[course] MEAD @ EPFL

Low-Power Analog Circuit Design

Live Course @ EPFL, Lausanne, Switzerland

JUNE 17-21, 2024

Registration Deadline: May 17, 2024 >> REGISTER

MONDAY, June 17
8:30 am-12:00 pm	MOS Transistor Modeling for Low-Voltage and Low-Power Circuit Design	Christian Enz
1:30-5:00 pm	Design of Low-Power Analog Circuits using the Inversion Coefficient	Christian Enz
TUESDAY, June 18
8:30 am-12:00 pm	Noise Performance of Elementary Circuit Blocks	Boris Murmann
1:30-5:00 pm	Opamp Topologies and Design Fundamentals	Boris Murmann
WEDNESDAY, June 19
8:30-10:00 am	Low-Power High Efficiency OpAmp Design	Klaas Bult
10:30 am-12:00 pm	Low-Power High Efficiency Residue Amplifiers	Klaas Bult
1:30-3:00 pm	Analog Design Methodology and Practical Techniques for Frequency Compensation	Vadim Ivanov
3:30-5:00 pm	Energy Efficient Voltage References, Biasing in Analog Systems and Current Sources	Vadim Ivanov
THURSDAY, June 20
8:30-10:00 am	Power Dissipation in ADC Buidling Blocks	Klaas Bult
10:30 am-12:00 pm	Power Dissipation in ADCs	Klaas Bult
1:30-5:00 pm	Micropower ADCs	Kofi Makinwa
FRIDAY, June 21
8:30 am-12:00 pm	Energy Efficient Sensor Interfaces	Taekwang Jang
1:30-5:00 pm	Low-Power Frequency Reference Circuits	Taekwang Jang
1:30-5:00 pm	Power Management With Nanoampere Consumption and Efficient Energy Harvesting	Vadim Ivanov

FOSS Circuit Simulators

AN OPEN-SOURCE, FREE CIRCUIT SIMULATOR

by: Bryan Cockfield on July 30, 2023

The original circuit simulation software, called the Simulation Program with Integrated Circuit Emphasis, or SPICE as it is more commonly known, was originally developed at the University of Califorina Berkeley in the 1970s with an open-source license. That’s the reason for the vast versions of SPICE available now decades after the original was released, not all of which are as open or free as we might like [1].

Fig: The Quite Universal Circuit Simulator includes a GUI based on the Qt toolkit and handles ad and ac analysis, S-parameters, harmonic balance analysis, noise analysis, and so forth. 

We’ve [2] listed all the simulators we found - the good, the bad, and the ugly - that actually did perform circuit simulation in some fashion. They are provided alphabetically, along with the most notable benefits and drawbacks we uncovered.

REF:
[1] An Open-Source, Free Circuit Simulator by Bryan Cockfield on July 30, 2023
[2] Best free analog circuit simulators by Lee Teschler on January 26, 2022

[book] Device Circuit Co-Design Issues in FETs

Device Circuit Co-Design Issues in FETs

Editors: Shubham Tayal, Billel Smaani, Shiromani Balmukund Rahi, Samir Labiod, Zeinab Ramezani

ISBN 9781032414256280 Pages 269 B/W Illustrations 

August 22, 2023 by CRC Press

Description

This book provides an overview of emerging semiconductor devices and their applications in electronic circuits, which form the foundation of electronic devices. Device Circuit Co-Design Issues in FETs provides readers with a better understanding of the ever-growing field of low-power electronic devices and their applications in the wireless, biosensing, and circuit domains. The book brings researchers and engineers from various disciplines of the VLSI domain together to tackle the emerging challenges in the field of engineering and applications of advanced low-power devices in an effort to improve the performance of these technologies. The chapters examine the challenges and scope of FinFET device circuits, 3D FETs, and advanced FET for circuit applications. The book also discusses low-power memory design, neuromorphic computing, and issues related to thermal reliability. The authors provide a good understanding of device physics and circuits, and discuss transistors based on the new channel/dielectric materials and device architectures to achieve low-power dissipation and ultra-high switching speeds to fulfill the requirements of the semiconductor industry. This book is intended for students, researchers, and professionals in the field of semiconductor devices and nanodevices, as well as those working on device-circuit co-design issues.

Table of Contents

1. Modeling for CMOS Circuit Design. 

2. Conventional CMOS Circuit Design. 

3. Compact modeling of junctionless Gate-All-Around MOSFET for circuit simulation. 

4. Novel Gate-Overlap Tunnel FETs for Superior Analog, Digital, and Ternary Logic Circuit Applications. 

5. Phase Transition Materials for Low Power Electronics. 

6. Impact of total ionizing dose effect on SOI-FinFET with spacer engineering. 

7. Scope and Challenges with Nanosheet FET based Circuit design. 

8. Scope with TFET based Circuit and System Design. 

9. An overview of FinFET based Capacitorless 1T-DRAM. 

10. Literature Review of the SRAM Circuits Design Challenges. 

11.Challenges and Future Scope of Gate-All-Around (GAA) Transistors: 

Physical Insights of Device-Circuit Interactions. 

[book] Circuit Simulation and Modeling with Phyton

Circuit Simulation and Modeling with Phyton

Hardcover – April 9, 2021

by Kenji Mori (author), Akira Matsuzawa (author)

This book is written for people who are learning Python. Circuit simulation and modeling are selected as subjects for programming using Python. The process of building a net" is attached to Chapter 5 appendix "Diode/MOSFET Coding Flow Diagram". Text Python source code suitable for learning by students and companies / corporations can be downloaded from the web.

About the Authors

Akira Matsuzawa: Professor Emeritus, Tokyo Institute of Technology President of Tech Idea Co., Ltd. 1978; Completed master's course at Graduate School of Engineering, Tohoku University. Joined Matsushita Electric Industrial (now Panasonic) in the same year 1997; Completed doctoral program at Graduate School of Engineering, Tohoku University 2003; Professor, Graduate School of Science and Engineering, Tokyo Institute of Technology 2018 Retired from Tokyo Institute of Technology Professor Emeritus at the same university

His books:
"First analog electronic circuit basic circuit edition" Kodansha (2015)
"First Analog Electronic Circuit Practical Circuit Edition" Kodansha (2016)
"Analog RFCMOS Integrated Circuits Basic Edition" Baifukan (2010)
"Analog RFCMOS Integrated Circuits Application Edition" Baifukan (2011)
"Learning Circuit Simulation and Modeling with MATLAB" Torikagesha (2020)

Kenji Mori: Part-time Lecturer, Tokyo Institute of Technology March 1979. Graduated from Tokushima University Graduate School of Electrical Engineering, joined NEC Corporation in the same year, engaged in circuit simulator development, automatic filter design program development, and circuit check program development. Joined Nippon Steel Corporation in November 1990, engaged in parameter extraction of MOSFET models. April 2009 Developed a prototype program for automatic design of mixed-signal LSI with Mr. Sugawara, an industry-academia-government collaboration researcher at Tokyo Institute of Technology. April 2014 Part-time Lecturer, Tokyo Institute of Technology

His books:
"Circuit Simulation Technology and MOSFET Modeling" Realize Riko Center (2003)
"Learning Circuit Simulation and Modeling with MATLAB" Torikagesha (2020)

[paper] Compact Modeling of Carbon Nanotube FETs

A Compact and Robust Technique for the Modeling and Parameter Extraction 

of Carbon Nanotube Field Effect Transistors

Laura Falaschetti¹, Davide Mencarelli¹, Nicola Pelagalli¹, Paolo Crippa¹, Giorgio Biagetti¹,

Claudio Turchetti¹,George Deligeorgis², and Luca Pierantoni¹

Electronics 2020, 9(12), 2199; 

DOI: 10.3390/electronics9122199

1 Department of Information Engineering, Marche Polytechnic University, 60131 Ancona, Italy
2 Microelectronics Research Group (MRG/IESL), FORTH, Greece

Abstract: Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers.

Figure 2. 3D structure of CNTFET. Reprinted, with permission, from [I and II]

Aknowlwgement: This research was supported by the European Project “NANO components for electronic SMART wireless circuits and systems (NANOSMART)”, H2020—ICT-07-2018-RIA, n. 825430.

References:

[I] Deng, J.; Wong, H.P. A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including non-idealities and Its Application—Part I: Model of the Intrinsic Channel Region. IEEE Trans. Electron Devices 2007, 54, 3186–3194

[II] Deng, J.; Wong, H.P. A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including non-idealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking. IEEE Trans. Electron Devices 2007, 54, 3195–3205