Nov 18, 2015

[mos-ak] [Final Program] 8th International MOS-AK Workshop Washington DC December 9, 2015

 8th International MOS-AK Workshop 
  Washington DC December 9, 2015 
  The Final MOS-AK Workshop Program
Together with the MOS-AK Workshop Scientific Program Coordinators Larry Nagel and Andrei Vladimirescu, as well as Extended MOS-AK TPC Committee, we have pleasure to invite to the MOS-AK Workshop which will be held in Washington DC in the IEDM / CMC meetings timeframe on December 9, 2015. The MOS-AK workshop is organized with aims to strengthen an academic/industry network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Embassy of Switzerland
2900 Cathedral Ave, NW,  
Washington, DC 20008 

Free Online Workshop Registration:

Workshop Agenda:
  • MOS-AK Workshop - Dec, 9, 2015
  • Online Technical Program
    • 08:30 - 09:00 - On-site Registration 
    • 09:00 - 12:30 - Morning MOS-AK Session
      • TCAD and Advanced CMOS Technologies
      • Compact Modeling and Reliability Co-simulation
    • 12:30 - 13:30 - Lunch
    • 13:30 - 17:00 - Afternoon MOS-AK Session 
      • CMC Compact Model Standardization
      • FOSS Tools for Compact Model Verilog-A Standardization
    • 17:00 End of the workshop
Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)

Extended MOS-AK Committee


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Nov 11, 2015

[ESSCIRC 2015] Low-power analog RF circuit design based on the inversion coefficient

[ref] Enz, Christian; Chalkiadaki, Maria-Anna; Mangla, Anurag, "Low-power analog/RF circuit design based on the inversion coefficient," in ESSCIRC 2015 - 41st , vol., no., pp.202-208, 14-18 Sept. 2015

Abstract: This paper discusses the concept of the inversion coefficient as an essential design parameter that spans the entire range of operating points from weak via moderate to strong inversion, including velocity saturation. Several figures-of-merit based on the inversion coefficient, especially suitable for the design of low-power analog and RF circuits, are presented. These figures-of-merit incorporate the various trade-offs encountered in analog and RF circuit design. The use of the inversion coefficient and the derived figures-of-merit for optimization and design is demonstrated through simple examples. Finally, the simplicity of the inversion coefficient based analytical models is emphasized by their favorable comparison against measurements of a commercial 40-nm bulk CMOS process as well as with simulations using the BSIM6 model.

Keywords: Analytical models, Integrated circuits, Noise, Radio frequency, Silicon, Transconductance, Transistors, BSIM6

URL / doi: 10.1109/ESSCIRC.2015.7313863