si9TVN


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February 18, 2020 at 02:50PM
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33rd IEEE ICMTS, Edinburgh, Scotland.

IEEE 33rd International Conference on Microelectronic Test Structures
April 6-9, 2020, Edinburgh, Scotland

It is our great pleasure to invite you to the 33rd IEEE International Conference on Microelectronic Test Structure (ICMTS) which will be held April 6-9, 2020, in Edinburgh, Scotland.  
 
ICMTS is the leading measurement and characterisation conference for micro- and nano-fabrication processes including integrated circuits, photonics, and micro- and nano-system technologies.
 
Registration for the conference is now open at the conference website: http://www.icmts.net/conf_reg 
 
For advance prices please register for the conference before the 24th of February.  
 
ICMTS 2020
South Hall Complex
The University of Edinburgh
Pollock Halls, 18 Holyrood Park Road 
Edinburgh, EH16 5AR
Scotland, UK
 
 
Hotel booking information is also available:  http://www.icmts.net/hotel_reg  
 
Tutorials: April 6, 2020
Conference: April 7 - 9, 2020
 
Please contact the conference organisers at icmts@ed.ac.uk for more information.
 
Find the ICMTS group on LinkedIn https://www.linkedin.com/groups/3804498/ 
Follow us on Twitter at https://twitter.com/IEEE_ICMTS 

The Role of #OpenSource Software in #Engineering Education https://t.co/8lcKmG8D4K https://t.co/6gpwMFb2iP


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February 18, 2020 at 12:26PM
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Call 2020: EMBRAPII and Innosuisse are conducting a joint call for the first time. The call is open to innovations in all R&D topics. https://t.co/njR2Gun9Fm #paper https://t.co/6TuwTtXd92


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February 18, 2020 at 12:40PM
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Monday, February 17, 2020

The Future of Nanoelectronics Devices and Systems Beyond Moore Workshop March 30,2020 SiNANO https://t.co/nDbTR1WMgy #paper https://t.co/cBFO5FKXhM


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February 17, 2020 at 08:15PM
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Friday, February 14, 2020

#paper: S. Shen and J. Yuan, "1/ f^gamma Low Frequency Noise Model for Buried Channel MOSFET," in IEEE JEDS, vol. 8, pp. 126-133, 2020 doi: 10.1109/JEDS.2020.2967897 https://t.co/AkE3oMF8lI https://t.co/W750HJoXWL


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February 14, 2020 at 03:05PM
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Industrial Placement Sponsorships Available From #IEEE Electronic Devices Society #EDS https://t.co/icADeNBazu #paper https://t.co/n0iAfQAD1q


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February 14, 2020 at 11:20AM
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I ❤️ Free Software - Valentine's Day 2020 FSFE https://t.co/bXAlq7cDmN #paper https://t.co/HdPLWXripO


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February 14, 2020 at 09:01AM
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Postdoc in Millimeter-Wave Nano-Scale CMOS Circuits for Quantum Computing; Vacancy at Department of EE and Computer Engineering, Aarhus University Deadline 15 Feb; Fixed term full-time position: 1 Apr 2020 - 31 Mar 2022 [ID: 2624] https://t.co/WzYvgHWbsL #paper https://t.co/tLZvSd5Ktn

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February 14, 2020 at 07:12AM
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Tuesday, February 11, 2020

#paper: K. Li and S. Rakheja, “Modeling and Simulation of Quasi-Ballistic III-Nitride Transistors for RF and Digital Applications,” Int. J. Hi. Spe. Ele. Syst., vol. 28, no. 01n02, p. 1940011, Mar. 2019 doi: 10.1142/S0129156419400111 https://t.co/k3Rf5UGe8w https://t.co/SrmUC66YDz


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February 11, 2020 at 02:55PM
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#paper: B. Liu et al., "A Fully-Synthesizable Fractional-N Injection-Locked PLL for Digital Clocking with Triangle/Sawtooth Spread-Spectrum Modulation Capability in 5nm CMOS," in IEEE SSC Letters, vol. 3, pp. 34-37, 2020 doi: 10.1109/LSSC.2020.2967744 https://t.co/7YkX9vwaJ6 https://t.co/KO0oTZDHBV


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February 11, 2020 at 10:25AM
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ITE Piaseczno Branch, the only one Polish experimental technological line for #silicon #devices




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February 11, 2020 at 07:17AM
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Monday, February 10, 2020

#paper: W. E. Muhea, G. U. Castillo, H. C. Ordoñez, T. Gneiting, G. Ghibaudo and B. Iñiguez, "Parameter Extraction and Compact modeling of 1/f noise for amorphous ESL IGZO TFTs," in IEEE JEDS. doi: 10.1109/JEDS.2020.2970177 https://t.co/kDjMe1zkI1 https://t.co/eiCLzkBAJP


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February 10, 2020 at 02:17PM
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MIXDES deadline for regular paper submission is Feb. 29, 2020 This year the 27th International Conference "Mixed Design of Integrated Circuits and Systems", MIXDES 2020 will take place on June 25-27, 2020 in Wrocław (PL) https://t.co/yaP3bDfZE4 #paper https://t.co/XiMaf9zxmL


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February 10, 2020 at 12:46PM
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#paper: Nikolaos Mavredakis et al.; Low-frequency noise parameter extraction method for single layer graphene FETs; arXiv:2002.01666 [physics.app-ph] https://t.co/TApAeAaJGi https://t.co/KCBD4AqTau


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February 10, 2020 at 10:32AM
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IEEE International Conference on Flexible and Printable Sensors and Systems #FLEPS June 28 - July 1, 2020 | Hilton Deansgate Manchester, UK https://t.co/7ZEix4QohM #paper https://t.co/Q8JVPRXfZa


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February 10, 2020 at 10:08AM
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#paper: A. Beckers, F. Jazaeri and C. Enz, "Inflection Phenomenon in Cryogenic MOSFET Behavior," in IEEE TED doi: 10.1109/TED.2020.2965475 https://t.co/pfaA3A4hNh https://t.co/o0UnxXcu90


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February 10, 2020 at 09:58AM
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Friday, February 7, 2020

#paper: Boran Wang, Ao Zhang, Yixin Zhang, Jianjun Gao; An approach for determining thermal resistance model parameters of SiGe HBT; IJNM, First published:20 May 2019 https://t.co/HpoAjc5Lhl https://t.co/KVfAx5nVGm


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February 07, 2020 at 08:14PM
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#paper: S. Hou, M. Shakir, P. Hellström, B. G. Malm, C. Zetterling and M. Östling, "A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C," in IEEE EDS Journal, vol. 8, pp. 116-121, 2020. doi: 10.1109/JEDS.2020.2966680 https://t.co/iGWEwYIxEb https://t.co/RAjaJj5zXJ


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February 07, 2020 at 05:11PM
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#paper: Zhongjie Ren and Yuan Taur; Non-GCA Modeling of Near Threshold I-V Characteristics of DG MOSFETs Available online 1 February 2020 In Press, SSE Journal Pre-proof https://t.co/jnt2d48q5J https://t.co/9hJayW79si


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February 07, 2020 at 04:33PM
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Thursday, February 6, 2020

Heterogeneous Integration Roadmap #HIR: 3rd Annual Meeting – SCV Chapter, IEEE CPMT Society https://t.co/Hvqrz3J1o5 #paper https://t.co/Jbi32n8iOW


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February 06, 2020 at 01:16PM
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#paper: S. A. Albahrani et al., "Extreme Temperature Modeling of AlGaN/GaN HEMTs," in IEEE Transactions on Electron Devices, vol. 67, no. 2, pp. 430-437, Feb. 2020. doi: 10.1109/TED.2019.2960573 https://t.co/S6BSXBDxqn https://t.co/r2eBzzWvZS


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February 06, 2020 at 12:43PM
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The Fourth Terminal









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February 06, 2020 at 10:43AM
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