Tuesday, September 3, 2019

The Institute of Nuclear Physics of the Polish Academy of Sciences (IFJ PAN) has developed a model that reveals the nature of crystal defects in silicon carbide (SiC). https://t.co/iY2ZkKIxYG #paper https://t.co/VsWkm0hlxz


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September 03, 2019 at 08:32PM
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Innovative Strategy for Mixer Design Optimization Based on gm/ID Methodology by Giovanni Piccinni, Claudio Talarico, Gianfranco Avitabile and Giuseppe Coviello; Electronics 2019, 8(9), 954; https://t.co/7pjaB0dIt4 https://t.co/1RYwhJfuX9 #paper https://t.co/Y8ftswEgDc


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September 03, 2019 at 04:21PM
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Article reached 1,000 reads

A. Bazigos, M. Bucher, J. Assenmacher, S. Decker, W. Grabinski and Y. Papananos
An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs
IEEE Transactions on Electron Devices,
vol. 58, no. 11, pp. 3751-3758, Nov. 2011.
doi: 10.1109/TED.2011.2164080
Abstract:
The constant-current (CC) method uses a current criterion to determine the threshold voltage (VTH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the same current criterion in both saturation and linear modes leads to inconsistent results and incorrect interpretation of effects, such as drain-induced barrier lowering in advanced CMOS halo-implanted devices. The generalized adjusted CC method is based on the theory of the charge-based MOS transistor model. It introduces an adjusted current criterion, depending on VDS , allowing to coherently determine VTH for the entire range of VDS from linear operation to saturation. The method uses commonly available ID versus VG data with focus on moderate inversion. The method is validated with respect to the ideal surface potential model, and its suitability is demonstrated with technology-computer-aided-design data from a 65nm CMOS technology and measured data from a 90nm CMOS technology. Comparison with other widely used threshold voltage extraction methods is provided.

Monday, September 2, 2019

G. Darbandy et al., "Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors," 26th MIXDES, Rzeszów, Poland, 2019, pp. 76-80. https://t.co/nQs9W9PDJM #paper https://t.co/ROmbZzT1Wi


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September 02, 2019 at 02:45PM
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#IEDM 2019 to Highlight Innovative #Devices for an Era of Connected #Intelligence - Semiwiki https://t.co/TBlZTJtI6g #paper https://t.co/iDwVRos2mw


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September 02, 2019 at 09:40AM
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Friday, August 30, 2019

G. Hills et al., “Modern microprocessor built from complementary carbon nanotube transistors,” Nature, vol. 572, no. 7771, pp. 595–602, Aug. 2019 https://t.co/pivFGNURgH #paper https://t.co/1FjBr7mNsL


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August 30, 2019 at 11:40AM
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Thursday, August 29, 2019