Cambridge University Press; 31 Oct 2017; 342pp
Sep 12, 2017
[book] Systematic Design of Analog CMOS Circuits
Cambridge University Press; 31 Oct 2017; 342pp
Sep 11, 2017
Current state of the art in #modeling heating effects in nanoscale devices - Books - IOPscience https://t.co/E0UlkDDJVk
Current state of the art in #modeling heating effects in nanoscale devices - Books - IOPscience https://t.co/E0UlkDDJVk
— Wladek Grabinski (@wladek60) September 11, 2017
from Twitter https://twitter.com/wladek60
September 11, 2017 at 06:43PM
via IFTTT
Aug 31, 2017
#2D Semiconductor Process and Device Simulator #MicroTec: #modeling Development Status Update... https://t.co/OycWKSCKXj
#2D Semiconductor Process and Device Simulator #MicroTec: #modeling Development Status Update... https://t.co/OycWKSCKXj
— Wladek Grabinski (@wladek60) August 31, 2017
from Twitter https://twitter.com/wladek60
August 31, 2017 at 08:08AM
via IFTTT
#2D Semiconductor Process and Device Simulator #MicroTec: #modeling Development Status Update… https://t.co/fZy9zm34yX
#2D Semiconductor Process and Device Simulator #MicroTec: #modeling Development Status Update https://t.co/do3ZxocZ5z http://pic.twitter.com/h11HndXXX5
— Wladek Grabinski (@wladek60) August 31, 2017
from Twitter https://twitter.com/wladek60
August 31, 2017 at 08:08AM
via IFTTT
Aug 30, 2017
[paper] Surface Potential Equation for Low Effective Mass Channel Common Double-Gate MOSFET
Aug 29, 2017
levmar : Levenberg-Marquardt nonlinear least squares algorithms in C/C++
VALint: the NEEDS Verilog-A Checker
Aug 28, 2017
[paper] Nanoscale MOSFET Modeling
Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits
Aug 25, 2017
Physics-Based Multi-Bias RF Large-Signal GaN HEMT #Modeling and Parameter Extraction Flow - IEEE Xplore Document... https://t.co/tT8gOLBa9k
Physics-Based Multi-Bias RF Large-Signal GaN HEMT #Modeling and Parameter Extraction Flow - IEEE Xplore Document... https://t.co/tT8gOLBa9k
— Wladek Grabinski (@wladek60) August 25, 2017
from Twitter https://twitter.com/wladek60
August 25, 2017 at 11:37AM
via IFTTT
Physics-Based Multi-Bias RF Large-Signal GaN HEMT #Modeling and Parameter Extraction Flow - IEEE Xplore Document… https://t.co/xwC7X2oxYm
Physics-Based Multi-Bias RF Large-Signal GaN HEMT #Modeling and Parameter Extraction Flow - IEEE Xplore Document https://t.co/sds4WvM9TZ http://pic.twitter.com/EmSfD8SUZO
— Wladek Grabinski (@wladek60) August 25, 2017
from Twitter https://twitter.com/wladek60
August 25, 2017 at 11:37AM
via IFTTT
An Analytical #Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure - IEEE Xplore... https://t.co/Fe1Fqwu5BJ
An Analytical #Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure - IEEE Xplore... https://t.co/Fe1Fqwu5BJ
— Wladek Grabinski (@wladek60) August 25, 2017
from Twitter https://twitter.com/wladek60
August 25, 2017 at 11:39AM
via IFTTT
An Analytical #Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure - IEEE Xplore Documen… https://t.co/oeYfcvWNvI
An Analytical #Model for the Gate C–V Characteristics of UTB III—V-on-Insulator MIS Structure - IEEE Xplore Document https://t.co/W0W0Yhy0Ci http://pic.twitter.com/bWq1erxitj
— Wladek Grabinski (@wladek60) August 25, 2017
from Twitter https://twitter.com/wladek60
August 25, 2017 at 11:38AM
via IFTTT
Aug 23, 2017
Modeling and simulation of biological systems using SPICE language
doi: 10.1371/journal.pone.0182385
GeNeDA results from the collaboration between three laboratories:
The Laboratory of Engineering Sciences, Computer Sciences and Imaging, ICube, UMR7357, CNRS / Université de Strasbourg, France (Morgan MADEC, Yves GENDRAULT, Elise ROSATI and Christophe LALLEMENT)
The Laboratory of Therapeutic Innovation, LIT, UMR 7200, CNRS / Université de Strasbourg, France (Jacques HAIECH)
The Laboratory of Computer Sciences of Paris 6, LIP6, UMR7606, CNRS / Université Pierre et Marie Curie, Paris, France (François PECHEUX)
Relared papers has been published recently
[1] M. Madec, F. Pêcheux, Y. Gendrault, E. Rosati, C. Lallement and J. Haiech, "GeNeDA: An Open-Source Workflow for Design Automation of Gene Regulatory Networks Inspired from Microelectronics", Journal of Computational Biology, June 2016. doi:10.1089/cmb.2015.0229.
[2] M. Madec et al., "Reuse of Microelectronics Software for Gene Regulatory Networks Design Automation", 1st international conference of the GDB BioSynSys, Paris (FR), Sept. 2016.
[3] M. Madec et al., "EDA inspired Open-source Framework for Synthetic Biology", IEEE 2013 BioCAS Conference, Rotterdam (NL), Nov. 2013.
Germany’s RWTH Aachen University and AMO launch joint Aachen Graphene & 2D-Materials Center
- Prof. Christoph Stampfer, RWTH Aachen University (Spokesman)
- Prof. Max Lemme, RWTH Aachen University/AMO GmbH
- Prof. Markus Morgenstern , RWTH Aachen University
- Prof. Renato Negra, RWTH Aachen University
- Dr. Daniel Neumaier, AMO GmbH
Aug 19, 2017
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor - IEEE Xplore #paper https://t.co/jRvJS3MUTs
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor - IEEE Xplore #paper https://t.co/jRvJS3MUTs
— Wladek Grabinski (@wladek60) August 19, 2017
from Twitter https://twitter.com/wladek60
August 19, 2017 at 10:11AM
via IFTTT
Aug 18, 2017
A Threshold Voltage #Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects https://t.co/sEviQXJbB3
A Threshold Voltage #Model of Tri-Gate Junctionless Field-Effect Transistors Including Substrate Bias Effects https://t.co/sEviQXJbB3
— Wladek Grabinski (@wladek60) August 18, 2017
from Twitter https://twitter.com/wladek60
August 18, 2017 at 01:42PM
via IFTTT
[paper] Improvements to a compact MOSFET model for design by hand
Aug 17, 2017
[mos-ak] [Workshop Program] 15th MOS-AK ESSDERC/ESSCIRC Workshop in Leuven Sept.11 2017
(Parkstraat 45, 3000 Leuven)room AV 91.12
(any related inquiries can be sent to register@mos-ak.org)
Chair: Wladek Grabinski - MOS-AK; Cristell Maneux - U-Bordeaux;
Chair: Thierry Poiroux - CEA
Chair: Jean-Michel Sallese - EPFL; Daniel Tomaszewski - ITE;
Chair: Benjamin Iniguez - URV; Sadayuki Yoshitomi - Toshiba;
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at https://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/d/optout.
Aug 16, 2017
Review of commercial SiC MOSFET models: Topologies and equations - IEEE Xplore #paper https://t.co/LS090HojeE
Review of commercial SiC MOSFET models: Topologies and equations - IEEE Xplore #paper https://t.co/LS090HojeE
— Wladek Grabinski (@wladek60) August 16, 2017
from Twitter https://twitter.com/wladek60
August 16, 2017 at 11:22AM
via IFTTT
Aug 14, 2017
[paper] Compact Electro-Mechanical-Fluidic Model for Actuated Fluid Flow System
MECHANICAL DOMAINS ARE SUMMARIZED [21]-[23]
A General and Transformable #Model Platform for Emerging Multi-Gate MOSFETs - IEEE Xplore Document https://t.co/q27OgRX5Fd
A General and Transformable #Model Platform for Emerging Multi-Gate MOSFETs - IEEE Xplore Document https://t.co/q27OgRX5Fd
— Wladek Grabinski (@wladek60) August 14, 2017
from Twitter https://twitter.com/wladek60
August 14, 2017 at 02:01PM
via IFTTT
Mini-Colloquium (MQ) on Nanoelectronics
DATE: Saturday Aug. 26, 2016
Time | Topic | Speaker |
---|---|---|
9:00 - 9:15 | Inauguration | |
9:15 - 9:30 | High Tea | |
9:30 - 10:30 | Nanotransistors with 2D materials: Opportunities and Challenges | Prof. Navkanta Bhat IISc |
10:30 - 11:30 | Revisiting gate C-V characterization for high mobility semiconductor MOS devices | Prof. Anisul Haque East West Univ. |
11:30 - 11:45 | Tea | |
11:45 - 12:45 | Prof. V. Ramgopal Rao IIT Delhi | |
12:45 - 14:15 | Lunch | |
14:15 - 15:15 | ASM-HEMT - First Industry Standard Compact Model for GaN HEMTs | Prof. Yogesh Singh Chauhan IIT Kanpur |
15:15 - 16:15 | Spintronics - Perspectives and Challenges | Prof. Brajesh Kumar Kaushik IIT Roorkee |
16:15 - 16:30 | Tea | |
16:30 - 17:30 | Advanced Hetero structure based Nano Scale MOSFETs | Prof. Chandan Kumar Sarkar Jadavpur Univ. |
Website: http://www.iitk.ac.in/nanolab/MQ/index.html
Aug 7, 2017
ICCDCS 2017
Tenth International Caribbean Conference on Devices, Circuits and Systems (ICCDCS 2017)
08:00 to 9:00 | Registration | Registration | Registration |
08:45 to 9:00 | Opening Ceremony | ||
09:00 to 10:00 | Key Note 1: "Adaptive Heterogenous Multi-Core Technologies- Intelligent, Interconnected and Integrated Cyber-Physical Systems (I3CPS)", Jürgen Becker | Key Note 3: "The Life and Times of Eugeni García", Benjamín Íñiguez | Key Note 6: "On the Extraction Methods for MOSFET Series Resistance and Mobility Degradation using a Single Test Device",Adelmo Ortiz Conde |
10:00 to 10:30 | Break | Break | Break |
10:30 to 12:30 | Session 1 | Session 3 | Session 5 |
10:30 to 10:50 | "Model Based Photopic Electroretinogram Source Separation: A Multiresolution Analysis Approach", Prashanth Chetlur Adithya, Alaql Abdulrahman, Radouil Tzekov, Ravi Sankar and Wilfrido Moreno | "A Programmable CMOS Voltage Controlled Ring Oscillator for Radio-Frequency Diathermy On-chip Circuit", Antonio Corres- Matamoros, Esteban Martinez-Guerrero and Jose E. Rayas-Sanchez | "Health Index Assessment for Power Transformers with Thermal Upgraded Paper up to 230kV, Using Fuzzy Inference. Part II: A Sensibility Analysis", Diego Chacón, Juan Pablo Lata and Ricardo Medina |
10:50 to 11:10 | "Analytical Model Parameter Determination for Microwave On-Chip Inductors up to the Second Resonant Frequency", José Valdés Rayón, Reydezel Torres and Roberto Murphy | "A logarithmic CMOS image sensor with wide output voltage swing range", Fernando Campos, Mário Bordon, Marcelo Silva and Jacobus Swart | "Implementation Model Using a Hippocratic Protocol in Mobile Terminals with NFC Technology", Carlos Kowalevicz, Jose Pirrone Puma and Monica Huerta |
11:10 to 11:30 | "Energy Consumption Improvement based on Distance Adaptive Modulation in Optical Elastic Network", Sabi Bandiri, Rafael Braga, Tales Pimenta and Danilo Spadoti | "Improving Magnitude Response in Two-Stage Corrector Comb Structure", Gordana Jovanovic Dolecek and Lyda Herrera Sepulveda | "Internet of Things as an Attack Vector to Critical Infrastructures of Cities", Pablo Leonidas Gallegos-Segovia, Jack Fernando M. Larios-Rosillo and Erwin Jairo Sacoto-Cabrera |
11:30 to 11:50 | "Switching Region Analysis for SOTB Technology", Carlos Cortes Torres, Nobuyuki Yamasaki and Hideharu Amano | "Analysis of the influence of the buffer layer in the characteristic impedance of electro-optic modulators", Ana Gabriela Correa Mena, Luis Alejandro González Mondragón, Leidy Johana Quinteros Rodríguez, José Valdés Rayón and Ignacio Enrique Zaldívar Huerta | "Sensors for Parkinson's Disease Evaluation", Raquel Torres, Monica Huerta, Ricardo Gonzalez, Roger Clotet and Juan Pablo Bermeo |
11:50 to 12:10 | "Scalable Models to Represent the Via-Pad Capacitance and Via-Traces Inductance in Multilayer PCB High-Speed Interconnects", Abraham Isidoro Muñoz, Miguel Angel Tlaxcalteco Matus, Reydezel Torres Torres and Gaudencio Hernandez Sosa | "Impact of neglecting the metal losses on the extraction of the relative permittivity from PCB transmission line measurements", Erika Yazmin Teran Bahena and Reydezel Torres Torres | "QoS Evaluation of VPN in a Raspberry Pi devices over Wireless Network", Luis Caldas, Juan Jara and Mónica Huerta |
12:10 to 12:30 | "Implementation of a Reconfigurable Neural Network in FPGA", Janaina Oliveira, Robson Moreno, Odilon Dutra and Tales Pimenta | "Reconfigurable FIR Filter Coefficient Optimization in Post-Silicon Validation to Improve Eye Diagram for Optical Interconnects",Ismael Duron-Rosales, Francisco E. Rangel-Patino, Jose E. Rayas-Sanchez, Jose L. Chavez-Hurtado and Nagib Hakim | "A Proposed Digital Predistorter Based on NLMS and PSO Algorithms", Omar Alngar, Walid El-Deeb and El-Sayed El-Rabaie |
12:30 to 15:00 | Lunch | Lunch | Closing remarks |
15:00 to 16:00 | Key Note 2: "Following the Path of 3D Integration", Malgorzata Chrzanowska-Jeske | Key Note 4: “Modeling and Verification of Heterogeneous Systems”, Filipe Vinci | |
16:00 to 16:15 | Break | Poster Introduction* | |
16:15 to 17:55 | Session 2 | Session 4 | |
16:15 to 16:35 | "MRAM control Transistor Resilience against Heavy-Ion Impacts", Walter Enrique Calienes Bartra, Raphael Brum, Guilherme Flach and Ricardo Reis | Break w/poster session (16:15 to 17:00) | |
16:35 to 16:55 | "A Charge-controlled Memristor Model for Image Edge Detection with a Memristive Grid", Arturo Sarmiento and Yojanes Rodríguez-Velásquez | ||
16:55 to 17:15 | "Characterization and modelling of Ag/TiO2/ITO devices exhibiting bipolar memristive properties", Jesús Jiménez-León, Arturo Sarmiento, Carlos De La Cruz Blas and Cristina Gomez-Polo | ||
17:15 to 17:35 | "Assessing the accuracy of the open, short and open-short de-embedding methods for on-chip transmission line s-parameters measurements", Juan Garcia Santos and Reydezel Torres | Key Note 5: (17:00 to 18:00) "Innovation by ASIC design and emerging substream markets"Jacobus Swart | |
17:35 to 17:55 | "Evaluation of Interconnects Based on Electromigration Criteria and Circuit Performance", Rafael Nunes, Roberto Orio and Jacobus Swart | ||
19:00 | Welcome Cocktail | ||
19:30 | Conference Banquet |
Aug 3, 2017
Basics of MOSFET Modeling
[paper] On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices
Aug 1, 2017
[paper] Circuit-level simulation methodology for Random Telegraph Noise by using Verilog-AMS
Circuit Design and Simulation Project using eSim
For more details, please visit: http://esim.fossee.in/circuit-simulation-project
Jul 26, 2017
Analysis of Short-Channel Effects in Junctionless DG MOSFETs #papers https://t.co/P2sqAueamw
Analysis of Short-Channel Effects in Junctionless DG MOSFETs #papers https://t.co/P2sqAueamw
— Wladek Grabinski (@wladek60) July 26, 2017
from Twitter https://twitter.com/wladek60
July 26, 2017 at 11:39AM
via IFTTT
[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping
doi: 10.1109/TED.2017.2713301
Jul 25, 2017
[paper] Compact On-Wafer Test Structures for Device RF Characterization
doi: 10.1109/TED.2017.2717196
Jul 8, 2017
[mos-ak] [2nd Announcement and Call for Papers] 15th MOS-AK ESSDERC/ESSCIRC Workshop
http://www.mos-ak.org/leuven_2017/
September 11, 2017 Leuven
2nd Announcement and Call for Papers
Together with the ASCENT Network represented by Profs Jim Greer and Nicolas Cordero as well as International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) and all the Extended MOS-AK TPC Committee, we have pleasure to invite to the 15th MOS-AK Compact Modeling Workshop which will be organized for consecutive 15time as in integral part of the ESSDERC/ESSCIRC Conference in Leuven on Sept.11, 2017.
Planned MOS-AK workshop is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors.
Important Dates:
- Preannouncement - March 2017
- Call for Papers - June 2017
- Final Workshop Program - August 2017
- MOS-AK Workshop - Sept.11, 2017
Venue: Leuven (B) <http://www.esscirc-essderc2017.org/venue>
Topics to be covered include the following among other related to the compact/SPICE modeling :
- Compact Modeling (CM) of the electron devices
- Advances in semiconductor technologies and processing
- Verilog-A language for CM standardization
- New CM techniques and extraction software
- Open Source TCAD/EDA modeling and simulation
- CM of passive, active, sensors and actuators
- Emerging Devices, TFT, CMOS and SOI-based memory cells
- Microwave, RF device modeling, high voltage device modeling
- Nanoscale CMOS devices and circuits
- Technology R&D, DFY, DFT and reliability/ageing IC Designs
- Foundry/Fabless Interface Strategies
- Nicolas Cordero, Tyndal (IRL)
- Denis Flandre, CUL (B)
- Jim Greer, Tyndal (IRL)
- Benjamin Iniguez URV (SP)
- Marcelo Pavanello, FEI (BR)
- Jean-Pierre Raskin, CUL (B)
- Wim Schoenmaker, Magwel (B)
- Chika Tanaka, Toshiba (J)
- Ashkhen Yesayan, IRPhE (AM)
(any related inquiries can be sent to papers@mos-ak.org)
Online Workshop Registration
(any related inquiries can be sent to register@mos-ak.org)
Postworkshop Publications:
in a special issue of the International Journal of High Speed Electronics and Systems
Extended MOS-AK Committee
You received this message because you are subscribed to the Google Groups "mos-ak" group.
To unsubscribe from this group and stop receiving emails from it, send an email to mos-ak+unsubscribe@googlegroups.com.
To post to this group, send email to mos-ak@googlegroups.com.
Visit this group at https://groups.google.com/group/mos-ak.
For more options, visit https://groups.google.com/d/optout.
Jul 4, 2017
[paper] A Compact Model for the Statistics of the Low-Frequency Noise of MOSFETs With Laterally Uniform Doping
doi: 10.1109/TED.2017.2713301
Abstract: In this paper, we develop a compact physics-based statistical model for random telegraph noise-related low-frequency noise in bulk MOSFETS with laterally uniform doping. The proposed model is suited for modern compact device models, such as PSP, BSIM, and EKV. With our proposed model, one can calculate the expected value and the variability of the noise as a function of bias and device parameters. We validate the model through numerous experimental results from different CMOS nodes, down to 40 nm. [read more...]
Jun 26, 2017
Multiple Honors for E3S Theme Leader, Professor Tsu-Jae King Liu
Jun 22, 2017
[paper] Design Strategies for Ultralow Power 10nm FinFETs
Abstract: In this work, new design strategies for 10nm node NMOS bulk FinFET transistors are investigated to meet low power (LP) (20pA/μm< IOFF <50pA/μm) and ultralow power (ULP) (IOFF <20pA/μm) requirements using three dimensional (3D) TCAD simulations. The punch-through stop implant, source and drain junction placement and gate workfunction are varied in order to study the impact on the OFF-state current (IOFF), transconductance (gm), gate capacitance (Cgg) and intrinsic frequency (fT). It is shown that the gate length of 20nm for the 10nm node FinFET can meet the requirements of LP transistors and ULP transistors by source-drain extension engineering, punch-through stop doping concentration, and choice of gate workfunction.
[read more https://doi.org/10.1016/j.sse.2017.06.012]
Rising SOI tide lifts Soitec into profit
https://shar.es/1BtAZy
Sent using ShareThis
Jun 14, 2017
[C4P] IEDM 2017
The Annual International Electron Devices Meeting will be held at the Hilton San Francisco Union Square San Francisco, CA December 2-6, 2017
Abstract Deadline (four page final paper): August 2nd, 2017
A Call for Papers flyer is available here: IEDM 2017 Call For Papers.
Customized Call for Papers for each of the technical subcommittee areas are also available:
- Circuit and Device Interaction (CDI)
- Characterization, Reliability, and Yield (CRY)
- Compound Semiconductor and High Speed Devices (CHS)
- Memory Technology (MT)
- Modeling and Simulation (MS)
- Material and interface modeling
- Compact models
- Kinetic Monte Carlo and Molecular Dynamics
- Reliability and variability modeling
- Technology benchmarking
New or trending areas include: - First principle based quantum transport
- Process simulation with atomistic methods
- Self heating, interconnect and packaging
- Nano Device Technology (NDT)
- Optoelectronics, Displays, and Imagers (ODI)
- Power Devices (PD)
- Process and Manufacturing Technology (PMT)
- Sensors, MEMS, and BioMEMS (SMB)
[paper] Well-Posed Device Models for Electrical Circuit Simulation
A Guide to Creating Robust Device Models
A. Gokcen Mahmutoglu, Tianshi Wang, Archit Gupta and Jaijeet Roychowdhury
March 25, 2017
NEEDS has a vision for a new era of electronics that couples the power of billion-transistor CMOS technology with the new capabilities of emerging nano-devices and a charter to create high-quality models and a complete development environment that enables a community of compact model developers.
NEEDS Team: Purdue, MIT, UC Berkeley, and Stanford.”
1For more information about NEEDS please visit https://nanohub.org/groups/needs/.