[paper] SiC Power MOSFET SPICE modelling

Akbar Ghulam

Accurate & Complete behaviourial SPICE modelling 

of commercial SiC Power MOSFET OF 1200V, 75A

25th EuroSimE, Catania, Italy, 2024, pp. 1-4,

DOI: 10.1109/EuroSimE60745.2024.10491420

* UNIPA Palermo (IT)

Abstract: Silicon Carbide (SiC) is proved to be an excellent replacement for Silicon in high voltage and high frequency applications due to its electro-thermal properties. Since SiC power MOSFETs have only recently been more widely available commercially, accurate simulation models are immediately required to forecast device behavior and facilitate circuit designs. The goal of this paper is to develop an accurate LTSPICE model based on a modified Enz-Krumenacher-Vittoz (EKV), MOSFET model for a 1200V, 30mΩ & 75ASiC power MOSFET “SCTW100N120G2AG” provided by STMicroelectronics that is currently on the market. The modified EKV model outperforms the reduced quadratic model by describing MOSFET behavior over different zones which are weak, moderate, and strong inversion zones with only a single equation. A wide range of experimental data was used to build the model's parameters. To estimate device performance in high frequency switching applications, the model has been expanded to include package parasitic components that include parasitic capacitances. The model's static and transient properties were simulated, and the results were compared with those acquired from the actual device.

FIG: The SiC MOSFET's circuit schematic utilizing a modified EKV model

Acknowledgements: We would like to thank STMicroelectronics, as for completion of this study has been greatly aided by their participation and availability of relevant data.

[paper] Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

C. Jin, T. Saraya, T. Hiramoto and M. Kobayashi,

in IEEE J-EDS, vol. 8, pp. 429-434, 2020

doi: 10.1109/JEDS.2020.2986345

Abstract - We have investigated transient IdVg and IdVd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with polarization reversal and depolarization effect can result in sub-60mV/dec subthreshold swing (SS), reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region of the S-shaped polarization-voltage (PV) predicted by single-domain Landau theory. Moreover, the mechanisms of R-DIBL and NDR based on the TNC theory are discussed in detail. The results demonstrated in this work can be a possible explanation for the mechanism of previously reported negative capacitance field-effect transistor (NCFET) with sub-60mV/dec SS, R-DIBL, and NDR.

Equivalent circuits of a ferroelectric capacitor in both static and transient conditions.