[mos-ak] [Final Program] 5th International MOS-AK/LAEDC Workshop, July 2, 2023, Puebla (MX)

Arbeitskreis Modellierung von Systemen und Parameterextraktion 

Modeling of Systems and Parameter Extraction Working Group

5th International MOS-AK/LAEDC Workshop

July 3, 2023, Puebla (MX)

Final Workshop Program

Together with Profs Benjamin Iñiguez Nicolau, and Roberto S. Murphy Arteaga, local MOS-AK/LAEDC workshop coordinators, the LAEDC Organizers as well as all the Extended MOS-AK TPC Committee, would like to invite you to the 4th International MOS-AK/LAEDC Workshop which will be organized as the virtual/online event on July 3, 2022, between 8:00am - 12:00pm (local MX time) as an in-person event in Puebla (MX) providing an opportunity to meet with modeling engineers and researchers from Europe and Latin America.

The final program of the 5th International MOS-AK/LAEDC Workshop is available online:

https://www.mos-ak.org/puebla_2023/

Online Event Registration is open; any related enquiries can be sent to registration@mos-ak.org or laedc@ieee.org 

Important Dates: 

• Final Workshop Program: June 2023
  
• MOS-AK: July 2, 2023, Puebla (MX)
• 8:00am -  12:00pm (local MX time) MOS-AK Workshop

W.Grabinski for Extended MOS-AK Committee

WG210623

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[book] Device Circuit Co-Design Issues in FETs

Device Circuit Co-Design Issues in FETs

Editors: Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani

ISBN 9781032414256280 Pages 269 B/W Illustrations 

August 22, 2023 by CRC Press

Description

This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.

Table of Contents

1. Modeling for CMOS Circuit Design. 

2. Conventional CMOS Circuit Design. 

3. Compact modeling of junctionless Gate-All-Around MOSFET for circuit simulation. 

4. Novel Gate-Overlap Tunnel FETs for Superior Analog, Digital, and Ternary Logic Circuit Applications. 

5. Phase Transition Materials for Low Power Electronics. 

6. Impact of total ionizing dose effect on SOI-FinFET with spacer engineering. 

7. Scope and Challenges with Nanosheet FET based Circuit design. 

8. Scope with TFET based Circuit and System Design. 

9. An overview of FinFET based Capacitorless 1T-DRAM. 

10. Literature Review of the SRAM Circuits Design Challenges. 

11.Challenges and Future Scope of Gate-All-Around (GAA) Transistors: 

Physical Insights of Device-Circuit Interactions. 

[review] TCAD Simulations of Semiconductor Piezoresistance

Takaya Sugiura, Kazunori Matsuda*, Nobuhiko Nakano

Review: Numerical Simulations of Semiconductor Piezoresistance for Computer-Aided Designs

in IEEE J-EDS, vol. 11, pp. 325-336, 2023

DOI: 10.1109/JEDS.2023.3281866

  Department of Electronics and Electrical Engineering, Keio University, Yokohama, Kanagawa, Japan

* Division of Electrical, Electronic and Infocommunications Engineering, Osaka University, Suita, Japan

Abstract: The field of piezoresistance has mainly advanced through experimental research; however, the improved accuracy of simulations and the emergence of new materials have increased the importance of simulations in this field. This review discusses the methods and current topics related to simulations of piezoresistive devices. Advancing simulation modeling will facilitate the computer-aided design of piezoresistive devices, and this review introduces the means of establishing these models by discussing the current studies on simulations and calculations in this field. Two simulation methods currently exist namely, device simulations and first-principles theoretical analysis. This review focuses on numerical simulation approaches for modeling of the piezoresistive effect using the multiphysics simulations of the mechanical and electrical behaviors of piezoresistive materials.

FIG: Basic simulation flow for studies on semiconductor piezoresistors.

[paper] Vertical Junction-Less Nanowire FETs

C. Maneux (University of Bordeaux), C. Mukherjee (CNRS), M. Deng (University of Bordeaux), G. Larrieu (CNRS), Y. WANG, B. Wesling, and H. Rezgui (University of Bordeaux)

Strategies for Characterization and Parameter Extraction of Vertical Junction-Less Nanowire FETs Dedicated to Design Technology Co-Optimization

H02-1863 (Invited) at 243rd ECS Meeting and SOFC-XVIII 

Boston, MA, May 29 - June 2, 2023

Abstract: In the era of emerging computing paradigms and artificial neural networks, hardware and functionality requirements are in the surge. In order to meet low power and latency criteria, new architectures for in-memory computing are being explored as alternatives to traditional von Neumann machines, which requires technological breakthrough at the semiconductor device level such as vertical gate-all-around junctionless nanowire field effect transistors (VNWFET), that can address many process challenges such as downscaling, short-channel effects, compactness and electrostatic control. Its integration in the mainstream design flow is not straightforward and requires design technology co-optimization (DTCO) at an early stage. This invited paper explores strategies for accurate characterization and parameter extraction of the VNWFETs to feed the DTCO compact models

Fig: Final verification using full 3D multiphysics device thermal simulation, accounting for both ballistic and diffusive heat flux

[paper] FDSOI Threshold Voltage Model

Hung-Chi Han1, (Student, IEEE), Zhixing Zhao2, Steffen Lehmann2,

Edoardo Charbon1, (Fellow, IEEE), and Christian Enz1 (Life Fellow, IEEE)

Novel Approach to FDSOI Threshold Voltage Model Validated at Cryogenic Temperatures

in IEEE Access, DOI: 10.1109/ACCESS.2023.3283298

1 Ecole Polytechnique Fédérale de Lausanne (EPFL), 2000 Neuchâtel, Switzerland
2 GlobalFoundries, 01109 Dresden, Germany

Abstract: The paper presents a novel approach to to the modeling of the back-gate dependence of the threshold voltage of Fully Depleted Silicon-On-Insulator (FDSOI) MOSFETs down to cryogenic temperatures by using slope factors with a gate coupling effect. The FDSOI technology is well-known for its capability to modulate the threshold voltage efficiently by the back-gate voltage. The proposed model analytically demonstrates the threshold voltage as a function of the back-gate voltage without the pre-defined threshold condition, and it requires only a calibration point, i.e., a threshold voltage with the corresponding back-gate voltage, front- and back-gate slope factors, and work functions of front and back gates. The model has been validated over a wide range of the back-gate voltages at room temperature and down to 3 K. It is suitable for optimizing low-power circuits at cryogenic temperatures for quantum computing applications

FIG: Room temperature back-gate coefficient η versus VT−VB for an n-type conventional well (RVT) FDSOI FET with 1 µm of gate length and width. The θ=0 happens at VT−VB = −0.63V due to −0.63V of the front-back gate work function difference 

Acknowledgment: The authors would like to thank Claudia Kretzschmar from GlobalFoundries Germany and GlobalFoundries University Partnership Program for providing 22 FDX® test structures and support. Hung-Chi Han would like to thank Davide Braga from Fermi National Accelerator Laboratory for his valuable support. This project has received funding from the European Union’s Horizon 2020 Research & Innovation Program under grant agreement No. 871764. SEQUENCE.