[paper] TMD FETs

Ahmed Mounir^a, Benjamin Iñiguez^a, François Lime^a, Alexander Kloes^b

Theresia Knobloch^c, Tibor Grasser^c

Compact I-V model for back-gated and double-gated TMD FETs

Solid-State Electronics (2023): 108702

DOI: 10.1016/j.sse.2023.108702

a Rovira I Virgili University, Tarragona, Spain
b University of Applied Sciences, Giessen, Germany
c TU Wien, Vienna, Austria

Abstract: A physics-based analytical DC compact model for double and single gate TMD FETs is presented. The model is developed by calculating the charge density inside the 2D layer which is expressed in terms of the Lambert W function that recently has become the standard in SPICE simulators. The current is then calculated in terms of the charge densities at the drain and source ends of the channel. We validate our model against measurement data for different device structures. A superlinear current increase above certain gate voltage has been observed in some MoS2 FET devices, where we present a new mobility model to account for the observed phenomena. Despite the simplicity of the model, it shows very good agreement with the experimental data.

Fig : 2D schematic structure for 2D TMD FETs: (a) a double gated monolayer MoS2 FET. 

(b) a double gated monolayer WSe2 FET. (c)  single back-gated multilayer MoS2 FET. 

(d) single back-gated monolayer FET.

[paper] Compact Modeling of pH-Sensitive FETs Based on 2D Semiconductors

Tarek El Grour, Francisco Pasadas, Alberto Medina-Rull, Montassar Najari, Enrique G. Marin, Alejandro Toral-Lopez, Francisco G. Ruiz, Andrés Godoy, David Jiménez and Lassaad El-Mir

Compact Modeling of pH-Sensitive FETs Based on Two-Dimensional Semiconductors

arXiv:2109.06585 [physics.app-ph; submitted on 14 Sep 2021]

DOI: 10.1109/TED.2021.3112407

   

LAPHYMNE Laboratory, Gabes University, Gabes, Tunisia

PEARL Laboratory, Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Spain

The Innovation and Entrepreneurship Centre, Jazan University, Jazan, Saudi Arabia.

Departament d’Enginyeria Electrònica, Escola d’Enginyeria, Universitat Autònoma de Barcelona, Spain

Abstract: We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson equation including the Site-Binding model and the Gouy-Chapman-Stern approach, while the carrier transport is described by the drift-diffusion theory. The proposed model is provided in an analytical form and then implemented in Verilog-A, making it compatible with standard technology computer-aided design tools employed for circuit simulation. The model is benchmarked against two experimental transition-metal-dichalcogenide (MoS2 and ReS2) based ion sensors, showing excellent agreement when predicting the drain current, threshold voltage shift, and current/voltage sensitivity measurements for different pH concentrations.

Fig: a) Schematic depiction of a 2D-ISFET b) its quivalent capacitive circuit

Acknowledgments: This work is supported in part by the Spanish Government under the projects TEC2017-89955-P, RTI2018-097876-B-C21 and PID2020-116518GB-I00 (MCIU/AEI/FEDER, UE); the FEDER/Junta de Andalucía under project BRNM-375-UGR18; EC under Horizon 2020 projects WASP No. 825213 and GrapheneCore3 No. 881603. E.G. Marin gratefully acknowledges Juan de la Cierva Incorporación IJCI-2017-32297. A. Toral-Lopez acknowledges the FPU program (FPU16/04043). F. Pasadas acknowledges funding from PAIDI 2020 and Andalusian ESF OP 2014-2020 (20804). F. Pasadas and D. Jiménez also acknowledge the partial funding from the ERDF allocated to the Programa Operatiu FEDER de Catalunya 2014-2020, with the support of the Secretaria d’Universitats i Recerca of the Departament d’Empresa i Coneixement of the Generalitat de Catalunya for emerging technology clusters to carry out valorization and transfer of research results. Reference of the GraphCAT project: 001-P-001702.