Nov 8, 2016

[mos-ak] [press note] 14th MOS-AK ESSDERC/ESSCIRC Workshop

Arbeitskreis Modellierung von Systemen und Parameterextraktion 
Modeling of Systems and Parameter Extraction Working Group
14th MOS-AK ESSDERC/ESSCIRC Workshop
Lausanne, September 12, 2016

The MOS-AK Modeling Working Group, a global compact/SPICE modeling and Verilog-A standardization forum, held its annual autumn workshop on September 12, 2016 in Lausanne (CH) as its 14th consecutive modeling event at the ESSDERC/ESSCIRC Conference. The event was coordinated by Larry Nagel, OEC (USA) and Andrei Vladimirescu, UCB (USA); ISEP (FR) representing the International MOS-AK Board of R&D Advisers. The workshop was co-sponsored by ASCENT Network (lead sponsor) and EPFL EDLab, with technical program sponsorship provided by the IEEE WiE Group (CH), Eurotraining and NEEDS of nanoHUB.org.

 

A group of the international academic researchers and modeling engineers attended 12 technical compact modeling presentations covering full development chain form the nanoscaled technologies thru semiconductor devices modeling to advanced IC design support. The MOS-AK speakers have shared their latest perspectives on compact/SPICE modeling and Verilog-A standardization in the dynamically evolving semiconductor industry and academic R&D. 

 

The workshop was opened by Prof. J. Greer; Tyndall National Institute, the MOS-AK keynote speaker, who has introduced the ASCENT Network. The ASCENT is combined resources of Tyndall (Ireland), imec (Belgium) and Leti (France) nanofabrication capabilities and electrical characterization facilities integrated into a single research infrastructure present a truly unique R&D opportunity. It provides characterization community with access to advanced test chips, flexible fabrication and advanced test and characterization equipment to accelerate development of advanced models at scales of 14nm and below.

 

The event featured additional technical presentations covering compact model development, implementation, deployment and standardization. These contributions were delivered by leading academic and industrial experts, including: Denis Rideau; STM (F), presenting a modeling study of the drain current in advanced MOSFETs. Maria-Alexandra Paun; EPFL (CH), focusing on the humidity sensors based on MWCNTs/MMA composite in SOI CMOS technological process. Mike Brinson; London Met (UK), presenting QUCS-S - maturing GPL software package for circuit simulation and compact modeling of current and emerging technology devices. Alexander Kloes; THM Giessen (D), discussing a closed-form charge-based current model of organic TFT including non-linear injection effects. Jean-Michel Sallese; EPFL (CH), discussing an advances in analytical modeling. Marco Bellini, ABB CRC (CH), presenting extraction of compact models for EMI / EMC simulations of power devices. Muhammad Nawaz; ABB CRC (S), reviewed characterization and modeling of SiC MOSFET power modules. Mansun Chan; HKUST (HK), discussing concurrent device and circuit reliability simulation. Benjamin Iñiguez; URV (SP), talking about temperature dependent GIZO TFT modeling. Mike Schwarz; THM (D), discussing analytical III-V SB MOSFET modeling and its performance analysis from room to cryogenic temperature. Matthias Bucher; TUC (GR), giving an EKV3 model update. The presentations are available online for download at http://www.mos-ak.org/lausanne_2016

 

The MOS-AK Modeling Working Group has various deliverables and initiatives including a book entitled "Open Source CAD Tools for Compact Modeling" and an open Verilog-A directory with models and supporting CAD software. The MOS-AK Association plans to continue its standardization efforts by organizing additional compact modeling meetings, workshops and courses in Europe, USA, India and China throughout 2016/2017 including:


* 9th International MOS-AK Workshop at Berkeley in the timeframe of IEDM and CMC meetings (Dec.7, 2016) 

* Spring MOS-AK Workshop in Lausanne during DATE Conference (March 31 2017)

* 2nd Sino MOS-AK Workshop in Hangzhou (June 2017)

* 15th MOS-AK ESSDERC/ESSCIRC Workshop in Leuven (Sept.11, 2017)

 

About MOS-AK Association:

MOS-AK, an international compact modeling association primarily focused in Europe, to enable international compact modeling R&D exchange in the North/Latin Americas, EMEA and Asia/Pacific Regions. The MOS-AK Modeling Working Group plays a central role in developing a common language among foundries, CAD vendors, IC designers and model developers by contributing and promoting different elements of compact/SPICE modeling and its Verilog-A standardization and related CAD/EDA tools for the compact models development, validation/implementation and distribution.

 

About ASCENT Network:

ASCENT provides fast and easy access to the world's most advanced CMOS technologies and infrastructure including access to 14nm CMOS device data, nanoscale test chips and device characterisation facilities at Tyndall (Ireland), imec (Belgium) and Leti (France). ASCENT has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 654384.

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Nov 7, 2016

[paper] Field programmable analog array: A boon for analog world

Field programmable analog array: A boon for analog world
Dipti and B. V. R. Reddy,
2016 3rd International Conference on Computing for Sustainable Global Development 
(INDIACom), New Delhi, India, 2016, pp. 2975-2980.

Abstract: n analog chips designing, fabricating, and testing takes a lot of time, money and perfection. In contrast design of digital integrated circuits is fully automated now a day. Due to simpler nature of digital circuits, as compared to Analog circuits, leads to development of libraries and synthesis tools for fast synthesis of digital circuits. To reduce the cost and time-to-market CPLDs and FPGAs are generally used for prototyping of digital integrated circuits. But FPAAs i.e Field Programmable Analog Arrays are boon for designing of analog and mixed-signal Integrated Circuits because of rapid prototyping. FPAA is not only optimal for all solution in contrast to FPGAs but it also reduces the verification and designing cost. This again results from complex nature of analog circuits which needs factors like signal to noise ratio, bandwidth, frequency response, linearity etc. to be addressed. FPAAs are made using configurable analog blocks (CAB) and networks, which are used to provide required interconnection among Cabs. Like FPGAs, circuit functionality is much more sensitive to parasitics introduced by the programming devices in FPAA. So the design of FPAAs architecture and CABs are mutually dependent. To design an efficient FPAA, a designer needs to compromise between flexibility and the number of programmable switches in designing FPAA architectures and the CAB topologies. Various papers are studied for different topologies used in FPAAs and various applications designed with the use of FPAA. In March 2013, Paul Hasler come up with automated approach based on EKV model for characterization of device mismatch, second order defects with temperature. After verification of characterization current sources were created with 2.2% RMS error over dynamic range of 25dB. Field programmable gate array represents a new direction to analog and mixed signal domain keeping the idea of FPGAs in digital domain. RASP is useful for analog designers because they can save the analog components in the form of CABs. RASPER tool was developed for placement and routing of RASP 2.7 and RASP 2.8 versions Whereas GRASPER was developed for RASP 2.9.In digital circuits parasitic only affect the speed of operation but in analog circuits they plays a crucial role for circuit performance and functionality. Floating gate technology was used to simplify designing and implementation, increased system reliability, high precision, innovative approach. In near future FPAA technology will come up with better architecture, low power and more applications with less time to market.

keywords: Decision support systems, Handheld computers, Configurable analog block (CAB), Field programmable analog array (FPAA), Generic reconfigurable array specification and programming environment tool (GRASPER), Operational Transconductance Amplifier, Reconfigurable analog signal processor (RASP)

[read more...]

Oct 27, 2016

2017 1st Electron Devices Technology and Manufacturing Conference (call for #papers) https://t.co/CAj9B5ifWU


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October 27, 2016 at 05:08PM
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AMS Multi Project Wafer Service

AMS MPW Service:

ams' Multi Project Wafer (MPW) service, also known as shuttle runs, is a fast and cost-efficient prototyping service, which combines several designs from different customers onto a single wafer.

ams’ best in class MPW service offers significant cost advantages for foundry customers as the costs for wafers and masks are shared among a number of different shuttle participants. It includes the whole range of 0.18µm and 0.35µm specialty processes:
  • CMOS Mixed Signal
  • CMOS Mixed Signal with embedded EEPROM
  • CMOS High Voltage (up to 120 Volts)
  • CMOS High Voltage with embedded EEPROM
  • CMOS Opto
  • SiGe-BiCMOS
The complete MPW schedule including detailed start dates per process is available on the web at http://asic.ams.com/MPW

Deliverables: Participating the ams MPW service includes the delivery of 40 prototypes for design verification. Packaged engineering samples are offered within 2 days (ceramic) and 3 weeks (plastics) cycle time, respectively. The total turnaround time from MPW deadline to delivery is app. 8 weeks (CMOS). Overall, ams offers almost 150 MPW start dates in 2016 and 2017, enabled by long lasting co-operations with partner organizations such as CMP, Europractice, Fraunhofer IIS and Mosis. Customers located in APAC region may also participate via our local MPW program partners Toppan Technical Design Center Co., Ltd (TDC) and MEDs Technologies [read more...]

ARM Fellow Surveys Moore's Law at 3nm IC https://t.co/JUPsAtrkFb #papers


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October 27, 2016 at 10:43AM
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Oct 26, 2016

[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V https://t.co/XQsatKslTX


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October 26, 2016 at 05:03PM
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[JEDS #papers ] Characterization of RF Noise in UTBB FD-SOI MOSFET https://t.co/LNlvvNOb5V


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October 26, 2016 at 04:49PM
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Oct 25, 2016

Transistor Sizing for Bias-Stress Instability Compensation in Inkjet-Printed Organic C-Inverters https://t.co/91uJURy3KA #papers


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October 25, 2016 at 09:07PM
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[ESSDERC Paper] Compact model for variability of low frequency noise due to number fluctuation effect

Compact model for variability of low frequency noise due to number fluctuation effect
N. Mavredakis and M. Bucher
2016 46th European Solid-State Device Research Conference (ESSDERC)
Lausanne, Switzerland, 2016, pp. 464-467

Abstract: Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.

Keywords: compact models, Low-frequency noise, MOSFET, Reactive power, Semiconductor device modeling, Shape, Standards, MOSFET, low frequency noise, noise variability

URL: http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7599686&isnumber=7598672

Oct 24, 2016

[SSE Paper] Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements 

Daniel Tomaszewskia, Grzegorz Głuszkoa, Lidia Łukasiakb,
Krzysztof Kucharskia, Jolanta Malesinskab
aDivision of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), ul. Okulickiego 5E, 05-500 Piaseczno, Poland 
bInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

Abstract: An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.

Keywords: MOSFET CMOS Threshold voltage Junction capacitance Parameter extraction

Cite: Tomaszewski D et al. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements. Solid State Electron (2016), http://dx.doi.org/10.1016/j.sse.2016.10.006

Sub-Minimum-Area MPW Sharing

Is Your Multi-Project Wafer Project Smaller Than the Fab Minimum Area?

Share the minimum area with other MPW customers to save mask costs

With the cost of mask sets going up with every node, even a multi-project wafer (MPW) can break your NRE budget, particularly if you plan to run multiple test spins. At 28nm, a 6mm2 area tile can cost over $100,000.

One solution is to share the minimum tile area with someone else who is using the same technology and metal stack that you are targeting. We periodically get these kinds of requests from customers. Please contact directly star@esilicon.com if you would like eSilicon to list your own MPW shuttle sharing opportunity, or if you would like eSilicon to contact you when future MPW tile sharing opportunities are available.

Following are upcoming opportunities to share a multi-project wafer (MPW) tapeout with another eSilicon customer. If you are interested, just email eSilicon.

Multi-Project Wafer Minimum Tile Sharing Opportunities for TSMC Technologies
Tapeout
Month
Technology Metal Stack I/O Price/mm2 Minimum
Area
Final GDSII
Due
Tapeout
Date
Estimated
Ship Date
October 65nm MS RF GP  1P9M_6x1z1u  2.5V  $4,700 1mm2 October 10 October 12 November 23
65nm MS RF LP 1P9M_6x1z1u 2.5V  $4,700 1mm2 October 10 October 12 November 23
180nm MS RF G 1P6M_4x1u 3.3V $1,000 5mm2 October 24 October 26 December 7
November 40nm MS RF LP 1P10M 1.8V $7,500 1mm2 October 31 November 2 January 17

Oct 21, 2016

#Compact #Modeling of Surface Potential, Charge, and Current in Nanoscale Transistors Under Quasi-Ballistic Regime https://t.co/BsnCEEdo8a


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October 21, 2016 at 04:54PM
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Oct 20, 2016

Free Semiconductor Books on SemiWiki

Download free PDF versions of three pivotal semiconductor books available on SemiWiki.com:
  1. Mobile Unleashed: The History of ARM
  2. Fabless: The Transformation of the Semiconductor Industry
  3. EDAGraffiti: 25 years of experience in EDA
Only registered SemiWiki members can access these wiki pages so if you are not already a member please join as a guest: https://www.semiwiki.com/forum/register.php

Oct 19, 2016

[mos-ak] [2nd Announcement and Call for Papers] 9th International MOS-AK Workshop Berkeley DEC.7, 2016

 9th International MOS-AK Workshop  
  Berkeley December 7, 2016 
    2nd Announcement and Call for Papers   

Together with the MOS-AK workshop host, Prof. Jaijeet Roychowdhury, UCB and International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) as well as all the Extended MOS-AK TPC Committee, we have pleasure to invite to the 9th International MOS-AK Workshop which will be held at EECS Department, University of California, Berkeley on December, 7, 2016. Planned MOS-AK workshop is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors.

Important Dates:
  • Preannouncement - Sept 2016
  • Call for Papers - Oct. 2016
  • Final Workshop Program - Nov. 2016
  • MOS-AK Workshop - Dec. 7 2016
Venue:
EECS Department
University of California, Berkeley

Topics to be covered include the following among other related to the compact/SPICE modeling :
  • Compact Modeling (CM) of the electron devices
  • Advances in semiconductor technologies and processing
  • Verilog-A language for CM standardization
  • New CM techniques and extraction software
  • Open Source TCAD/EDA modeling and simulation
  • CM of passive, active, sensors and actuators
  • Emerging Devices, TFT, CMOS and SOI-based memory cells
  • Microwave, RF device modeling, high voltage device modeling
  • Nanoscale CMOS devices and circuits
  • Technology R&D, DFY, DFT and reliability/ageing IC Designs
  • Foundry/Fabless Interface Strategies
Online MOS-AK Abstract Submission:
Prospective authors should submit online 
(any related inquiries can be sent to abstracts@mos-ak.org)

Online Workshop Registration:
http://www.mos-ak.org/berkeley_2016/registration.php
(any related inquiries can be sent to register@mos-ak.org)

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special issue of the International Journal of High Speed Electronics and Systems

Extended MOS-AK Committee

WG19102016
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Oct 17, 2016

Reliable Gate Stack And Substrate Parameter Extraction Based On CV Measurements For 14nm FDSOI Technology https://t.co/enF2K7D6tT #papers


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Oct 15, 2016

Theoretical analysis and modeling for nanoelectronics https://t.co/PsFJzoJgC8 #papers #feedly


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Oct 14, 2016

FOSDEM 2017 EDA Devroom Call for Participation



This is the call for participation in the FOSDEM 2017 devroom on Free/Open Source Software (FOSS) Electronic Design Automation (EDA) tools, to be held on Sunday 5 February 2017 in Brussels, Belgium. We are looking for contributions under the form of talks and tutorials covering the following main topics:
  • Printed Circuit Board (PCB) design tools (e.g. KiCad and gEDA)
  • Analogue and digital simulators (e.g. ngspice, Qucs, Gnucap, Xyce, GHDL, Icarus and Verilator)
  • Any other EDA tools such as high-level tools for digital hardware design (e.g. Migen) and HDL synthesis tools (e.g.Yosys)
  • Inter-project opportunities for collaboration
We hope to provide an opportunity for attendees to bring themselves up to date on the latest FOSS EDA developments, share knowledge and identify opportunities to collaborate on development tasks. Have a look at last year's event for a taste of what the EDA devroom is about.

The submission process
Please submit your proposals at 
before 1 December 2016.

If you already have a Pentabarf account (for example as a result of having submitted a proposal in the past), make sure you use it to log in and submit your proposal. Do not create a new account if you already have one. Please provide a bit of information about yourself under Person -> Description -> Abstract. When you submit your proposal (creating an "Event" in Pentabarf), make sure you choose the "Electronic Design Automation (EDA) devroom" in the track drop-down menu. Otherwise your proposal might go unnoticed. Fill in at least a title and abstract for the proposed talk and a suggested duration. Bear in mind that a lot of the value in these meetings comes from the discussions, so please be reasonable regarding the duration of the talk.

Important dates
  • 1 December 2016: deadline for submission of proposals
  • 11 December 2016: announcement of final schedule
  • 5 February 2017: devroom day
Recordings
The FOSDEM organisers hope to be able to live-stream and record all the talks. The recordings will be published under the same licence as all FOSDEM content (CC-BY). Only presentations will be recorded, not informal discussions and whatever happens during the lunch break. By agreeing to present at FOSDEM, you automatically give permission to be recorded. The organisers will agree to make exceptions but only for exceptional and well-reasoned cases.
Mailing list

Feel free to subscribe to the mailing list of the EDA devroom to submit ideas, ask questions and generally discuss about the event.

Spread the word!
This is the third EDA devroom at FOSDEM. The first two were very well received. Let's make sure as many projects and developers as possible are present. Thanks!

Oct 13, 2016

[call for papers] 1st EDTM 2017

Submission deadline: November 4th, 2016
Camera ready, one page text and one page figures

At Toyama International Conference Center, Toyama, Japan
February 28th to March 2nd, 2017

Why EDTM has been started: System performance continues to grow, even though device scaling is saturated. Based on strong manufacturing technologies, Asia has strong potential to take an initiative for system integration. Deep-dive discussions among technical communities on materials, processes, and devices are aimed to accelerate manufacturing innovations through this forum.

1. Technical sessions

EDTM 2017 and beyond will have a strong specific technical focus, and this year’s focus being on devices and process technologies for advanced applications, IoE (Internet of Everything) and related low-power devices, advanced memories, sensors, actuators, MEMS, bio.-chips, passive devices, and all types of (exploratory) devices related to advance applications and IoE. Papers/Posters on materials and processes for enabling above-menHoned devices building in heterogeneous integration such as 2.1, 2.5 and 3D structures using wafer-level packaging process (e.g.) are of great focus. EDTM aims for highest quality, and all papers accepted would be subject to IEEE-EDS standard review processes and conference publishing guidelines. Accepted and presented papers will be published in EDTM proceedings. A selected number of high impact EDTM papers would be invited for the consideration of publication in the IEEE Journal of Electron Devices Society (J- EDS) as extended version of EDTM conference papers following the IEEE publication policy and J-EDS author-guidelines.

2. Education

  • Tutorials: We will provide both the basic and advanced programs. Basic program will be presented in local language.
  • Poster sessions: Primarily intended for young engineers and students. The best poster will be awarded in the conference.
  • Short courses: Will bring high level programs.

3. Exhibition

Given the strong semiconductor manufacturing base in Asia, we intend to offer exhibits that will demonstrate products and technology. All of the exhibitors will have an opportunity to offer technical insight and share their knowhow. Moreover, we hope to offer Forum Making Session to engage and allow deeper discussions between device, material, and equipment engineers and technologists.

Papers in the following areas are requested by Subcommittee on:

  • Devices and Manufacturing for “Cloud and Edge”
  • Packaging and Manufacturing for “Cloud and Edge”
  • Process, Tools, and Manufacturing
  • Semiconductor Materials
  • Reliability & Modeling (including compact/SPICE)