May 2026 Event "ISHI Kai 3rd Anniversary Event

May 2026 Event ISHI Kai 3rd Anniversary Event 

Gift to Students, Newcomers, and Semiconductor Beginners!

Tokyo Venue

Contents

The ISHI Association has finally celebrated its third anniversary!
This time, we have collected content for students, newcomers, and semiconductor beginners. What should university teachers and those who have done open source semiconductors do to step up for students and newcomers? And what means are there? This time, there are also on-site participation slots in Tokyo and Fukuoka, so please join us. This is only available for applications for the Tokyo venue.

Click here to apply for the Fukuoka venue >> https://ishikai.connpass.com/event/381975/

The activity is done on Discord. We hope you will join us!
(If it is disabled, please contact Noritsuna Atmark ishi-kai.org) 
https://discord.gg/Sj47dJk8x7

Participation fee >> Free

[papers] Charge-Based MOSFET Compact Models with ACM-2

IEEE 17th Latin America Symposium on Circuits and System 

LASCAS, Arequipa, Peru

24-27 February 2026

[1] R. Fiorelli, M. Miguez and J. Núñez, "Exploring Charge-Based Mosfet Compact Models with ACM-2 as a Design-Oriented Paradigm," 2026 IEEE 17th Latin America Symposium on Circuits and System (LASCAS), Arequipa, Peru, 2026, pp. 1-5, doi: 10.1109/LASCAS67804.2026.11457086.

Abstract: Charge-based MOSFET compact models provide a physically consistent framework to describe transistor charges and capacitances across operating regimes. Unlike current-based approaches, they enforce charge conservation and yield reliable predictions of dynamic and RF behavior. This paper reviews the main charge-based formulations, ranging from industrial standards (BSIM, PSP, HiSIM) to academic compact models such as EKV and the recent ACM-2 five-parameter approach. We contrast their philosophies, complexity, and accuracy, highlighting the trade-offs between highly parameterized industrial models and compact analytical formulations oriented to design and education. Representative applications in analog/RF design, digital timing and power estimation are discussed. Particular attention is given to the lightweight ACM-2 model as a paradigmatic example of simplicity and analytical clarity. We conclude by outlining current challenges-advanced device architectures, quantum effects, and automated parameter extraction-and perspectives for future compact modeling in deeply scaled technologies.

[2] C. A. Dobrin, D. G. A. Neto, D. Gaidioz, P. Cathelin, S. Bourdel and M. J. Barragan, "RF Design-Oriented ACM Model Generation Using Parametric Test and Machine Learning Regression in 28nm FD-SOI CMOS Technology," 2026 IEEE 17th Latin America Symposium on Circuits and System (LASCAS), Arequipa, Peru, 2026, pp. 1-5, doi: 10.1109/LASCAS67804.2026.11457152.

Abstract: This paper presents a methodology for extracting design-oriented MOS transistor models from wafer-level parametric test (PT) data, enabling accurate post-fabrication circuit characterization that inherently accounts for process variability. Leveraging an advanced compact MOSFET (ACM) model, the approach employs a neural network regressor to predict critical RF transistor parameters, including DC characteristics, parasitic capacitances, and excess noise factor, from standard PT measurements routinely collected during production. The regressed parameters are gathered into a Verilog-A component that faithfully represents the electrical behavior of fabricated transistors, facilitating variability-aware simulation and performance analysis of RF integrated circuits without requiring additional test structures or any measurement overhead. Validation on 28 nm FD-SOI technology shows high prediction accuracy for NMOS devices, confirming the effectiveness of the methodology as a tool for supporting post-fabrication circuit simulations and process variability management.

[3] D. G. A. Neto, M. C. Schneider, M. J. Barragan, S. Bourdel and C. Galup-Montoro, "Benchmarking the Symmetry of MOSFET Compact Models with Emphasis on ACM2," 2026 IEEE 17th Latin America Symposium on Circuits and System (LASCAS), Arequipa, Peru, 2026, pp. 1-5, doi: 10.1109/LASCAS67804.2026.11457119.

Abstract: The symmetrically built MOS transistors of integrated circuits exhibit symmetric electrical behavior if the source and drain terminals are interchanged. Additionally, a series association of transistors is electrically “equivalent” to a single transistor. However, some of the compact MOSFET models do not comply with the requirements of symmetry and transistor equivalence. This paper reports tests of symmetry and of series association of transistors of some compact models available in circuit simulators. We show that the ACM2, a chargebased model in which the terminal voltages are referred to the substrate, is fully compliant with the transistor symmetry, but that some popular models are not. To test the symmetry property, we show examples of transistor current-voltage characteristics and derivatives up to the fifth order, and capacitance-voltage characteristics, all tests around  VDS=0 . A MOSFET binary current divider is employed to test the consistency of the model applied to a series association of transistors.

[paper] ATMAD: Compact Modeling with Parameter Extraction

Yuhang Zhang, Qing Zhang, Yang Shen, Bingyi Ye, Xiaojin Li, Yabin Sun, Yanling Shi, Yong‑Fu Li

ATMAD: Agile Transistor Compact Modeling with Parameter Extraction 

Based on Automatic Differentiation

ACM 1084-4309/2026/04-ART103

DOI: 10.1145/3797484

1. School of Integrated Circuits, East China Normal University, Shanghai, China
2. Department of Micro‑Nano Electronics, Shanghai Jiao Tong University, Shanghai, China
3. East China Normal University, Shanghai, China
4. Shanghai Jiao Tong University, Shanghai, China

Abstract: Compact models of transistors are essential for simulating and optimizing circuits with the use of SPICE simulation tool. Parameter extraction, which is calibrating these models, is essential to ensure their alignment with measured or simulated data. However, conventional parameter extraction methods are generally iterative and experience-dependent, requiring significant time and effort from modeling engineers. Moreover, as semiconductor devices and compact models become increasingly advanced, the need for a tailored extraction process for each model has become increasingly inefficient. To address the above challenges, this work proposes an agile transistor compact modeling framework, ATMAD. The proposed framework takes a compact model file and a set of electrical characteristic data as inputs, producing a calibrated model with minimal human intervention. ATMAD automatically retrieves the equations in the compact model and converts them into computational flow graphs, thus supporting different compact models with a generalized process. A graph unlooping technique is proposed to support automatic differentiation for compact models with implicit functions (e.g., series resistance and surface potential solving). Based on the computational flow graph, ATMAD adopts automatic differentiation technique to achieve automatic and parallel optimization of model parameters. The proposed ATMAD framework is validated on commonly-used compact models in academia and industry, showing its effectiveness for compact modeling for both 𝐼𝑉 and 𝐶𝑉 characteristics.

Fig. The overall flow of ATMAD framework

Acknowledgements: This work is supported in part by the Shanghai Explorer Program under Grant No. 25TS1410300 and 24TS1400200 and in part by the National Natural Science Foundation of China under Grants No. 62304133 and 62350610271.

[paper] CrOx/TiOy Memristive Devices

Phu-Quan Pham1,2, Ngoc-Lam Le Pham3,4, Thuy-Anh Tran1,2, Van-Son Dang4, Quang Nguyen2,5, Ngoc Kim Pham1,2, Thuat Tran Nguyen3,4

On-Pinched Hysteresis in CrOx/TiOy-based Memristive Devices: Modeling and Analysis

Appl. Phys. Lett. 128, 153502 (2026)

DOI: 10.1063/5.0332014

1 Faculty of Materials Science and Technology, University of Science, Vietnam National University – Ho Chi Minh City, Ho Chi Minh City, 72754, Vietnam
2 Vietnam National University – Ho Chi Minh City, Ho Chi Minh City, 71309, Vietnam
3 Semiconductor and Advanced Materials Institute, Technology and Innovation Park, Vietnam National University – Hanoi, Hoa Lac, Hanoi, 13151, Vietnam.
4 Faculty of Physics, University of Science, Vietnam National University – Hanoi, 334 Nguyen Trai, Thanh Xuan, Hanoi, 11406, Vietnam
5 Department of Physics, International University, Vietnam National University – Ho Chi Minh City, Ho Chi Minh City, 71309, Vietnam

Abstract: Transition-metal oxide memristors are promising for neuromorphic computing, yet most SPICE models overlook material-specific effects such as oxygen stoichiometry and non-pinched hysteresis. Here, we systematically study CrOx/TiOy memristors fabricated under controlled oxygen concentrations (10%–50%) and propose an improved SPICE-compatible model. The devices exhibit oxygen-dependent resistive switching, retention, and pulse-driven plasticity, with optimal performance at 40% oxygen. Our model explicitly reproduces the non-pinched hysteresis observed in I–V curves, consistent with behaviors such as ion immigration, charge trapping, and remnant polarization, and achieves close agreement with experiments across multiple stoichiometries. Validation includes endurance, retention, and synaptic functions such as long-term potentiation/depression and spike-number/amplitude-dependent plasticity. Finally, the model is extended from single devices to a 4 × 4 crossbar array, demonstrating its scalability for artificial neural network simulations. These results emphasize the critical role of oxygen stoichiometry in CrOx/TiOy memristors and introduce a modeling framework that bridges experimental device physics with circuit-level neuromorphic applications.

Fig. a. Fabricated single cell memristor devic and b. 4×4 crossbar array

[paper] Thermal Management SiGe HBT in ICs

Boulgheb, Abdelaaziz

"Enhanced thermal management of SiGe HBT integrated circuits 

using the Peltier effect and DBC metal tracks"

Microelectronics Reliability 174 (2025): 115896

DOI: 10.1016/j.microrel.2025.115896

1 Department of Electronics, University of Sciences and Technology Houari Boumediene, Bab Ezzouar 16111, Algeria.
2 Hyperfrequencies and Semiconductors Laboratory, Department of Electronics, Faculty of Sciences and Technology, University of Frères Mentouri Constantine 1, PO Box 25017, Constantine, Algeria.

Abstract: Effective thermal management remains a major challenge for SiGe heterojunction bipolar transistor (HBT) integrated circuits, particularly in BiCMOS9MW 0.13µm technology. This study proposes a novel two-stage heat dissipation strategy that combines active thermoelectric cooling with passive DBC-based conduction an approach not previously explored in this context to address this issue. First, the Peltier effect is leveraged in combination with conventional plastic packaging to regulate circuit thermal performance. Second, Direct Bonded Copper (DBC) metal tracks are implemented to establish an efficient thermal pathway between the internal circuit and external heat sinks. Experimental results indicate that standard plastic packaging alone results in excessive heating (Tmax = 467 K). The incorporation of the Peltier effect significantly reduces the peak temperature to 380 K, while the addition of DBC tracks further enhances cooling, lowering the temperature to 340 K. Unlike traditional cooling solutions that rely solely on packaging or external heatsinks, our method enables localized, controllable heat extraction directly at the chip level, ensuring better thermal regulation and improved electrical performance. This dual approach not only mitigates self-heating but also leads to notable improvements in DC and RF performance. Specifically, the maximum current gain (βmax) increases from 1913 to 2183, and the transit frequency (ft) rises from 265 GHz to 285.6 GHz. These findings underscore the effectiveness of the combined Peltier-based cooling and DBC thermal management in enabling next-generation high-frequency applications.

Fig. a) SiGe HBT device structure simulated with COMSOL, showing the log of electron and hole concentrations. b) SEM cross-sectional view of the SiGe HBT.

Lin Fujian Optoelectronic Device Modeling Laboratory

Yangtze River Delta Integrated Circuit Industrial Application Technology Innovation Center

Jiangsu Jicui Integrated Circuit Application Technology Innovation Center

Lin Fujian Optoelectronic Device Modeling Laboratory

Optoelectronic Device Modeling Laboratory Services

• SPICE model development, characterization, and parameter extraction for silicon photonic waveguides and micro modulators and optical splitters/combiners
• Compact modeling, characterization, and parameter extraction for other advanced photonic devices
• GaN device characterization, EEHemt, ASM model and Angelov models
• InP‑HEMT device characterization, EEHemt model
• SiGe HBT device characterization, SPG/VBIC/HICUM model
• Characterization of micro‑/nano‑devices, internal/external parameter consistency studies, and high‑quality enhancement of existing models
• Ultra‑wideband SPICE models for electrical interconnects, packaging, and passive components
• Modeling of 1/f noise, noise parameters, avalanche effects, self‑heating, channel temperature, and related physical effects
• CNAS‑certified testing and final acceptance testing for major projects
• Other practical modeling services based on customer requirements

Laboratory Contact Information

联系人：小葛，18334212431，邮箱：gemy@jitric.cn

地址：无锡市锡山区凤威路与春江东路交叉口，长三角工业芯谷 A 栋 4 楼

定位：轻资产、高专业、全流程建模验证平台

合作模式：仪器有偿使用、可靠提参、技术赋能

[MEAD] Low-Power Analog IC Design

MEAD Education

June 22-26, 2026

Registration deadline: May 22, 2026

Payment deadline: June 12, 2026

MONDAY, June 22
8:30-12:00 am	MOS Transistor Modeling for Low-Voltage and Low-Power Circuit Design	Christian Enz
1:30-5:00 pm	Design of Low-Power Analog Circuits using the Inversion Coefficient	Christian Enz
TUESDAY, June 23
8:30-10:00 am	Noise Performance of Elementary Circuits	Boris Murmann
10:30-12:00 am	Noise Performance of Filters, Feedback & SC Circuits	Boris Murmann
1:30-3:00 pm	Opamp Topologies and Design: Single-Stage Circuits	Boris Murmann
3:30-5:00 pm	Opamp Topologies: Cascoded and Two-Stage Circuits	Boris Murmann

[Read more and REGISTER]

[OpenSUSI] Kicks off Five-Year Plan

Industry-Academia Collaboration Project Launches for Real Chip Manufacturing 

Using NDA-Free PDK - Tokai Rika, Kyushu University, AIST Solutions, 

OpenSUSI Kicks Off Five-Year Plan for FY2026

Tokai Rika Co., Ltd., Kyushu University, AIST Solutions Co., Ltd., and OpenSUSI have announced a joint project on a five-year plan to develop semiconductor human resources and verify their implementation through industry-academia collaboration to actually manufacture chips using PDK (Process Design Kit) that does not rely on NDAs (non-disclosure agreements). The 2026 launch ceremony was held. The biggest feature of this project is that it allows students to experience a series of processes from design to chip manufacturing under an open design environment using NDA-free PDKs #OpenPDKs

Positioning and future development in FY2026 as the first year that this project will be fully developed over a five-year span. Based on an open design and manufacturing environment utilizing NDA-free PDK #OpenPDK, we will continue and develop the following initiatives:

• Continuation and advancement of hands-on semiconductor human resource development
• Providing opportunities for actual chip manufacturing and verification using NDA-free PDK
• Building a practical and highly reproducible education and implementation model through industry-academia integration
• In exchange for the cost support for this program, we will embed the company's logo on the prototype chip to spread awareness of semiconductor design human resource development as a social contribution activity

(From left) Junichi Okamura, Representative Director of OpenSUSI, 

Haruichi Kanaya, Professor of Kyushu University, 

Taketoshi Sakurai, Executive Officer of Tokai Rika, 

and Seiji Osaka, President and CEO of AIST Solutions

If you are interested or interested in this matter, please contact us at:

OpenSUSI Secretariat <secretary@opensusi.org>

 

[papers] Compact/SPICE Modeling

Sun, Jing, Daquan Liu, Hang Li, Wensheng Qian, Jiye Yang, Yabin Sun, Bingyi Ye, Yuhang Zhang, Yang Shen, and Xiaojin Li. "A physics-based and accurate STI-LDMOS compact subcircuit model with modified drift region resistance and gate-drain capacitance." 

Semiconductor Science and Technology (2026).

Abstract: This paper develops a physics-based and accurate shallow trench isolation lateral double-diffused MOS (STI-LDMOS) compact subcircuit model. In the proposed direct-current (DC) model, the drift-region resistances beneath both the STI region and the drain electrode are incorporated, thereby significantly improving its physical fidelity and predictive accuracy of the DC characteristics. For the proposed alternating-current model, the gate–drain capacitance model is decomposed into two components: a gate–drift-region overlap charge model with modified bias dependence derived from BSIM4.5, and a parallel-plate capacitance model for the gate–STI overlap region. In addition, the gate–source capacitance and drain–source charge models are further extended to match the physical structure and to more accurately capture the dynamic characteristics of an STI-LDMOS device. The model parameters are extracted and calibrated, and the proposed subcircuit model is implemented in Verilog-A. Excellent agreement is achieved between the proposed model and both the technology computer-aided design (TCAD) simulation results and the measured data from a 40 V STI-LDMOS device, demonstrating its accuracy and efficiency for circuit-level simulation of STI-LDMOS devices.

Nakos, Miltiadis Κ., Theodoros Α. Oproglidis, Dimitrios Η. Tassis, Constantinos Τ. Angelis, Charalabos Α. Dimitriadis, and Andreas Tsormpatzoglou. "Symmetric physics-based compact core model for double-gate junctionless transistors with ungated extensions." (2026).

Abstract: This work presents a physics-based compact model for double-gate junctionless field-effect transistors, with emphasis on accurately capturing the impact of ungated source/drain extensions on the drain current characteristics. The model is validated against two-dimensional device simulations performed using Silvaco ATLAS for two channel doping concentrations and a wide range of ungated extension lengths. To isolate the contribution of the access regions and clarify the effective channel length, all mobility degradation models were disabled in the simulations, allowing the observed current degradation to be attributed solely to the series resistance of the ungated extensions. The proposed formulation includes an analytical factor ξ that accounts for the reduced electrostatic influence of the source and drain terminals on the channel potential, as well as a closed-form expression for the fringe capacitance associated with the ungated regions. The resulting drain current model demonstrates very good agreement with numerical simulations across different geometries and doping levels. Model symmetry is further verified through a Gummel symmetry test, confirming the physical consistency of the formulation. Owing to its analytical nature and physical transparency, the proposed model is well suited to serve as a core building block for higher-level compact models of JL devices.

Y. Liu, L. Tian, Y. Niu, Y. Xia and W. Chen, "A SPICE-Compatible High-Efficiency Equivalent Mechanical Circuit Method for Electro-Thermal-Mechanical Coupling Simulation," in IEEE Transactions on Electron Devices

doi: 10.1109/TED.2026.3671249.

Abstract: Accurate and efficient modeling and simulation of electro-thermal-mechanical field coupling is essential for evaluating multiphysics effects on devices/circuits’ performance and reliability, as the multiphysics coupling effects become severe in advanced integrated circuits. In our previous work, we developed the equivalent mechanical circuit (EMC) method, thereby constructing a SPICE-compatible equivalent multiphysics circuit framework to simulate electro-thermal-mechanical coupling processes in advanced integrated circuits. However, the computational efficiency of the previous EMC (pEMC) method remains limited compared with the finite element method (FEM), since the pEMC method requires multiple iterations to simulate thermal expansion, even in linear equation systems. In this article, we develop a novel EMC method by proposing voltage-controlled current sources (VCCSs) into the pEMC. Therefore, the novel EMC method can simulate thermal expansion without iteration in linear equation systems. The results demonstrate that the computational efficiency of the novel EMC method achieves a tenfold improvement compared to the pEMC method and exhibits computational efficiency comparable to the FEM under the same number of nodes.

F. Yu et al., "Precise Surface Potential Modeling for Compact DC Models of a-IGZO Thin Film Transistors," in IEEE Transactions on Electron Devices, 

doi: 10.1109/TED.2026.3671772.

Abstract: Many thin film transistor (TFT) models that consider the free and trapped charges, including models for amorphous InGaZnO (a-IGZO) TFTs, rely on the accurate determination of surface potential. In this work, a physically-based initial solution and fast-converging iterative procedure with logarithmic increment are utilized for the precise determination of the surface potential model in TFTs with channels of noncrystalline semiconductors, which have exponentially distributed tails and deep traps in the semiconductors. In particular, the surface potential model does not use special functions, such as the Lambert W function. The precision of the proposed scheme of analytical model and iterative procedure is verified against reference simulations of surface potential, and against measured current–voltage DC characteristics of a-IGZO TFTs, employing a well-established surface-potential-based charge sheet model. The precision of the iterative procedure is in the range of few nV, converging approximately for less than half of the number of iterations of other schemes for the calculation of the surface potential. Accordingly, the proposed analytical model for surface potential and the iterative scheme for the determination of the values of the surface potential are suitable for implementation in TFTs’ circuit simulators.

K. Ohmori and S. Amakawa, "Variable-Temperature Broadband Noise Characterization of MOSFETs for Cryogenic Electronics: From Room Temperature down to 3 K," 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), Seoul, Korea, Republic of, 2023, pp. 1-3, 

doi: 10.1109/EDTM55494.2023.10103124.

Abstract: A broadband noise measurement system is newly developed and demonstrated at temperatures between 3 K and 300 K. Using the system, wideband noise spectroscopy (WBNS) from 20 kHz to 500 MHz is carried out for the first time, revealing that shot noise is the dominant white noise down to 3 K. The paper also suggests, by means of WBNS, the possibility of extracting the baseline noise characteristics, which do not include the noise component that varies a great deal from device to device.

Jeong, Junhwa, Ilho Myeong, and Ickhyun Song. "Impact of MOSFET source/drain resistance on channel thermal noise calculation and noise performance." 

Results in Physics (2026): 108634.

Abstract: For sub-micron metal oxide semiconductor field effect transistors (MOSFETs), parasitic series source/drain resistance has a significant impact on channel thermal noise (Sid) and noise parameters. In this work, we propose an improved analytical channel thermal noise model considering parasitic resistance, based on physical thermal noise models of sub-micron intrinsic MOSFETs. To validate the proposed model, measurements were performed at room temperature (25°C) on nMOSFETs fabricated in a commercial 130-nm (0.13-µm) bulk RF CMOS technology. All RF S-parameter and noise measurements were conducted on-wafer at room temperature, with open/short de-embedding applied to accurately remove pads and interconnect parasitics. The model was calibrated by extracting parameters in a spice with the standard BSIM4 model as a baseline and validated against measured data such as Sid, Rn, NFmin, Gopt, and Bopt. Furthermore, the proposed model is extended to a circuit-level analysis by deriving the noise figure of a high-frequency amplifier (HFA) using Cadence Virtuoso (Spectre). A good agreement between the measurement and the developed model is observed, particularly under high gate bias (Vgs) conditions where the potential drop at the parasitic resistance becomes apparent. The analysis demonstrates that accurate modeling of parasitic resistance is essential for predicting the accurate noise figure of the HFA in high-current regimes. The improved model predicts the thermal noise of both the extrinsic MOS device and the HFA circuit well, thereby supporting accurate noise simulations for high-frequency circuits that operate under a wide range of gate bias conditions.

Fig. (a) 3D image of LDD MOSFET (b) equivalent circuits of (a) where

Rlds + Rss = RS and Rldd + Rdd = RD (c) equivalent circuit of intrinsic MOSFET.

[DATE2026] Open Source Related Talks

DATE 2026 Verona, Italy

Open Source Related Talks

Monday, 20 April - Wednesday, 22 April 2026

<https://date26.date-conference.com/programme>

Label	Title	Authors
TS02.8	ML-DSA-OSH: An Efficient, Open-Source Hardware Implementation of ML-DSA	Quinten Norga; Suparna Kundu; Ingrid Verbauwhede
LK03	Democratizing Silicon: The Rise of Open-Source EDA and Europe’s Strategic Roadmap	Luca Benini
TS10.1	PICOSNN: Partially Incoherent Configurable Optical Computing Architecture for SNN Acceleration	Bowen Duan; Zhenhua Zhu; Zhengyang Duan; Huazhong Yang; Yuan Xie; Yu Wang
TS16.1	Non-Volatile Spintronic Flip-Flops with Checkpoint Preservation Supported in RISC-V Platform	Jiongzhe Su; Mingtao Chen; Zhanpeng Qiu; Bo Liu; Hao Cai
LBR01.4	Float Fight - Verifying Floating-Point Behavior In Risc-V Simulators	Katharina Ruep, Manfred Schlaegl and Daniel Grosse
LBR01.7	Hybrid Virtual Platform + FPGA Co-Emulation Framework	Lorenzo Ruotolo; Giovanni Pollo; Mohamed Amine Hamdi; Matteo Risso; Yukai Chen; Enrico Macii; Massimo Poncino; Sara Vinco; Alessio Burrello; Daniele Jahier Pagliari
TS20.1	Fault-Tolerance Mapping of Spiking Neural Networks to RRAM-Based Neuromorphic Hardware	Yuqing Xiong; Chao Xiao; Zhijie Yang; Lei Wang; Mengying Zhao
TS21.4	Substrate: A Statically Typed Framework for Designing Highly Configurable Analog and Mixed-Signal Circuit Generators	Rahul Kumar; Rohan Kumar; Borivoje Nikolic
SD03	Open-Source Hardware Landscape
SD03.1	Open Silicon Fabrication – Made in Europe	Gerhard Kahmen, IHP GmbH, DE
SD03.2	From Schematic To Silicon: Mixed Signal Ic Design In Open Source Flows	Harald Pretl, JKU Linz, AT
SD03.3	Bringing Software Design Thinking To Chip Design	Tomi Rantakari, ChipFlow, GB

[paper] Memristors SPICE Compact Modeling

Thomas Günkel1,2, Aleix Barrera1, Lluís Balcells1, Narcís Mestres1, 

Enrique Miranda2, Anna Palau1, Jordi Suñé2

SPICE-Compatible Compact Modeling of Cuprate-Based Memristors Across

a Wide Temperature Range 

Advanced Electronic Materials (2026): e00861

DOI: https://doi.org/10.1002/aelm.202500861

1 Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Bellaterra (SP)
2 Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona (SP)

ABSTRACT: Cryogenic memristors based on the high-temperature superconductor YBa2 CuO7−δ offer significant potential as nonvolatile memory elements or unit cell for analog artificial neural networks for future applications such as control units for quantum processors, cryogenic data centers or space-related electronics. In this work, the experimental switching capabilities of cuprate-based memristors are analyzed in terms of the material-specific physics. This work investigates the experimental switching behavior of cuprate-based memristors across temperatures from cryogenic to room temperature. The underlying interpretation, namely the trapping of injected charge carriers at a metal interface and field-induced detrapping, is incorporated into a physically inspired compact model. The core equations of this model consist of a differential balance equation and a current equation, which is derived from space-charge limited conduction. Comparison with experimental data shows that the model successfully reproduces the key features of the measured switching behavior across a wide temperature range, spanning from 80 to 300 K. Additionally, we implement the model in SPICE, enabling circuit-level simulations. The resulting compact model provides a useful framework for guiding experimental studies, capturing key features of the switching behavior, and bridging the gap between device-levelcharacterization and circuit-level design.

FIG: LTspice Simulations: (a) Implementation of the compact model into a LTspice schematic. The diagram is explained in more detail in the main text. Simulation results of the hysteron V(r) and the 𝐼𝑉 -characteristics abs(I(B2)) depending on the input signal V(v) are given for a simple sinusoidal input signal in (b) and a damped waveform in (c).

 

Acknowledgments: The authors acknowledge financial support from the Spanish Ministry of Science and Innovation MCIN/ AEI /10.13039/501100011033/ through CHIST-ERA PCI2021-122028-2A co-financed by the European Union Next Generation EU/PRTR, the “Severo Ochoa” Programme for Centres of Excellence CEX2023-001263-S, HTSUPERFUN PID2021-124680OB-I00,and HTS-4ICT PID2024-156025OB-I00, co-financed by ERDF A way of making Europe. The Spanish Nanolito networking project (RED2022-134096-T). The European COST Action SUPERQUMAP (CA 21144). EMand JS would like to thank the support the Spanish Ministerio deCiencia e Innovación (MCIN) / Agencia Española de investigación (AEI)10.13039/501100011 033 (Under project No. PID2022-139586NB-C41). TG acknowledge support from AGAUR Catalan Government Predoctoral Fellowship (2022 FISDU 00115). J.S. and E. M. acknowledge the support of the EU through the HORIZON Chips-JU 101194172 NeAIxt Project and the Agencia Española de Investigación (AEI)/10.13039/501100011033 under Project PCI2025-163216. The authors acknowledge the Scientific Servicesat ICMAB and the UAB PhD program in Materials Science.