Thursday, 25 August 2016

#Write beautiful #LaTeX #papers in an easy way. https://t.co/7HkkbDED7f


from Twitter https://twitter.com/wladek60

August 25, 2016 at 10:56AM
via IFTTT

Wednesday, 24 August 2016

#Analog #DNA #circuit does math in a test tube https://t.co/iNOWaqkBMO #tech #feedly #papers


from Twitter https://twitter.com/wladek60

August 24, 2016 at 08:46PM
via IFTTT

2-D Threshold Voltage Model for the Double-Gate p-n-p-n TFET With Localized Charges https://t.co/oyhQhOSEzQ #papers #feedly


from Twitter https://twitter.com/wladek60

August 24, 2016 at 12:39PM
via IFTTT

Friday, 19 August 2016

Books You Should Read: Basic Electronics https://t.co/igihHzx3XQ #papers


from Twitter https://twitter.com/wladek60

August 19, 2016 at 09:37PM
via IFTTT

Thursday, 18 August 2016

ECSCRM 2016 Tutorial Day Announcement

ECSCRM 2016
Announcement of Tutorial Day
Sept.25, 2016, Halkidiki, GREECE

The 11th European Conference on Silicon Carbide and Related Materials (ECSCRM) will be held on Sept. 25-29 in Halkidiki, Greece

Early Registration: August 20, 2016
Late Abstract Submission: August 23, 2016
Please see the conference websitehttp://ecscrm2016.org/

We are very happy to announce that a SiC MOSFET Tutorial Day is planned for Sunday, Sept.25, as a satellite event of ECSCRM 2016:

Tutorial Day Title: Learn how to develop your SiC MOSFET
in one day!

The main objective of the Tutorial is to introduce the audience to what is arguably the hottest topic in SiC devices: the technology of SiC MOSFETs. The Tutorial is primarily intended for PhD students working on SiC and possessing a solid technical background in semiconductor devices, as well as for semiconductor technology professionals who want to better familiarize themselves in this subject. Its concept/setup is to deliver all key information that will allow the audience to understand most of the content of any paper dedicated to SiC MOSFETs. The topics to be presented and the corresponding speakers are:
  1. Material for SiC MOSFET fabrication (bulk/epitaxial growth, selection criteria, defects, screening methods)
    Prof. T. Kimoto (Kyoto University, Japan)
  2. Physics and technology of SiO2/SiC interface
    Dr. Kevin Matocha (Monolith, USA)
  3. Other MOSFET processing (ohmic contacts, implantation, passivation, specific issues related to device geometry,…)
    Dr. Victor Veliadis (PowerAmerica/NCSU, USA)
  4. SiC MOSFET device physics and design (operation principles, charge model, TCAD simulation)
    Prof. J. Cooper (Purdue University, USA)
  5. SiC MOSFET electrical static and dynamic characterization, electrical stresses, device reliability
    Prof. A. Castellazzi (Nottingham University, UK)
  6. SiC MOSFET as circuit components – targeted applications
    Dr. Ljubisa Stevanovic (GE, USA)
  7. Summarizing remarks (evolution of SiC MOSFETs – main open points)
    (under confirmation)
Please note there is separate registration to attend the tutorial. The registration fee is €60 for ECSCRM 2016 participants, and €200 for non-participants. The registration fee for students* is €60, regardless of ECSCRM 2016 registration. The fee covers lectures, tutorial materials, as well as lunch and coffee breaks on tutorial day.

The organizing committee of ECSCRM 2016 Tutorial Day
  • Matthias Bucher (Technical University of Crete, TUC, Greece)
  • Peter Friedrichs (Infineon, Germany)
  • Konstantin Vasilevskiy (Newcastle University, UK)
  • Konstantinos Zekentes (FORTH, Greece)
* Student status will be recognized only to PhD and Master students. Post-docs are kindly requested to register as regular participants. Students must provide evidence of their status by sending a student certificate or a copy of a valid student ID to the conference secretariat upon registration.

--
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at https://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/d/optout.

Monday, 15 August 2016

History Of The Diode https://t.co/fHiuWidp8o #todo #feedly #papers


from Twitter https://twitter.com/wladek60

August 15, 2016 at 11:56PM
via IFTTT

Effect of gate-length downscaling on the analog/RF and linearity performance of InAs NW TFET https://t.co/If4CzeK8uI #papers #feedly


from Twitter https://twitter.com/wladek60

August 15, 2016 at 11:45AM
via IFTTT