Devices That You Definitely Will (and Just Might) Use: Emerging Transistor Technologies for the Near-and Long-Term

 WEDNESDAY June 04, 4:00pm - 6:00pm | Room 302 

 TRACK: EDA

 TOPIC AREA: EMERGING TECHNOLOGIES

 SPECIAL DAC SESSION 63: Devices That You Definitely Will (and Just Might) Use: Emerging Transistor Technologies for the Near-and Long-Term

Chair:  Michael Niemier; Univ. of Notre Dame, IN
Organizers:  Michael Niemier; Univ. of Notre Dame, IN
Xiaobo Sharon Hu; Univ. of Notre Dame, IN

Want to learn about the latest developments in FinFET-based processor design? What other transistor technologies might follow FinFETs and would they bring new design and modeling challenges? Come to this session to hear about both near- and long-term transistor technologies and their prospects for continuing Moore’s Law-based performance scaling trends. The session will begin with a discussion of FinFET technology; subsequent presentations will discuss tunnel transistors (TFETs) as well as other emerging FET technologies that could reenable voltage scaling. The session will conclude with a discussion of modeling efforts that consider the impact of new device technologies on von Neumann architectures as well as hybrid analog/digital circuits and architectures.

63.1 FinFET's and Their Implications for Design Now and in the Future

• Speaker: Rob Aitken; ARM Ltd., San Jose, CA
  Greg Yeric; ARM Ltd., Austin, TX
  Brian Cline; ARM Ltd., Austin, TX
  Lucian Shifren; ARM Ltd., San Jose, CA

63.2 Emerging Devices for Logic: Can a Low-Power Switch Be Fast?

• Speaker: Thomas Theis; IBM T.J. Watson Research Center, Yorktown Heights, NY

63.3 Energy Efficient Tunnel-FET Transistors for Beyond CMOS Logic

• Speaker: Uygar Avci; Intel Corp., Portland, OR
  Daniel Morris; Intel Corp., Portland, OR
  Ian Young; Intel Corp., Hillsboro, OR

63.4 Steep Slope Devices: Enabling New Architectural Paradigms

• Speaker: Vijaykrishnan Narayanan; Pennsylvania State Univ., State College, PA
  Karthik Swaminathan; Pennsylvania State Univ., State College, PA
  Huichu Liu; Pennsylvania State Univ., State College, PA
  Moon Seok Kim; Pennsylvania State Univ., State College, PA
  Xueqing Li; Pennsylvania State Univ., State College, PA
  Jack Sampson; Pennsylvania State Univ., University Park, PA

[more about the DAC Conference]

[mos-ak] [on-line publications] Spring MOS-AK Workshop in London

  

Recent, Spring MOS-AK Workshop at the London Metropolitan University was organized to discuss SPICE/compact modeling and its standardization with following Qucs GPL circuit simulation tutorial. The workshop's presentations are available on-line at <http://www.mos-ak.org/london_2014/>.

   

Please also distribute further information about next MOS-AK related events among all who are interested in the SPICE/compact modeling and its Verilog-A standardization:

• 3rd International Training Course on Compact Modelling (TCCM) Lublin (PL) June 18, 2014
• http://compactmodelling.eu/tccm3_about.php
• MIXDES Special Compact Modeling Session, Lublin (PL) June 19-21, 2014
• http://www.mixdes.org/Mixdes3/tekst/view/special
• 12th MOS-AK ESSDERC/ESSCIRC Workshop, Venice (I) Sept. 26, 2014
• http://www.mos-ak.org/venice_2014/
• 7th International MOS-AK Workshop San Francisco (US) Dec. 2014
• http://www.mos-ak.org/

Already now, I am looking forward to meet you at one of our MOS-AK modeling events, soon.

-- with regards - wladek for the Extended MOS-AK/GSA Committee;

--

Arbeitskreis Modellierung von Systemen und Parameterextraktion 

Modeling of Systems and Parameter Extraction Working Group

--

Over two decades of Enabling Compact Modeling R&D Exchange

--

http://www.mos-ak.org

-- 

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i-MOS version 201404 release

The i-MOS Team has announced  new release of the interactive Modeling and On-line Simulation
Platform (i-MOS), version 201404. In this release, there are several new services listed as follows:

• Integrating the model benchmark testing suites in Model page
• Including first three benchmark tests for model evaluations
• Constructing the Developer page for device model submissions
• Implementing one industry standard MOSFET model HiSIM2
• Uploading presentation files from IWCM 2014 for your references

For more details, please visit the i-MOS website.

ESSDERC/ESSCIRC 2014 - Paper submission deadline extension

the Organizing Committee decided to extend the paper submission deadline of the 44th ESSDERC and 40th ESSCIRC to:

April 16th, 2014 23:59 (GMT - 07:00 am)

This is a hard deadline and no further extensions will be granted. After the deadline is elapsed, further paper submissions will not be accepted. The notification of paper acceptance, May 27, 2014, has not changed. Detailed information about the conferences is provided at the ESSCIRC/ESSDERC 2014 website.

[read more...]

VI Regional Seminar MNE & MS 2014

VI Regional Seminar on Computer Modeling and Designing in Micro- and Nanoelectronics and in Microelectromechanical Systems (MNE & MS 2014),

Orel, Russia, March 28 2014

1. С.И. Матюхин¹, Welcome and Seminar Openning,
   ¹Госуниверситет-УНПК
2. Турин В.О.¹, Кильчицкая М.В.², Герасимов К.А.², Simulation of power bipolar transistor,
   ¹Госуниверситет-УНПК, ²БГТУ, г. Брянск
3. Ващенко В.А., The physical ESD design for integrated circuits and electronic devices,
   Maxim Integrated Corp., г. Сан Хосе, Калифорния, США
4. Цырлов А.М., Development of CMOS optocoupler,
   ОАО «Протон», г. Орёл
5. Студенников А.С., Development of CMOS ICs,
   ОАО «Протон», г. Орёл
6. Малый Д.О.¹, Матюхин С.И.², Ставцев А.В.¹, "Proton-Elektroteks" IGBT-devices JSC: basic approaches of production and quality assurance,
   ¹ЗАО «Протон-Электротекс», г. Орёл, ²Госуниверситет-УНПК
7. Макулевский Г.Р., Матюхин С.И., Current-voltage characteristics of laser diodes based on AlGaAs,
   Госуниверситет-УНПК
8. Матюхин С.И., Гришин В.О., Radiation effects of on the current-voltage characteristic of power diodes and thyristors,
   Госуниверситет-УНПК
9. Писарев А.А.¹, Матюхин С.И.², Сурма А.М.¹, Черников А.А.¹, Electrical characteristics of fast diodes with soft recovery,
   ¹ЗАО «Протон-Электротекс», г. Орёл, ²Госуниверситет-УНПК
10. Koziol Z., Aestimo quantum mechanical software for modeling quantum wells in nanoelectronics,
    TU Rzeszow, Polska

The ITRS, 2013 Edition is now online.

 The link below will take you to the site for the summary information
http://www.itrs.net/Links/2013ITRS/Summary2013.htm

 For the full edition details, follow this link
http://www.itrs.net/Links/2013ITRS/Home2013.htm

[read more...]

Possible VTH Variation Sources

with 16 nm FinFET devices, the nature of the VTH variation changes.  On planar CMOS, random dopant fluctuations (RDFs) had the biggest influence. 

Possible VTH Variations

Ideal FinFETs have no doping, and therefore no RDFs.  However, this only works for low voltage operation.  We also need high-speed devices, which requires multiple threshold voltages (Vth's).  For FinFETs, this requires doping leading to RDF variation.  

[read more at DeepChip ...]