Monday, 24 October 2016

[SSE Paper] Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements

Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements 

Daniel Tomaszewskia, Grzegorz Głuszkoa, Lidia Łukasiakb,
Krzysztof Kucharskia, Jolanta Malesinskab
aDivision of Silicon Microsystem and Nanostructure Technology, Instytut Technologii Elektronowej (ITE), ul. Okulickiego 5E, 05-500 Piaseczno, Poland 
bInstitute of Microelectronics and Optoelectronics, Warsaw University of Technology, ul. Koszykowa 75, 00-662 Warsaw, Poland

Abstract: An alternative method for an extraction of the MOSFET threshold voltage has been proposed. It is based on an analysis of the MOSFET source-bulk junction capacitance behavior as a function of the gate-source voltage. The effect of the channel current on the threshold voltage extraction is fully eliminated. For the threshold voltage and junction capacitance model parameters non-iterative methods have been used. The proposed method has been demonstrated using a series of MOS transistors manufactured using a standard CMOS technology.

Keywords: MOSFET CMOS Threshold voltage Junction capacitance Parameter extraction

Cite: Tomaszewski D et al. Elimination of the channel current effect on the characterization of MOSFET threshold voltage using junction capacitance measurements. Solid State Electron (2016), http://dx.doi.org/10.1016/j.sse.2016.10.006

No comments: