Compact model for variability of low frequency noise due to number fluctuation effect
N. Mavredakis and M. Bucher
2016 46th European Solid-State Device Research Conference (ESSDERC)
Lausanne, Switzerland, 2016, pp. 464-467
Abstract: Variability of low frequency noise (LFN) in MOSFETs is both geometry- and bias-dependent. RTS noise prevails in smaller devices where noise deviation is mostly area-dominated. As device dimensions increase, operating conditions determine noise variability maximizing it in weak inversion and increasing it with drain voltage. This dependence is shown to be directly related with fundamental carrier number fluctuation effect. A new bias- and area-dependent, physics-based, compact model for 1/f noise variability is proposed. The model exploits the log-normal behavior of LFN. The model is shown to give consistent results for average noise, variance, and standard deviation, covering bias-dependence and scaling over a large range of geometry.