Saturday, June 30, 2018

CMOS-Integrated Low-Noise Junction Field-Effect Transistors #JFET for #Bioelectronic Applications - IEEE Journals & Magazine https://t.co/2xBWocU81z #paper https://t.co/2xBWocU81z


from Twitter https://twitter.com/wladek60

June 30, 2018 at 10:22PM
via IFTTT

CMOS-Integrated Low-Noise Junction Field-Effect Transistors #JFET for #Bioelectronic Applications - IEEE Journals & Magazine https://t.co/2xBWocU81z #paper


from Twitter https://twitter.com/wladek60

June 30, 2018 at 10:21PM
via IFTTT

Monday, June 18, 2018

2018 SINANO Modeling Summer School in Tarragona, Spain

The 8th SINANO Modeling Summer School
in Tarragona (Catalonia) 
September 25 to 28 2018

The SINANO summer school was established in 2005, in the from of the SINANO Network of Excellence (funded by the 7th FB of the EU). The previous editions were held in Glasgow (2005) and in Bertinoro, Italy (2016, 2014, 2012, 2010, 2008, 2006).

The Sinano Modeling Summer School is a bi-annual comprehensive set of classes aimed at doctoral or postdoctoral level researchers from both industry and academia. Via a program consisting of lectures, tutorials, advanced discussion groups, students will expand and refine their knowledge of the design, optimization, simulation and characterization of cutting edge semiconductor devices, with the world's leading device simulation and electrical characterization experts. This year the SINANO Modeling Summer School will target multi-scale modeling of semiconductor devices.

The 7th SINANO Modeling Summer School is partially sponsored by the SINANO Institute and the DOMINO EU H2020 project. It is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona. The Chair of the 8th SINANO Modeling Summer School is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project.

Registration, with reduced fees for students, will be open soon.

2018 SINANO Modeling Summer School Program:

Tuesday, September 25 2018
8:30
Opening Session
Benjamin Iñiguez (Universitat Rovira i Virgili)
IEEE EDS MINI-COLLOQUIUM
ON SEMICONDUCTOR DEVICE MODELING
8:55
"Characterization Techniques for Ultrathin Materials and Devices".
Sorin Cristoloveanu (MINATEC, France)
10:05
"Compact Modeling of Organic Thin Film Transistors"
Jamal Deen (McMaster University, Canada)
11:15
Coffee Break
11:40
"Multiscale Reliability Modeling"
Tibor Grasser (TU-Wien, Austria)
12:50
"FOSS TCAD/EDA Tools for Compact Modeling"
Wladek Grabinski (GMC, Switzerland)
14:00
Lunch
SINANO MODELING SUMMER SCHOOL
15:15
"Monte Carlo simulation of THz nanodevices based on III-V semiconductors"
Javier Mateos (University of Salamanca, Spain)
16:25
"Monte Carlo simulation of emerging Si devices"
Francisco Gámiz (University of Granada, Spain)
20:00
Welcome Reception
Wednesday September 26 2018
9:00
"Steep-slope devices: prospects and challenges"
Elena Gnani (University of Bologna)
10:10
"Physics of novel devices for quantum information science"
Thierry Ferrus et al. (Hitachi Cambridge Laboratory, UK)
11:20
Coffee break
11:30
"Spiking Neural Circuits and Systems"
François Danneville (IEMN, France)
12:50
"Time Dependent Variability in CMOS devices: characterization and compact modeling"
Montserrat Nafria (Autonomous University of Barcelona, Spain)
14:00
Lunch
15:15
"Atomic-scale modeling of semiconductor technology"
Kurt Stokbro (Synopsis QuantumWise, Denmark)
16:25
"Physics and modeling of organic and hybrid photovoltaic devices"
Lluís F. Marsal (Universitat Rovira i Virgili, Spain)
Thursday, June 27 2018
9:00
"Complex structure deformation simulation in TCAD for flexible electronics"
Ahmed Nejim (Silvaco Europe Ltd., UK)
10:10
"Mathematical and Semi-physical modeling for emerging device tecnologies & needs"
Firas Mohamed. (Infiniscale, France)
11:20
Coffee break
11:30
"Advanced modeling of AlGaN/GaN HEMT transistors: the ASM HEMT model"
Sourabh Khandelwal (Macquarie University, Australia)
12:50
"Electrical characterization of low frequency noise"
Thomas Gneiting (AdMOS GmbH, Germany)
14:00
Lunch
15:15
"TCAD and compact modeling of source-gated transistors"
Radu Sporea (University of Surrey, UK)
16:25
"Compact modeling of memristors"
Rodrigo Picos (Universitat de les Illes Balears, Spain)
20:30
Gala Dinner

Friday, September 28 2018
9:00
"Current status and trends in RF SOI material and devices"
Jean-Pierre Raskin (Université catholique de Louvain, Belgium)
10:10
"Characterization and Modeling of Organic Diodes and TFTs""
Yvan Bonnassieux (Ecole Polytechnique, France)
11:20
Coffee break
11:30
"Mechanical Deformation-Aware Compact Modeling for Flexible Electronics"
Slobodan Mijalkovic (Silvaco Europe Ltd., UK)
12:50
"Physics and operation of sonic devices"
Giuseppe Iannaccone (University of Pisa, Italy)
14:00
Lunch
15:15
"Parameter extraction and modeling of Amorphous Oxide TFTs"
Benjamin Iñiguez (Universitat Rovira i Virgili, Spain)
16:25
Closing Session

I strongly encourage researchers in semiconductor devices, especially Ph D students and postdocs to attend the SINANO Modeling Summer School in Tarragona!!!

Prof. Benjamin Iñiguez
The Chair of the 8th SINANO Modeling Summer School
Coordinator of the DOMINO project

Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.
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Saturday, June 16, 2018

2018 SINANO Modelling Summer School in Tarragona, Spain

The 8th SINANO Modelling Summer School will take place in Tarragona (Catalonia, Spain) from September 25 to 28 2018.

The SINANO summer school was established in 2005, in the from of the SINANO Network of Excellence (funded by the 7th FB of the EU). The previous editions were held in Glasgow (2005) and in Bertinoro, Italy  (2016, 2014, 2012, 2010, 2008, 2006).

The Sinano Modelling Summer School is a bi-annual comprehensive set of classes aimed at doctoral or postdoctoral level researchers from both industry and academia. Via a programme consisting of lectures, tutorials, advanced discussion groups, students will expand and refine their knowledge of the design, optimization, simulation and characterization of cutting edge semiconductor devices,  with the world’s leading device simulation and electrical characterization experts.

This year the SINANO Modelling Summer School will target multi-scale modelling of semiconductor devices.

The 7th SINANO Modelling Summer School is partially sponsored by the SINANO Institute and  the DOMINO EU H2020 project.

It is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona. The  Chair of the 8th SINANO Modelling Summer School is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project. 

Registration, with reduced fees for students, will be open soon. 

Here is updated programme:



Tuesday, September 25 2018


8:30
Opening Session
Opening
Benjamin Iñiguez (Universitat Rovira i Virgili)

IEEE EDS MINI-COLLOQUIUM ON SEMICONDUCTOR DEVICE MODELLING

8:55
"Characterization Techniques for Ultrathin Materials and Devices".
Sorin Cristoloveanu (MINATEC, France)

10:05
"Compact Modeling of Organic Thin Film Transistors"
 Jamal Deen (McMaster University, Canada)

11:15
Coffee Break

11:40
"Multiscale Reliability Modeling"
Tibor Grasser (TU-Wien, Austria)


12:50
"FOSS TCAD/EDA Tools for Compact Modelling"
Wladek Grabinski (GMC, Switzerland)

14:00
Lunch

SINANO MODELLING SUMMER SCHOOL




15:15


"Monte Carlo simulation of THz nanodevices based on III-V semiconductors"
Javier Mateos (University of Salamanca, Spain)

 
16:25


20:00
“Monte Carlo simulation of emerging Si devices”
Francisco Gámiz (University of Granada, Spain)

Welcome Reception







Wednesday September 26 2018


9:00
"Steep-slope devices: prospects and challenges"
Elena Gnani (University of Bologna)

10:10
"Physics of novel devices for quantum information science"
Thierry Ferrus et al. (Hitachi Cambridge Laboratory, UK)

11:20
Coffee break

11:30
“Spiking Neural Circuits and Systems”
François Danneville (IEMN, France)

12:50
"Time Dependent Variability in CMOS devices: characterization and compact modelling"
Montserrat Nafria (Autonomous University of Barcelona, Spain)


14:00
Lunch


15:15
Atomic-scale modelling of semiconductor technology"
Kurt Stokbro (Synopsis QuantumWise, Denmark)

16:25
"Physics and modelling of organic and hybrid photovoltaic devices"
Lluís F. Marsal (Universitat Rovira i Virgili, Spain)


Thursday, June 27 2018








9:00


10:10
Complex structure deformation simulation in TCAD for flexible electronics
Ahmed Nejim (Silvaco Europe Ltd., UK)

"Mathematical and Semi-physical modeling for emerging device tecnologies & needs"
Firas Mohamed. (Infiniscale, France)

11:20
Coffee break

11:30
“Advanced modeling of AlGaN/GaN HEMT transistors: the ASM HEMT model”
Sourabh Khandelwal (Macquarie University, Australia)

12:50
"Electrical characterization of low frequency noise"
Thomas Gneiting (AdMOS GmbH, Germany)


14:00
Lunch

15:15
 “TCAD and compact modelling of source-gated transistors”
 Radu Sporea (University of Surrey, UK)

16:25


20:30          
"Compact modeling of memristors”
Rodrigo Picos (Universitat de les Illes Balears, Spain)

Gala Dinner





Friday, September 28 2018




9:00


10:10
Current status and trends in RF SOI material and devices
Jean-Pierre Raskin (Université catholique de Louvain, Belgium)

"Characterization and Modelling of Organic Diodes and TFTs”"
Yvan Bonnassieux. (Ecole Polytechnique, France)

11:20
Coffee break

11:30
“Mechanical Deformation-Aware Compact Modeling for Flexible Electronics”
Slobodan Mijalkovic(Silvaco Europe Ltd., UK)

12:50             "Physics and operation of sonic devices”
                      Giuseppe Iannaccone (University of Pisa, Italy)

14:00             Lunch

15:15            “Parameter extraction and modelling of Amorphous Oxide TFTs”
                      Benjamin Iñiguez (Universitat Rovira i Virgili, Spain)

16:25             Closing Session



 I strongly encourage researchers in semiconductor devices, especially Ph D students and postdocs to attend the SINANO Modelling Summer School in Tarragona!!!


Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most  important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.