Wednesday, April 29, 2009

4th Silicon Saxony Day

in fact, coming 4th Silicon Saxony Day will be organized as a two days evetn with the plenary session on 12.05.09 with the speakers from the semiconductor, photovoltaic, automotive, aerospace and software industry presenting examples of the Saxon High-Tech competitiveness. And following technical sessions on 13.05.09:
  • Photovoltaic
  • MEMS – Sensors – Photonic
  • Smart Electronics and Applications
  • Services and Networking
  • SATNAV Saxony Kick-off Meeting
  • Cool Silicon Kick-off Meetings

IEEE Papers in April 2009

Two nice papers:

A Compact Model for Undoped Silicon-Nanowire MOSFETs With Schottky-Barrier Source/Drain

Zhu, G.; Zhou, X.; Lee, T. S.; Ang, L. K.; See, G. H.; Lin, S.; Chin, Y. K.; Pey, K. L.

Metal-Gate FinFET Variation Analysis by Measurement and Compact Model
O'uchi, S.; Matsukawa, T.; Nakagawa, T.; Endo, K.; Liu, Y.; Sekigawa, T.; Tsukada, J.; Ishikawa, Y.; Yamauchi, H.; Ishii, K.; Suzuki, E.; Koike, H.; Sakamoto, K.; Masahara, M.

2009 IEEE RFIC Symposium Boston, Massachusetts June 7-9, 2009

The 2009 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium will be held in Boston, Massachusetts on June 7-9, 2009 in conjunction with the IEEE MTT-S International Microwave Symposium. It opens Microwave Week 2009, the largest world-wide RF/Microwave meeting of the year.

Conference highlights are now online!

  • Plenary talks
  • Christopher Snowden, Ph.D., Vice-Chancellor and CEO of the Uni Surrey, Guildford, UK,
    “Cost-effective Semiconductor Technologies for RF and Microwave Applications.”
  • George W. Everhart, CEO of Alien Technology Corporation
    “Real world RFID Deployments: What Makes Them Work.”
  • Workshops
  • Panel Sessions

For all the details, please check the program book.

Wednesday, April 22, 2009

IMEC presented 22nm CMOS SRAM 0.099µm2 cell:

IMEC presented the world's first functional 22nm CMOS SRAM cells made using EUV lithography. The 0.099µm2 SRAM cells are made with FinFETs. In its core EC program PULLNANO, IMEC works together with leading IC companies on future CMOS technologies. Key partners in 2009 are Intel, Micron, Panasonic, Samsung, TSMC, Elpida, Hynix, Powerchip, Infineon, NXP, Qualcomm, Sony, ST Microelectronics. With such concerted collaborations, the semiconductor industry is able to keep innovating and to follow Moore's momentum, noted Luc Van den hove, COO at IMEC.

Further information on IMEC can be found at

Saturday, April 18, 2009

IBM 28nm CMOS Technology

IBM, Chartered Semiconductor Manufacturing Ltd., GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, Co., Ltd., and STMicroelectronics have defined and are jointly developing a 28nm, high-k metal gate (HKMG), low-power bulk CMOS process technology.

>>> Press releases

Friday, April 17, 2009

Process for the Selection of the Next Generation Multigate Compact Models

The Compact Modeling Council (CMC) will start the process for the selection of a Multi-Gate MOSFET Compact Model with four-part standardization plan:
  • Model pre-evaluation (reference data, test circuits, etc)
  • Physical model accuracy evaluation
  • Model functionality in IC simulation
  • Formal CMC balloting
As the next steps the CMC Subcommittee finalizes process and model requirements documents, then generates data requirements document for solicit candidate models. Expect standardization effort to end by ~YE 2010.

CMOS vs. Bipolar Operational Amplifiers: Which is best for my application?

CMOS, bipolar or even BiCMOS are common process technologies used for the development of operational amplifiers, and each of these process technologies offers their own advantages and disadvantages when it comes to op amp design. Which one’s the best in terms of:
  • Power Consumption
  • Voltage Offset
  • Noise Performance
>>> Read further

Thursday, April 16, 2009

Process for the Selection of the Next Generation SOI MOSFET Compact Models

The Compact Modeling Council (CMC) is carrying out Process for the Selection of the Next Generation SOI MOSFET Compact Models.

The CMC is going to select SOI models for both partially-depleted (PD) and dynamic depletion (DD) applications. DD refers to SOI devices which exhibit PD behavior forsome bias regions, but are fully-depleted (FD) for others.

The selected model developers presented their models in the to the CMC Meeting in Boston, MA on 6/5/2008.

The selected developers were : PSP-SOI-PD (for PD SOI), HiSIM SOI (for PD/DD SOI), XSIM (for DD SOI), ULTRA-SOI (for DD SOI) and PSP-SOI-DD

OKIsemi is sponsoring HiSIM SOI, FSL is sponsoring PSP-SOI-DD and IBM is sponsoring PSP-SOI-PD.

Developers are currently carrying out the required tests.


The 12 session of the MIGAS Summer School (International Summer School on Advanced Microelectronics) will be dedicated to Nanoscale CMOS and Si-Based Beyond CMOS Nanodevices.

MIGAS 2009 will take place in Autrans (French Alps) from June 20 to 26 2009.

MIGAS is addressed to PhD students, engineers and researchers coming both from the university and from industry of the semiconductors.

The attendees will be able to improve their knowledge on nanoelectronic devices by means a set of lectures conducted by top international scientists.

The scienfific programme will consists of the following lectures:

1) Introduction to SOI
- What is SOI ?, J.P. Colinge, Tyndall (confirmed)
- SOI zoo
- Technology modules

2) SOI Material
- Smart-Cut and beyond, L. Clavelier(confirmed)
- SOI zoo

3) SOI transistors device physics
- Mechanisms in PDSOI and FDSOI devices, O. Faynot, Leti (confirmed)
- Transport in double-gate and nanowire MOSFET, T. Hiramoto, University of Tokyo (confirmed)
- Quantum and tunneling SOI devices, A. Zaslavsky,USA (confirmed)
- Advanced simulation, F. Gamiz, UGR (confirmed)

4) Electrical characterization and reliability
- Advanced techniques for material and device characterization, S. Cristoloveanu,IMEP-LAHC (confirmed)
- Radiation effect and reliability, R. Schrimpf, USA (confirmed)
- How SOI can solve variability issues ?, A. Asenov, Glasgow University (confirmed)

5) Designing SOI circuits
- SOI circuit design plateform, P. Flatresse,STMicroelectronics (confirmed)
- Radiation effect and reliability, R. Schrimpf, USA (confirmed)
- How SOI can solve variability issues ?, A. Asenov, Glasgow University (confirmed)

Besides, MIGAS includes a great social programme, with activities such as excursions the day before the beginning of the school, wine tastings, and copious dinners based on the excellent Dauphinoise and Vercors cuisine, and with great wines. Of course, the area around Autrans offers excellent opportunities for hiking, mountaineering, mountain-biking, lake swimming and more.

Registration includes accomodation in the resort as well as all meals.

Second International Symposium on Organic Semiconductor Materials, Devices and Processing

The International Symposium on Organic Semiconductor Materials and Devices (Symposium
E9) will be held during the 216th ECS Meeting in Vienna, Austria. It will be the second
symposium in this series and the objective is to link processing and materials studies to devices
and technological applications. The symposium will cover a wide range of topics related to
broadly understood science and technology of organic/polymeric semiconductor materials,
processes, devices and applications. The list of topics of interests includes, but is not limited to,
the following:

• Chemistry of organic semiconductors and its impact on material and device characteristics;
organic and polymer semiconductors
• Physical phenomena underlying operation of organic/polymeric semiconductor devices
• Deposition methods: PVD, solution processing, printing and others
• Substrates: conductive and non-conductive, mechanically rigid and flexible
• Electronic devices: TFTs; ohmic contacts, dielectric-organic semiconductor material systems,
charge transport, modeling
• Photonic devices: light emitting diodes and solar cells
• Display and lighting applications
• Patterning of organic semiconductors to create desired device geometries
• Large area organic semiconductor electronics and photonics; roll-to-roll processing
• Reliability, stability, reproducibility of device characteristics

a one-page abstract must be
submitted electronically to ECS by 24 April 2009. A copy of the abstract must also be submitted
to the lead symposium organizer Prof. Jamal Deen, and be accompanied by a cover letter with full
contact details of the presenting author. This abstract should clearly indicate the purpose of the
work, the approach, the manner and the degree to which the work advances the field, and specific
results and their significance. All submitted abstracts will be peer-reviewed. Instructions for
preparing ECS meeting abstract and other relevant information are available on the ECS World
Wide Web Home Page at Any additional information can be
obtained from the symposium organizers listed below.

M. Jamal Deen, McMaster University, Electrical and Computer Engineering Department (CRL 226), 1280
Main Street West Hamilton, ON L8S 4K1, Canada. Tel: (905) 525-9140 ext. 27137, Fax: (905) 523 4407,

David Gundlach, National Institute of Standards and Technology , Semiconductor Electronics Division
(Bldg. 225, Room A369, M.S. 8120), 100 Bureau Drive, Gaithersburg, MD 20899-8120 USA. Tel: (301)
975-2048; Fax: (301) 975-8069,

Benjamin Iñiguez, Department of Electronic Engineering, Universitat Rovira i Virgili, Avda. Països Catalans, 26, 43007 Tarragona-Spain. Tel: +34 977 558 521, Fax: +34977559605, Email:

Hagen Klauk, Max Planck Institute for Solid State Research, Heisenbergstr. 1, 70569 Stuttgart, Germany.
Tel: +49 711 689-1401; Fax: +49 711 689-1472; E-mail:

Wednesday, April 15, 2009


The main target of the IEEE East-West Design & Test Symposium (EWDTS 2009) is to exchange experiences between the scientists and technologies of the Eastern and Western Europe, as well as North America and other parts of the world, in the field of design, design automation and test of electronic systems. The symposium aims at attracting scientists especially from countries around the Black Sea, the Baltic states and Central Asia.

Symposium Deadlines:
  • Submission deadline: May 30th, 2009
  • Notification of acceptance: August 1st, 2009
Please go to to submit your paper.

Tuesday, April 14, 2009

Olympics of semiconductors

"Olympics of semiconductors!" ISSCC 2009 was held in San Francisco, California from Feb 8 to 12, 2009 with more papers form Asia.

(source: Nikkei Electronics Asia -- April 2009)

“Living with Variability” - Are You Ready?

  • How to understand and manage variability impact at 45nm and below?
  • What impact does variability have on interfacing the Foundry?
  • How will the industry characterise and model variability?
answers: Living with Variability: 12th & 13th May 2009. Savoy Place, London

Sunday, April 12, 2009

36th Birthday Party for SPICE

SPICE (“Simulation Program with Integrated Circuit Emphasis”) was announced to the world on April 12, 1973. So, in honor of SPICE’s thirty-sixth “birthday”, here is a link to the first of several interactive posts about how SPICE works:

Saturday, April 11, 2009

MOS-AK/GSA Frankfurt(O) meeting on-line publications

MOS-AK/GSA Frankfurt(O) meeting on-line publications are available:

Together with the IHP Team we have also issued the press release:
"Europäische Experten beraten zu konkreten Problemen der Beschreibung von
CMOS Bauelementen "
(an English version will be available soon)

in the meantime, read info about coming modeling events:
* Munich: June 2-3,
* Warsaw: June 22-24,
* Lodz: June 25-27,
* Athens: Sept. 18,

The Global MOS-AK/GSA CM Working Group Committee:
North America: Pekka Ojala, Exar Corporation
South America: Gilson I Wirth; UFRGS; Brazil
Europe: Ehrenfried Seebacher, austriamicrosystems AG
Asia/Pacific: Al Kordesch, Silterra Malaysia

Wednesday, April 8, 2009

April 14, 2009: ESSDERC/ESSCIRC submission deadlines

ESSDERC/ESSCIRC submission deadlines have been moved to April 14, 2009!

Visit the conference web site:


Following a successful 'fringe' event during last Conference in Edinburgh, ESSCIRC and ESSDERC will be holding also a "fringe" event in addition to the main conference in Athens. The Fringe forum is ideally suited for the submissions of recent progress which may, in some cases, not be ready for a full paper submission. The emphasis of fringe submissions should be on the presentation of the latest data (both measurement and/or simulation) and new ideas. This forum provides the opportunity to network with the ESSDERC/CIRC community to discuss these ideas and latest results. Reviewing will be undertaken by a sub-committee under the main Technical Programme committee, and a separate proceedings will be published on CD for this event. To attract the latest results, submissions close at the later date of 12 June 2009. Submissions will be in the form of abstracts of one page of text and two pages of figures. Submission will be via the website fridge section, where further details can be found.

After MOS-AK at IHP in Frankfurt(O)

Arbeitskreis „MOS-Modelle und Parameterextraktion“ tagt im IHP. Europäische Experten beraten zu konkreten Problemen der Beschreibung von CMOS Bauelementen