Tuesday, August 31, 2010
Monday, August 30, 2010
Date: Sept 14th, 2010
Location: National Semiconductor, Building E1, Conference Center, 2900 Semiconductor Drive, Santa Clara , CA 95051 .
Web link: http://www.ewh.ieee.org/r6/scv/eds/
Wednesday, August 18, 2010
 L. Chua, “Memristor: The missing circuit element,” IEEE Trans. Circuit Theory, vol. 18, no. 5, pp. 507–519, Sep. 1971.
 D. B. Strukov, G. S. Snider, D. R. Stewart, and S. R. Williams, “The missing memristor found,” Nature, vol. 453, no. 7191, pp. 80–83, May 2008.
 H.H. Li and M. Hu, "Compact Model of Memristors and Its Application in Computing Systems," DATE, 2010.
 Á. Rak and G. Cserey, "Macromodeling of the Memristor in SPICE," IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 29, 2010, pp. 632-636.
 D. Batas and H. Fiedler, "A Memristor Spice Implementation and a New Approach for Magnetic Flux Controlled Memristor Modeling," IEEE Transactions on Nanotechnology, 2010, pp. 1-1.
 "Modeling the HP memristor with SPICE," http://www.neurdon.com/2010/07/23/modeling-the-hp-memristor-with-spice/, 2010.
Tuesday, August 17, 2010
'An ingenious way of making a P-N-P-N or an N-P-N-P semiconductor device which avoids the difficulty of the heat treatment of the second junction adversely affecting the first formed junction is described in Patent No. 844970, filed by British Thomson-Houston Co.'
The note continues:
'What is done is to form a first P-N junction by alloying semiconductor germanium of N type with semiconductor silicon of P type, the second junction being subsequently made by fusing indium to the germanium.'
The note ends:
'The second junction is made at a lower temperature than the first so that the first junction is unharmed.'
Posted by David Manners on August 17, 2010; TrackBack URL for this entry:
Friday, August 13, 2010
March 14-18, 2011; Grenoble, France
- Sept. 5, 2010: Papers, Special Sessions, Tutorials, Workshops
- Oct. 10, 2010: Exhibition Theatre
- Nov. 12, 2010: PhD Forum
- Jan. 14, 2011: University Booth
Download/View the CfP as PDF
Complete DATE 2011 information is available
Tuesday, August 10, 2010
I am looking for one or two candidates to work in my research group at the Universitat Rovira i Virgili (Tarragona, Spain) in the field of compact modeling of advanced semiconductor devices. Therefore, I would like to receive CVs from potential applicants. Once I have selected the candidates, we will make the application.The candidates must have a Ph D in Electrical Engineering, Electronic Engineering, Physics or Telecommunication Engineering.
There are two open Calls: the one forIntra-European Fellowships and the one for International Incoming Fellowships. Therefore, candidates from European countries can apply for an Intra European Fellowship and candidates from outside Europe can apply for an International Incoming Fellowship.These felowships can be for one or two years. Salaries are extremely good and the prestige of having this type of fellowship is very high. For this reason, there is a tough competition to get these fellowships.I am looking for candidates for these Marie Curie Grants, both from Europe and outside Europe. Candidates must have a good CV (preferably with more than 4 publications in international journals, in order to have chances).
In order to fit the Marie Curie requirements, their age should be below 35.
If successful, the postdoctoral researchers will work on the characterization of compact modeling of any of the advanced semiconductor devices targeted by our research European projects: nanoscale MOSFETs, SOI and Multi-Gate MOSFETs, strained-Si/SiGe MOSFETs, Schottky-Barrier MOSFETs, nanowire FETs, III-V HEMTs and organic TFTs.The specific device/s in which the postdoctoral researcher will work will depend on his/her preference and background.
Candidates must send me by e-mail (to firstname.lastname@example.org) a CV or resume by AUGUST 14. Successful applicants will be informed by August 15, and then we will start to make the application. The successful candidates will be informed on the steps to do.
Tarragona is a small city (110000 inhabitants) on the Mediterranean coast, about 100 Km south from Barcelona, and very well connected to Barcelona and the main Spanish cities by rail and highway. Tarragona is a very old city, very important during the Roman Empire, and with a lot of historical landmarks.The quality of life in Tarragona is excellent. Mediterranean and mild climate the whole year. Wonderful beaches around the city (even at the city). Mountains close to the city (even the Pyrenees are not far). Besides, the city is very quiet, but with an intense nightlife.
My research group in the Department of Electronic Engineering, Universitat Rovira i Virgili (URV) is one of the strongest groups in compact modeling in Europe. We are leading one European project on compact modeling (in which a total of 15 European universities and companies participate). We also participate on two other European projects (one about nanoscale MOSFETs and another one about organic Thin Film Transistors). I am looking forward to receiving excellent applications!
Department of Electronic EngineeringTarragona,
Universitat Rovira i Virgili (URV)
Sunday, August 8, 2010
final workshop program:
* Venue and Recommended Hotels:
Sept.17, 2010 Barceló Renacimiento Hotel Seville
Your might also note that, it will have a series of important compact
modeling (CM) events is Spain:
- Sept. 9-10: CMC Q3 Meeting with the COMON project presentation
- Sept. 13: ESSDERC CM tutorial
- Sept. 16: ESSDERC CM session with the regular conference papers
- Sept. 16: COMON CM Project Meeting
- Sept. 17: MOS-AK/GSA CM Workshop
Monday, August 2, 2010
The duration of the grant will be for four years. The monthly salary will be about 1000 Euro/month. The position will start in January 2011.
The candidate should have a Bachelor or Master degree in Electrical Engineering, Electronic Engineering, Telecommunication Engineering or Physics. A good background in Semiconductor Physics, Semiconductor Devices, or Integrated Circuit Design will be highly appreciated.
The work to be done by the candidate will be focused on the development of new techniques of characterization and modeling of novel advanced semiconductor devices, in particular nanoscale MOSFETs or III-V devices. It will be related to several European projects in which the hosting group participates, in particular the COmpact MOdelling Netwok (COMON), that is led by the hosting group (the so-called NEPHOS group)
The NEPHOS group at URV is one of the most powerful teams in Europe in the area of compact modeling of semiconductor devices.
Required documents for applicants
Applicants are required to send to the address specified below the following documents (in English or Spanish):
1) a full Curriculum Vitae (as complete as possible) with passport number
2) Copy of their diploma
3) copy of their passport
4) Academic certificate including their marks (it is important that the number of hours or credits of each subject appears). It is also very important that the document specifies what is the minimum mark for passing a given subject and what is the maximum mark that can be awarded.
Candidates are requested to send their documents by e-mail to:
Prof. Benjamin Iñiguez
Department of Electronic, Electrical and Automatic Control Engineering
Universitat Rovira i Virgili (URV)
Avinguda Països Catalans, 26
Tel: +34977558521 Fax:+34977559610
You can contact Prof. Benjamin Iñiguez (Benjamin.Iniguez@gmail.com) for more information