Call for Papers
For the Special Issue of
IEEE Transactions on Electron Devices
Advanced Modeling of Power Devices and Their Applications
The special issue on "Advanced Modeling of Power Devices and Their Applications" is devoted to the research and development activities on power devices, the correlation of modeling approaches to the physics of power devices and in particular on emerging models of advanced power devices for power circuit applications.
The importance of accurate circuit design with power devices is increasing according to the necessity of realizing efficient energy consumption. High-voltage MOSFETs are also utilized in all kinds of consumer electronics, and electric vehicles are controlled by IGBT circuit, where an urgent task is to achieve better energy control at about 1 kV bias condition. Accurate and even predictable models based on a close correlation to the important physical effects occurring in such power devices are therefore highly desired for precise circuit design. Presently many investigations are also undertaken intensively for new materials such as SiC and GaN replacing Silicon for extremely high voltage applications e.g. beyond 10 kV. A good understanding of the device operation under such extremely high bias conditions requires a lot physical analysis, and as a result leads to more effective utilization of these power devices. Together with the strong self-heating effect, the dynamically changing resistivity makes convergence in circuit simulation unstable. Techniques and physical analysis to overcome such problems are also urgently requested.
Due to the wide range of covered bias conditions and the large variety of device structures applied, a lack of communication occurs in the high-voltage community even though the basic tasks are the same. Therefore, the objective of this special issue is to bring together a diversity of R&D activities and advancements in the physical analysis and modeling of MOS-based power devices and other types of emerging power devices including Bipolar, Thyristor and Diode. Models for active and passive components integrated in advanced silicon as well as new material technologies, statistical modeling and mixed-mode simulation are also of special interest.
The requirements for modeling high-voltage devices on the part of the circuit design community are now much more demanding due to urgent necessity to reduce energy consumption, where the high-voltage devices play an important role. Submissions should address advances in device characterization, physical models, as well as applications preferably but not limited to the following areas:
1. Compact modeling of power devices such as high-voltage MOSFETs, Bipolar, Thyristor and IGBT forcircuit applications from a few volts up to beyond 10kV.2. Modeling of passive elements such as Diode, Inductor, Resistor.3. Investigations on new material such as SiC and GaN and their applications.4. Circuit simulation for real applications of power devices together.5. Investigation for computation efficiency for circuit simulation
Please submit manuscript by using the following:
MAKE SURE TO MENTION THE SPECIAL ISSUE IN THE COVER LETTER
Paper Submission Deadline: July 15, 2012Scheduled Publication Date: February, 2013
Mitiko Miura-Mattausch, Hiroshima University, firstname.lastname@example.orgNarain Arora, Silterra Malaysia, email@example.comEhrenfried Seebacher, Austriamicrosystems AG, firstname.lastname@example.orgSamar K. Saha, SuVolta, Inc., email@example.com
If you have any questions about submitting a manuscript, please contact:
IEEE EDS Publications Office
445 Hoes Lane Piscataway NJ 08854
Phone: +1 732 562 6855 Fax: +1 732 562 6831
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To view this discussion on the web visit https://groups.google.com/d/msg/mos-ak/-/t4n53eOMNhYJ.
To post to this group, send email to firstname.lastname@example.org.
To unsubscribe from this group, send email to email@example.com.
For more options, visit this group at http://groups.google.com/group/mos-ak?hl=en.