[paper] Analysis and Compact Modeling of Negative Capacitance Transistor

Analysis and Compact Modeling of Negative Capacitance Transistor with High ON-Current
and Negative Output Differential Resistance
Part II: Model Validation

Girish Pahwa, Student Member, IEEE, Tapas Dutta, Member, IEEE, Amit Agarwal,
Sourabh Khandelwal, Member, IEEE, Sayeef Salahuddin, SM IEEE,
Chenming Hu, IEEE Fellow, and Yogesh Singh Chauhan, SM IEEE 

in IEEE Transactions on Electron Devices, vol. 63, no. 12, pp. 4986-4992, Dec. 2016

doi: 10.1109/TED.2016.2614436

Abstract: In this paper, we show a validation of our compact model for negative capacitance FET (NCFET) presented in Part I. The model is thoroughly validated with the TCAD simulations with respect to ferroelectric thickness scaling and temperature effects. Interestingly, we find that an NCFET with PZT ferroelectric of a large thickness provides a negative output differential resistance in addition to an expected high ON current and a sub-60 mV/decade subthreshold swing. The model is also tested for the Gummel symmetry and its transient capabilities are highlighted through a ring oscillator circuit simulation.

[read more at IEEE Xplore]

National Workshop on Advanced Nanoscale Device Design Using TCAD

The National Workshop on Advanced Nanoscale Device Design Using Technology Computer-Aided Design (TCAD) was organized by the IEEE SolidState Circuits Society (SSCS) College of Engineering Chengannur, India Chapter. The workshop was held 28 December 2015 through 1 January 2016 as a three-day tutorial and two-day handson session. The event was graced with the presence of distinguished lecturers from top institutions in India, including Prof. Yogesh S. Chouhan from IIT Kanpur delivering the keynote talk. The workshop attracted approximately 150 participants from 15 reputable academic institutions. People from industry and also attended the event.

The coordinators were proud to present a successful workshop as one of the first events since the formation of the Chapter. The event was funded by the SSCS extra subsidy program. The feedback received from the attendees was very positive. Each participant received a certificate during the closing ceremony of the event. The five-day workshop came to an end by the heartfelt vote of thanks by Nisha Kuruvilla, with a motto “This is just the beginning.” [read more...]

MNE&MS 2016: Seminar Announcement

MNE&MS 2016

Seminar Announcement

The 8th traditional seminar “Computer simulation and design of micro-and nanoelectronics and micro-electromechanical systems” (MNE&MS 2016), organized by the Nanotechnology Center “OrelNano” and Physics Department will take place at the Orel State University after Ivan Turgenev, 29 Naugorskoe Shosse (in 212 Auditorium), Orel, Russia, on April 29th 2016 from 10am to 5pm.

The main objective of the MNE&MS 2016 is to allow regional electronics industry companies and Universities present results in research and development in micro-and nanoelectronics, power electronics, and microelectromechanical systems (MEMS) to potential customers, interested professionals, and students. Hence, the scope of seminar covers the most of Key Enabling Technologies (KETs), that is the basis for innovations in a range of products across all industrial sectors.

The Seminar also aims to introduce to Companies and Universities the latest developments in the electronics development automation (EDA), in particular in technology computer aided design (TCAD) and in compact modeling. Seminar includes session with oral presentations, poster session and an Exhibition of products of participating companies.

Selected papers will be recommended for publication in journals “Fundamental and Applied Problems of Technics and Technology” and “Information Systems and Technologies”. In addition, selected papers will be recommended for publication in proceedings of “Nanosystems, nanomaterials and nanotechnologies” of the XIV International Scientific Practical Internet – Conference “Energy and Resource Saving – XXI Century”. Information about previous regional seminars is available online.

Will be coffee breaks during seminar. In campus there is students diner and hotel (Naugorskoe Shosse 29 A). On April 30, Saturday, Organizing Committee can organize trip to the Spasskoye-Lutovinovo - State Memorial and Natural Reserve Museum of famous Russian writer Ivan Turgenev.

Our University located in South-West of Central Russia in historical town Orel (or Oryol), that was founded in 1566. Orel placed on Oka and Orlik rivers junction in 382 km from Moscow and has beautiful surroundings with number of historical landmarks.

Contact phones: +79208250040
Hotel reception phone is +7(4862)419882 or +79038816347
Official language of seminar – Russian.
There is no registration fee.

Device to GDSII for IC Design Training

Hands on Training Program on “Device to GDSII for IC Design”

on 22-27 Feb 2016

Organized by VLSI Division of School of Electronics Engineering

Vellore Institute of Technology, Near Katpadi Rd Vellore, Tamil Nadu - 632014

The relentless march fast of the CMOS has slowed down and the semiconductor industry is looking for novel and innovative devices. Many novel devices are being explored currently. TCAD and Cadence tool allows us to generate new structures, circuits and analyze its performance. Unlike other circuit simulators, TCAD and Cadence needs a special training. This hands on training addresses this gap.

Target Audience: Faculty, students and research scholars from various engineering colleges of India. The number of participants is limited to 40. 

Topics to ďe addressed:

Using TCAD:

• Structure Creation, Simulation and Device Simulation 
• Process Simulation 
• Multi-gate Transistors 
• Radiation study on devices and circuits

Using Cadence: 

• RTL Design and Simulation 
• Synthesis and low power synthesis Using RTL Compiler 
• Physical aware synthesis and DFT 
• Block and Top Level P&R Using SOC Encounter 
• STA Using Timing Engine 

[read more...]

Simulating the World’s Smallest Integrated Switch

This visualization from CSCS in Switzerland shows the world’s smallest integrated switch.

The switch is based on the voltage-induced displacement of one or more silver atoms in the narrow gap between a silver and a platinum plate.

Researchers working under Juerg Leuthold, Professor of Photonics and Communications at ETH Zurich, have created the world’s smallest integrated optical switch. Applying a small voltage causes an atom to relocate, turning the switch on or off. ETH Professor Mathieu Luisier, who participated in this study, simulated the system using Piz Daint Supercomputer. The component operates at the level of individual atoms. The team’s latest development was recently presented in the journal Nano Letters.

[Call for Participation] FOSDEM 2016 Electronic Design Automation Devroom

 Call for Participation 

FOSDEM 2016 Electronic Design Automation Devroom 

This is the call for participation in the FOSDEM 2016 devroom on Free/Open Source Software (FOSS) Electronic Design Automation (EDA) tools, to be held on Saturday 30 January 2016 in Brussels, Belgium. We are looking for contributions under the form of talks covering the following main topics:

• Printed Circuit Board (PCB) design tools (e.g. KiCad and gEDA)
• Analogue and digital simulators (e.g. ngspice, Qucs, Gnucap, Xyce, GHDL, Icarus and Verilator)
• Any other EDA tools such as high-level tools for digital hardware design (e.g. Migen)
• Inter-project opportunities for collaboration

We hope to provide an opportunity for attendees to bring themselves up to date on the latest FOSS EDA developments, share knowledge and identify opportunities to collaborate on development tasks. Have a look at last year's event for a taste of what the EDA devroom is about.

The submission process
Please submit your proposals at https://penta.fosdem.org/submission/FOSDEM16 

before 4 December 2015.

If you already have a Pentabarf account (for example as a result of having submitted a proposal in the past), make sure you use it to log in and submit your proposal. Do not create a new account if you already have one. Please provide a bit of information about yourself under Person -> Description -> Abstract. When you submit your proposal (creating an "Event" in Pentabarf), make sure you choose the "EDA devroom" in the track drop-down menu. Otherwise your proposal might go unnoticed. Fill in at least a title and abstract for the proposed talk and a suggested duration. Bear in mind that a lot of the value in these meetings comes from the discussions, so please be reasonable regarding the duration of the talk.

Important dates

• 4 December 2015: deadline for submission of proposals
• 18 December 2015: announcement of final schedule
• 30 January 2016: devroom day

[Read More]

VI Regional Seminar MNE & MS 2014

VI Regional Seminar on Computer Modeling and Designing in Micro- and Nanoelectronics and in Microelectromechanical Systems (MNE & MS 2014),

Orel, Russia, March 28 2014

1. С.И. Матюхин¹, Welcome and Seminar Openning,
   ¹Госуниверситет-УНПК
2. Турин В.О.¹, Кильчицкая М.В.², Герасимов К.А.², Simulation of power bipolar transistor,
   ¹Госуниверситет-УНПК, ²БГТУ, г. Брянск
3. Ващенко В.А., The physical ESD design for integrated circuits and electronic devices,
   Maxim Integrated Corp., г. Сан Хосе, Калифорния, США
4. Цырлов А.М., Development of CMOS optocoupler,
   ОАО «Протон», г. Орёл
5. Студенников А.С., Development of CMOS ICs,
   ОАО «Протон», г. Орёл
6. Малый Д.О.¹, Матюхин С.И.², Ставцев А.В.¹, "Proton-Elektroteks" IGBT-devices JSC: basic approaches of production and quality assurance,
   ¹ЗАО «Протон-Электротекс», г. Орёл, ²Госуниверситет-УНПК
7. Макулевский Г.Р., Матюхин С.И., Current-voltage characteristics of laser diodes based on AlGaAs,
   Госуниверситет-УНПК
8. Матюхин С.И., Гришин В.О., Radiation effects of on the current-voltage characteristic of power diodes and thyristors,
   Госуниверситет-УНПК
9. Писарев А.А.¹, Матюхин С.И.², Сурма А.М.¹, Черников А.А.¹, Electrical characteristics of fast diodes with soft recovery,
   ¹ЗАО «Протон-Электротекс», г. Орёл, ²Госуниверситет-УНПК
10. Koziol Z., Aestimo quantum mechanical software for modeling quantum wells in nanoelectronics,
    TU Rzeszow, Polska

website http://www.tcad.com is up and running

The www.tcad.com website promoting open source Technology Computer Aided Design and posting related news is up and running. Among other news there is also update of the DEVSIM Open Source TCAD Simulator which is available for download at SourceForge, now.  Packages are available for:

• Mac OS X Mavericks
• Red Hat 6.5
• Ubuntu 12.04

For more information about the project, including source code availability, please visit DEVSIM webpage. Additional resource are also available at the TCADCentral 

[source]

Custom IC Design & Device Modeling - Tools and Technologies

Synopsys University Symposium

Friday, March 7; 9:00 a.m. to 5:30 p.m; The Lalit New Delhi Hotel

The Synopsys University Symposiums are for members of the academic community to get the latest information on design automation solutions, methodologies and standards. These FREE technical seminars are a resource to help accelerate innovation. Join us at this symposium to learn how you can achieve the highest value and productivity from your Synopsys tool investment.

Device Modeling

With growing device and design complexity, device-circuit co-design is becoming an increasingly important area of research. Today, devices and circuits are designed and optimized together for superior performance, yield and reliability. Synopsys TCAD tools are indispensable for device design and optimization.

[Agenda on-line]

[Call for Papers] SISPAD2014

https://sites.google.com/site/sispad2014/

This is a call for papers for the 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD2014), to be held September 9-11, 2014, in Yokohama, Japan. This conference provides an opportunity for the presentation and discussion of the latest advances in modeling and simulation of semiconductor devices, processes, and equipment for integrated circuits.

Abstract submission deadline is March 31, 2014.

Workshops:
Two companion workshops will run concurrently prior to the start of the conference on Monday 8th September 2014:

• Workshop 1: Compact Modeling -Enabling Better Insight of Device Features-
  Organizer: Mitiko Miura-Mattausch (Hiroshima University)
• Workshop 2: Carrier Transport in Nano-MOS Transistors: Theory and Experiments(tentative)
  Organizer: Hideaki Tsuchiya (Kobe University) and Yoshinari Kamakura (Osaka University)

Plenary Speakers:

• Augusto Benvenuti (Micron Technology)
  Current status and future prospects of non-volatile memory modeling
• Massimo V. Fischetti (University of Texas at Dallas)
  Physics of electronic transport in low-dimensionality materials forfuture FETs
• Kimimori Hamada (Toyota Motor Corporation)
  TCAD challenge on development of power semiconductor devices for automotive applications

Invited Speakers:

• Mario Ancona (Naval Research Laboratory)
  Nonlinear thermoelectroelastic simulation of III-N devices
• Asen Asenov (University of Glasgow)
  Progress in the simulation of time dependent statistical variability in nano CMOS transistors
• Jean-Pierre Colinge (Taiwan Semiconductor Manufacturing Company)
  Nanowire transistors: pushing Moore's law to the limit
• Tibor Grasser (Vienna University of Technology)
  Advanced modeling of charge trapping: RTN, 1/f noise, SILC, and BTI
• Kohji Mitsubayashi (Tokyo Medical and Dental University)
  Novel biosensing devices for medical applications
• Christian Sandow (Infineon Technologies)
  Exploring the limits of the safe operation area of power semiconductor devices
• Mark Stettler (Intel Corporation)
  Device and process modeling: 20 years at Intel's other fab

DEVSIM is now open source

Juan Sanches of Devsim LLC (Austin, Texas) announced:

DEVSIM is now open source 

The source code for my device simulation software, DEVSIM, is now available for download. The core engine is released under the LGPL 3.0. I hope this software will be useful to the TCAD community and it is available for download from github:

https://github.com/devsim/devsim?goback=.gde_164417_member_223659152

Great. Looks very interesting. A lot of good code. Anyone here by chance has any experience with it?