Tuesday, July 30, 2019

[mos-ak] Joint ESSDERC/ESSCIRC Tutorial in Krakow (PL) on Sept.23, 2019

Joint ESSDERC/ESSCIRC Tutorial: 
Nanoscale Technology – Transistor Modeling – IC Design 
Auditorium Maximum, the Jagiellonian University
Krakow (PL) on Sept.23, 2019

Together with local organization team, MOS-AK Association invites you to Joint ESSDERC/ESSCIRC Tutorial: Nanoscale Technology – Transistor Modeling – IC Design which will be organized at Auditorium Maximum of the Jagiellonian University in Krakow (PL) on Sept.23, 2019

Our joint ESSDERC/ESSCIRC Tutorial aims to provide in-depth coverage of highly relevant R&D topics by world-class experts. We will discuss and present the frontiers of electron device modeling with emphasis on the complete UT SOI development chain, reviewing the nanoscale level technologies, devices TCAD numerical simulations, thru its simulation-aware compact/SPICE modeling up to selected topics of the transistor level IC design for advanced applications. This joint tutorial is designed for academic researchers, device process engineers who are interested in device modeling; academic/industrial ICs designers (to explore RF/Analog/Mixed-Signal) and those starting in these areas as well as device fabrication, electrical characterization, modeling and parameter extraction engineers. The content will be beneficial for anyone who needs to learn what is really behind the IC fabrication and its simulation in using modern SPICE/Verilog-A device models (tutorial agenda listed below).

Joint ESSDERC/ESSCIRC Tutorial will be followed (Sept. 24-26, 2019) by four 
TRACK4: "'Compact Modeling of Devices and Circuits" Sessions with invited talk "The Synergy SPICE – Compact Models" by Prof. Andrei Vladimirescu and 11 regular conference papers (see all the details below)

Tutorial Agenda: 
8:00 – 8:30 – Registration
8:30 – 9:15 – Technology: Guillaume Besnard, SOITEC (F) – UT SOI Processing and Device Fabrication
9:15 – 10:00 – Technology: Ahmed Nejim, Silvaco Inc. (USA) – UT SOI TCAD Numerical Process/Device Simulation
10:00 – 10:30 – Coffee break
10:30 – 11:15 – Devices: Thierry Poiroux, CEA–Leti (F)  Compact modeling for FDSOI technologies: Main challenges and possible solutions
11:15 – 12:00 – Devices: Roberto Murphy, INAOE (MX) – RF Electrical Characterization
12:30 – 14:00 – Lunch
14:00 – 14:45 – Design: Christian Enz, EPFL (CH) – Systematic Design of Low-power Analog/RF CMOS Circuits using the Inversion Coefficient
14:45 -15:30 – Design: Humberto Andrade da Fonseca (Cadence, US) – Advanced SOI Design and Reliability/Ageing Simulations
15:30 – 16:00 – Coffee break
16:00 – 17:00 – Panel discussion
Venue:
Auditorium Maximum, the conference center of the Jagiellonian University
ul. Krupnicza 33, 
31-123 Kraków (PL)
Online registrations will be accepted until 20 August 2019.  
https://esscirc-essderc2019.org/how-to-register/  

On the behalf of the local organization team
Wladek Grabiński (GMC, CH)
Daniel Tomaszewski (ITE, PL)
ESSDERC/ESSCIRC
TRACK4: Compact Modeling of Devices and Circuits
https://esscirc-essderc2019.org/program/
Tuesday September 24, 2019 (14:00-15:20)

IdTimePaper Title/Location/Session
5189 14:00 -
14:26
Cryogenic MOSFET Threshold Voltage Model
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
5246 14:26 -
14:53
Subthreshold Mismatch in Nanometer CMOS at Cryogenic Temperatures
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
5216 14:53 -
15:20
Test Chip for Identifying Spice-Parameters of Cryogenic BiFET Circuits
Location: Seminar room
Session: Compact Modeling Under Cryogenic Conditions 
Wednesday September 25, 2019 (10:20-12:00)
IdTimePaper Title/Location/Session
5226 10:20 -
10:53
First Uni-Traveling Carrier Photodiode Compact Model Enabling Future Terahertz Communication System Design
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices
5253 10:53 -
11:26
Impact of SiGe HBT Hot-Carrier Degradation on the Broadband Amplifier Output Supply Current
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices 
5180 11:26 -
12:00
Monolithically Integrated GaN Power ICs Designed Using the MIT Virtual Source GaNFET (MVSG) Compact Model for Enhancement-Mode p-GaN Gate Power HEMTs, Logic Transistors and Resistors
Location: Seminar room
Session: Modeling of Compound Semiconductor Devices 
Wednesday September 25, 2019 (14:20-15:40)
IdTimePaper Title/Location/Session
5363 14:20 -
14:46
The Synergy SPICE – Compact Models
Location: Seminar room
Session: Advances in MOSFET Modeling 
5141 14:46 -
15:13
Comparison of Modeling Approaches for Transistor Degradation: Model Card Adaptations Vs Subcircuits
Location: Seminar room
Session: Advances in MOSFET Modeling 
5316 15:13 -
15:40
FOSS EKV2.6 Verilog-A Compact MOSFET Model
Location: Seminar room
Session: Advances in MOSFET Modeling 
Thursday September 26, 2019 (10:20-12:00)
IdTimePaper Title/Location/Session
5251 10:20 -
10:53
Compact Analytical Model for Trap-Related Low Frequency Noise in Junctionless Transistors
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
5329 10:53 -
11:26
Compact Modeling of Low Frequency Noise and Thermal Noise in Junction Field Effect Transistors
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
5239 11:26 -
12:00
Evaluation of Static/Transient Performance of TFET Inverter Regarding Device Parameters Using a Compact Model
Location: Medium Aula A
Session: Modeling of Trap Effects and Noise 
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Tuesday, July 23, 2019

#IEEE Update of the International Roadmap for Devices and Systems (#IRDS) Sets Course for Computer and Electronics Industry Growth https://t.co/WwvxXl4Sq8 #paper https://t.co/ZOwLjWV0Sr


from Twitter https://twitter.com/wladek60

July 23, 2019 at 05:31PM
via IFTTT

Looking for #Quality in #TCAD-Based Papers #IEEE #TED: “What is the definition of high quality?” In this editorial, at least partially, this question is addressed. https://t.co/c1G0YXgIdD #paper https://t.co/MbhLzUa4AZ


from Twitter https://twitter.com/wladek60

July 23, 2019 at 02:11PM
via IFTTT

#IBM gives #cancer_killing drug AI project to the #OpenSource community | ZDNet https://t.co/GdgoUmx5UT https://t.co/lfC2v7MuFP


from Twitter https://twitter.com/wladek60

July 23, 2019 at 11:34AM
via IFTTT

CODEOCEAN: Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs

CODEOCEAN capsule written in OCTAVE which calculates the current and transconductances (gm, gmd and gms) using the charge based approach introduced in [1]. The capsule generates graphs demonstrating model versus TCAD simulations. The user can use the capsule code to experiment and reproduce the results in the paper [1]. 
The capsule is provided at the IEEE explorer site under the "Code&Datasets" link. https://ieeexplore.ieee.org/document/8371530 / doi: 10.1109/TED.2018.2838101 
Or at the link below https://codeocean.com/capsule/8244803/tree"

FIG: IdVg and gmVg at Vd=10mV
REF:
[1] N. Makris, F. Jazaeri, J. Sallese, R. K. Sharma and M. Bucher, "Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances," in IEEE Transactions on Electron Devices, vol. 65, no. 7, pp. 2744-2750, July 2018.
doi: 10.1109/TED.2018.2838101
Abstract: The double-gate (DG) junction field-effect transistor (JFET) is a classical electron device, with a simple structure that presents many advantages in terms of not only device fabrication but also its operation. The device has been largely used in low-noise applications, but also more recently, in power electronics. Physics-based compact models for JFETs, contrary to MOSFETs, are, however, scarce. In this paper, an analytical, charge-based model is established for the mobile charges, drain current, and transconductances of symmetric DG JFETs, covering all regions of device operation. The model is unified and continuous from subthreshold to linear and saturation operation and is valid over a large temperature range. This charge-based model constitutes the basis of a full compact model of the DG JFET.
Keywords: junction gate field effect transistors;semiconductor device models;mobile charges;double-gate junction field-effect transistor;classical electron device;low-noise applications;power electronics;long-channel symmetric double-gate junction FET;symmetric DG JFET;charge-based modeling;physics-based compact models;drain current;Electric potential;JFETs;Logic gates;Integrated circuit modeling;Junctions;Mathematical model;MOSFET;Analytical model;circuit simulation;compact model;junction field-effect transistor (JFET);temperature effect



[paper] A Surface-Potential-Based Analytical I-V Model of Full-Depletion Single-Gate SOI MOSFETs

1
Department of Electrical and Electronic Teaching, 
College of Information Science and Engineering, 
Huaqiao University, Xiamen 361021, China

2
Department of Electronic Engineering, Jinan University, Guangzhou 510632, China
*
Correspondence: yufei_jnu@126.com; Tel.: +86-0592-6162-385
These two authors contributed equally to this work.

Received: 10 May 2019 / Accepted: 12 June 2019 / Published: 14 July 2019
Electronics 20198(7), 785; https://doi.org/10.3390/electronics8070785

Abstract

: 
A surface-potential-based analytical I-V model of single-gate (SG) silicon-on-insulator (SOI) MOSFETs in full-depletion (FD) mode is proposed and compared with numerical data and Khandelwal’s experimental results. An explicit calculation scheme of surface potential, processing high computation accuracy and efficiency, is demonstrated according to the derivation of the coupling relation between surface potential and back-channel potential. The maximum absolute error decreases into 10−7 V scale, and computation efficiency is improved substantially compared with numerical iteration. Depending on the surface potential, the drain current is derived in closed-form and validated by Khandelwal’s experimental data. High computation accuracy and efficiency suggest that this analytical I-V model displays great promise for SOI device optimizations and circuit simulations.

Keywords:
 silicon-on-insulator MOSFETs; surface potential; back-channel potential; full-depletion; analytical I-V model
Figure 1. x-y cross section of silicon-on-insulator (SOI) MOSFETs.

Monday, July 15, 2019

WEBINAR: GPU-Powered SPICE – The Way Forward for Analog Simulation - #Empyrean #Semiwiki https://t.co/JP9u2Tv6Be #paper https://t.co/bY6kqzdFZf


from Twitter https://twitter.com/wladek60

July 15, 2019 at 11:57AM
via IFTTT

Friday, July 12, 2019

IEEE ICECS 2019 paper submission deadline

ICECS 2019 paper deadline submission is approaching fast: July 15th, 2019

Please distribute this reminder to possible contributors and interested researchers and colleagues. Topics of interest include but are not limited to:

• Analog/mixed-signal/RF circuits
• Biomedical and Bio-Inspired Circuits and Systems
• EDA, Test and Reliability
• Digital circuits and systems
• Linear and Non-linear Circuits
• Low-Power Low-Voltage Design
• Microsystems
• Neural networks, Machine and Deep Learning
• Sensors and Sensing Systems
• Signal Processing, Image and Video
• VLSI Systems and Applications

The technical committee invites authors to submit 4-page papers in standard IEEE double-column format, including references, figures and tables, to clearly present the work, methods, originality, significance and applications of the techniques discussed.

Maurizio Valle; IEEE ICECS 2019 General Chair
https://www.ieee-icecs2019.org/

Monday, July 8, 2019

Leti Workshop at SISPAD 2019

Leti is pleased to invite you to attend our ‘Advanced Simulations for Emerging Non-Volatile Memory Technologies’ seminar, which is organized as an official satellite event of the 2019 IEEE SISPAD Conference (http://www.sispad2019.org). By the proposed seminar, we will emphasize how simulation and modeling support memory technology developments and device behavior understanding.

This event will held on Tuesday, September 3rd from 5:00 PM to 7:30 PM, Palazzo di Toppo Wassermann, Università degli Studi di Udine, Udine, Italy (i.e. at the SISPAD 2019 conference location).
PROGRAM

  • Welcome and Introduction – T. Poiroux
  • Innovative non-volatile memory technologies: a revolution for the storage towards a memory that thinks – G. Navarro
  • Electro-thermal and material simulations for PCM – O. Cueto
  • Multiphase field method for the simulation of the complex phase changes in PCM – R. Bayle
  • Invited talk: Self-consistent TCAD simulation of chemical reactions within electronic devices. Application to CBRAM and OxRAM – Silvaco
  • Networking cocktail

Registration is free but, due to limited seats, please register just sending an email to thierry.poiroux@cea.fr and sebastien.martinie@cea.fr.

Feel free to share this invite with your colleagues !