Mar 24, 2018

Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors by F. Jazaeri and J.-M. Sallese #paper

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March 24, 2018 at 04:06PM

#paper: " #Circuit #aging has become a real reliability concern, because it leads to an increase in transistor threshold voltage that may cause timing errors as a result of higher delays in critical paths”

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March 24, 2018 at 02:21PM

#AR2 6 axis #robot is an #opensource platform

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March 24, 2018 at 01:31PM

Anomalous #CV Inversion in #TSVs: The Problem and Its #Cure #paper

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March 24, 2018 at 11:25AM

Mar 22, 2018

[mos-ak] [press note] Spring'18 MOS-AK Workshop in Munich on March 13, 2018

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
Spring'18 MOS-AK Workshop
Munich, March 13, 2018

The MOS-AK Compact Modeling Association, a global compact/SPICE modeling and Verilog-A standardization forum, held its Spring compact/SPICE workshop in Munich. The event was hosted on March 13, 2018, by Infineon Technologies AG in Neubiberg. The technical program of the event was coordination by Klaus-Willi Pieper, Infineon, and the MOS-AK TPC Committee. The workshop has received full industrial sponsorship by Infineon Technologies AG (lead sponsor) with technical program promotion provided by ASCENT NetworkKeysight TechnologiesIJHSES as well as NEEDS of

The MOS-AK workshop was opened by Klaus-Willi Pieper, Principal Compact Modeling Smart Power Devices at Infineon, who has welcomed all the attendees and shared Infineon view on the compact modeling and its importance in the TCAD/EDA modeling/design ecosystem. 

A group of 40+ international academic researchers and modeling engineers attended 10 technical compact modeling presentations covering full development chain from the nanoscaled technologies thru semiconductor devices modeling to advanced IC design support. The MOS-AK speakers have shared their latest perspectives on compact/SPICE modeling and Verilog-A standardization in the dynamically evolving semiconductor industry and academic R&D. The event featured advanced technical presentations covering compact model development, implementation, deployment and standardization covering full engineering R&D chain: TCAD/processing, device modeling, transistor level IC design support. These contributions were delivered by leading academic and industrial experts, including: [1] Klaus-Willi Pieper, Overview of the Compact Modeling at Infineon; [2] James Ma et al, Advanced Fast on-wafer Low-frequency Noise Measurement with High Resolution, Wide Bandwidth and Large Biasing Current Range; [3] Volker Gloeckel, Advances in Statistical Compact Modeling; [4] Markus Becherer, et al, Compact Modeling of Nanomagnetic Logic Devices and Circuits; [5] Gražvydas Žiemys, Devices for Nanomagnetic Logic; [6] Paul Roseingrave, Modelling Emerging Devices through EU ASCENT Network; [7] Jushan Xie, How Is CMC Standard Model Implemented and Verified In Simulator?; [8] Maria Cotorogea et al, Virtual Prototyping for Power Diode and IGBT Development; [9] Franz Sischka, et al, Modeling of Device Aging - Example: Diode; [10] Katja Puschkarsky, Device Aging Simulations Enabling Circuit Optimizations; [11] Fabio A. Velarde Gonzalez, Integration of Aging Models Across Different EDA Environments A case study implementing HCI and NBTI models for X-FAB XU035 CMOS technology; During complementary MOS-AK Panel Discussion on Compact Model Licensing Peter Lee, CMC Chair highlighted current status of the CMC compact model licensing status, stating that final discussions are converging to establish official licensing in the next few months. All the presentations are available online for download at <>. Selected best presentation will be recommended for further publication in the IJHSES.

The MOS-AK, international compact modeling association, has various deliverables and initiatives including a book entitled "Open Source TCAD/EDA Tools for Compact Modeling" and open Verilog-A model directory with supporting FOSS TCAD/EDA tools. The MOS-AK Association plans to continue its standardization efforts by organizing future compact modeling meetings, workshops and courses in Europe, USA, China and India throughout coming 2018/2019 years, including:

About MOS-AK Association:

MOS-AK, an international compact modeling association primarily focused in Europe, to enable international compact modeling R&D exchange in the North/Latin Americas, EMEA and Asia/Pacific Regions. The MOS-AK Modeling Working Group plays a central role in developing a common information exchange system among foundries, CAD vendors, IC designers and model developers by contributing and promoting different elements of compact/SPICE modeling and its Verilog-A standardization and related CAD/EDA tools including FOSS for the compact/SPICE models development, validation/implementation and distribution. For more information please visit:

About  Infineon Technologies AG:
Infineon designs, develops, manufactures and markets a broad range of semiconductors and system solutions. The focus of its activities is on automotive electronics, industrial electronics, RF applications, mobile devices and hardware-based security. Combining entrepreneurial success with responsible action, at Infineon we make the world easier, safer and greener. Barely visible, semiconductors have become an indispensable part of our daily lives. Infineon's components play an essential role wherever electric energy is generated, transmitted and used efficiently. Furthermore, they safeguard data communication, improve safety on roads and reduce automotive emissions. Product range includes:
  • Automotive: 32-bit automotive microcontrollers for powertrain, safety and driver assistance systems, discrete power semiconductors, IGBT modules, industrial microcontrollers, magnetic and pressure sensors, power ICs, radar sensor ICs (77 GHz), transceivers (CAN, LIN, Ethernet, FlexRay), voltage regulators
  • Industrial Power Control: bare die business, discrete IGBTs, driver ICs, IGBT modules (low-power, medium-power, high-power), IGBT module solutions incl. IGBT stacks, silicon carbide modules
  • Power Management & Multimarket: control ICs, customized chips (ASICs), discrete low-voltage and high-voltage power MOSFETs, gallium nitride (GaN) transistors, GPS low-noise amplifiers, low-voltage and high-voltage driver ICs, MEMS and ASICs for silicon microphones, pressure sensors, radar sensor ICs (24 GHz, 60 GHz), RF antenna switches, TVS (transient voltage suppressor) diodes
  • Chip Card & Security: contact-based security controllers, contactless security controllers, dual-interface security controllers (contact-based and contactless), embedded security controllers
Presence: 36 research and development locations, 18 manufacturing locations and about 44 sales offices worldwide

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Capacitive #RF #MEMS switch design and simulation #Modeling

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March 22, 2018 at 10:48AM

Mar 9, 2018

[1889 reeds] Open-source circuit simulation tools for RF compact semiconductor device #modeling

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March 09, 2018 at 10:30AM

Mar 6, 2018

Experimental Observation and Simulation #Model for Transient Characteristics of Negative-Capacitance in...

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March 06, 2018 at 02:31PM

Experimental Observation and Simulation #Model for Transient Characteristics of Negative-Capacitance in Ferroelectric HfZrO2 Capacitor

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March 06, 2018 at 02:31PM


Aldi Hoxha1, Paolo Scarbolo1, Andrea Cossettini2, Federico Pittino3, Luca Selmi4
1. DPIA, Università degli Studi di Udine 2. University of Udine 3. Università di Udine 4
DPIA, Università degli Studi di Udine, Italy

Abstract: ENBIOS-2D Lab is a tool to illustrate and to study simple Ion Sensitive Field Effect Transistor structures in two dimensions. Together with its companion tool ENBIOS-1D Lab, it is meant for use as a teaching tool in support of undergraduate or graduate courses on the basic physics of transduction in ion and particle sensors, and to assist early stage researchers getting familiar with some basic concepts in the field. At the present stage, ENBIOS-2D Lab supports simulation and visualization of DC I-V characteristics, impedance/admittance spectra as well as DC and AC potential/carrier/ion distributions in simple two-dimensional ISFET structures. A broader set of case studies will become available with future releases of the tool. The companion ENBIOS-1D Lab tool offers the possibility to simulate simple Electrolyte/Insulator/Semiconductor systems in one-dimension. The physical system is modelled with the Poisson/Boltzmann (DC) and Poisson/Nernst/Planck - Poisson/Drift/Diffusion (AC small signal) equations coupled to the site-binding charge model equations at the Electrolyte/Insulator interfaces. Dedicated models are implemented for the frequency and salinity dependence of the electrolyte electrical permittivity and the temperature dependence of the ions' mobility (in water solvent). ENBIOS-2D Lab is powered by ENBIOS, (Electronic Nano-BIOsensor Simulator), a general purpose three-dimensional Control Volume Finite Element Method (CVFEM) simulator developed in-house at the University of Udine - Italy. ENBIOS simulates in three dimensions (3D) the DC and AC small signal impedance response to ions and micro/nanoparticles of three-dimensional devices made of semiconductor, insulator and electrolyte materials.

[1] P. Scarbolo, E. Accastelli, F. Pittino, T. Ernst, C. Guiducci, L. Selmi, “Characterization and modelling of differential sensitivity of nanoribbon-based pH-sensors”, Proceedings of the 2015 Transducers - 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 21-25 June 2015, pp. 2188-2191

[2] Paolo Scarbolo, Enrico Accastelli, Thomas Ernst, Carlotta Guiducci and Luca Selmi, "Analysis of Dielectric Microbead Detection by Impedance Spectroscopy with Nanoribbons", IEEE Nano Conference, August 2016.

[3] Federico Pittino and Luca Selmi, "Use and comparative assessment of the CVFEM method for Poisson–Boltzmann and Poisson–Nernst–Planck three dimensional simulations of impedimetric nano-biosensors operated in the DC and AC small signal regimes", Comput. Methods Appl. Mech. Engrg., v.278, (2014), pp.902–923.

Mar 4, 2018

A New Analytical Pinned Photodiode Capacitance #Model - IEEE Journals & Magazine

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March 04, 2018 at 12:45PM

A New Analytical Pinned Photodiode Capacitance #Model - IEEE Journals & Magazine

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March 04, 2018 at 12:45PM

Mar 2, 2018

[paper] Compact modeling of SiC Schottky barrier diode and its extension to junction barrier Schottky diode

Dondee Navarro1, Fernando Herrera1, Hiroshi Zenitani2, Mitiko Miura-Mattausch1, Naoto Yorino2, Hans Jürgen Mattausch1,2, Mamoru Takusagawa3, Jun Kobayashi3 and Masafumi Hara3

Published 19 February 2018 • © 2018 The Japan Society of Applied Physics
Japanese Journal of Applied Physics, Volume 57, Number 4S

1 HiSIM Research Center, Hiroshima University, Hiroshima 739-8530, Japan
2 Graduate School of Engineering, Hiroshima University, Hiroshima 739-8530, Japan
3 Toyota Motor Corporation, Toyota, Aichi 470-0309, Japan

Abstract: A compact model applicable for both Schottky barrier diode (SBD) and junction barrier Schottky diode (JBS) structures is developed. The SBD model considers the current due to thermionic emission in the metal/semiconductor junction together with the resistance of the lightly doped drift layer. Extension of the SBD model to JBS is accomplished by modeling the distributed resistance induced by the p+ implant developed for minimizing the leakage current at reverse bias. Only the geometrical features of the p+ implant are necessary to model the distributed resistance. Reproduction of 4H-SiC SBD and JBS current–voltage characteristics with the developed compact model are validated against two-dimensional (2D) device-simulation results as well as measurements at different temperatures [read more:]

Fig.: Electron current density in a JBS cross-section. JBS has a peak density at the n− region adjacent to the p+ implant.