[poster] Active Cantilever with Dual Actuator

Bartosz Pruchnik1, Fabian Dietrich2, Richard Subianto2, Katerina Ivanova2, Athulya K. Muraleedharan Bindu2, Hans-Georg Pietscher2, Javad Basseri2, Muralikrishnan Brajesh Kaimal2, Władysław Kopczyński1, Wojciech Godlewski1, Dominik Badura1, Piotr Putek1, Krzysztof Kwoka1, Piotr Smagowski1, Andrew Yacoot3, Tomasz Piasecki1, Fangzhou Xia4, Ivo W. Rangelow2 

Active Cantilever with Dual Actuator

52nd International Micro and Nano Engineering Conference

Sep. 21-24, 2026 Interlaken (CH)

MEN2026 Poster S05A-T2-P-5

1. Wrocław University of Science and Technology,

2. nano analytik GmbH, 

3. National Physical Laboratory

4. University of Texas at Austin

Abstract: Atomic Force Microscopy (AFM) is often limited by the speed and bandwidth of three main components: the cantilever, the scanner, and the controller. Recent microelectromechanical systems (MEMS) have improved the performance of the cantilever and scanner by combining high-speed active cantilevers with low-latency scanners. In this work, we present a standardized active cantilever design. The system combines a large cantilever that acts as a Z-axis actuator with a smaller active cantilever sensor that provides a bandwidth greater than 400kHz. The smaller cantilever is integrated into the larger structure, creating a compact and highly responsive device. We introduce a new active cantilever architecture that uses two integrated electrothermal actuators. One actuator is used for cantilever operation, while the second provides vertical (Z-axis) movement for surface tracking. This design allows AFM measurements to be performed without the need for an external piezoelectric z-actuator.

Acknowledgements: This work was supported by the European Union's Horizon Europe research and innovation program under the Marie Sklodowska-Curie grant agreement No 101072775, and by the National Science Centre, Poland (grant No. 2021/41/B/ST7/03144).

[paper] CMOS-First MEMS-last integration

Aron Michael, Ian Yao-Hsiang Chuang, Chee Yee Kwok and Kazuo Omaki

Low-thermal-budget electrically active thick polysilicon for CMOS-First MEMS-last integration

Microsystems & Nanoengineering (2024) 10:75

DOI: 10.1038/s41378-024-00678-5

* UNSW, Sydney, NSW 2052, Australia

Abstract: Low-thermal-budget, electrically active, and thick polysilicon films are necessary for building a microelectromechanical system (MEMS) on top of a complementary metal oxide semiconductor (CMOS). However, the formation of these polysilicon films is a challenge in this field. Herein, for the first time, the development of in situ phosphorus-doped silicon films deposited under ultrahigh-vacuum conditions (~10E−9 Torr) using electron-beam evaporation (UHVEE) is reported. This process results in electrically active, fully crystallized, low-stress, smooth, and thick polysilicon films with low thermal budgets. The crystallographic, mechanical, and electrical properties of phosphorus-doped UHVEE polysilicon films are studied. These films are compared with intrinsic and boron-doped UHVEE silicon films. Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and atomic force microscopy (AFM) are used for crystallographic and surface morphological investigations. Wafer curvature, cantilever deflection profile and resonance frequency measurements are employed to study the mechanical properties of the specimens. Moreover, resistivity measurements are conducted to investigate the electrical properties of the films. Highly vertical, high-aspect-ratio micromachining of UHVEE polysilicon has been developed. A comb-drive structure is designed, simulated, fabricated, and characterized as an actuator and inertial sensor comprising 20-μm-thick in situ phosphorus-doped UHVEE films at a temperature less than 500°C. The results demonstrate for the first time that UHVEE polysilicon uniquely allows the realization of mechanically and electrically functional MEMS devices with low thermal budgets.

Fig: Comb-drive fabrication: a Grow oxide; b deposit thick UHVEEPolySi; c electrical pads patterned; d pattern the comb-drive; e backside pattern; f DRIE of UHVEEPolySi; g STS ICP oxide and DRIE from backside; h Remove Cr using O2 plasma; i HF vapor etch

Acknowledgements: The authors wish to acknowledge the Australian National Fabrication Facility (ANFF) NSW node, the School of Photovoltaic & Renewable Energy Engineering (SPREE) and the Electron Microscope Unit at UNSW, where fabrication and film characterization were conducted. In addition, the authors acknowledge the financial support received from the School of Electrical Engineering & Telecommunications (EE) and UNSW Sydney.

[paper] MEMS pressure sensors

Xiangguang Han, Mimi Huang, Zutang Wu, Yi Gao, Yong Xia, Ping Yang, Shu Fan, Xuhao Lu, Xiaokai Yang, Lin Liang, Wenbi Su, Lu Wang, Zeyu Cui, Yihe Zhao, Zhikang Li, Libo Zhao

and Zhuangde Jiang

Advances in high-performance MEMS pressure sensors: design, fabrication, and packaging.

Microsyst Nanoeng 9, 156 (2023) 

DOI:10.1038/s41378-023-00620-1

1 State Key Laboratory for Manufacturing Systems Engineering, Xi’an Jiaotong University, Xi’an 710049, China
2 International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi’an Jiaotong University, Xi’an 710049, China.
3 School of Mechanical Engineering, Xi’an Jiaotong University, Xi’an 710049, China.
4 Northwest Institute of Nuclear Technology, Xi’an 710024, China

Abstract: Pressure sensors play a vital role in aerospace, automotive, medical, and consumer electronics. Although microelectromechanical system (MEMS)-based pressure sensors have been widely used for decades, new trends in pressure sensors, including higher sensitivity, higher accuracy, better multifunctionality, smaller chip size, and smaller package size, have recently emerged. The demand for performance upgradation has led to breakthroughs in sensor materials, design, fabrication, and packaging methods, which have emerged frequently in recent decades. This paper reviews common new trends in MEMS pressure sensors, including minute differential pressure sensors (MDPSs), resonant pressure sensors (RPSs), integrated pressure sensors, miniaturized pressure chips, and leadless pressure sensors. To realize an extremely sensitive MDPS with broad application potential, including in medical ventilators and fire residual pressure monitors, the “beam-membrane-island” sensor design exhibits the best performance of 66 μV/V/kPa with a natural frequency of 11.3 kHz. In high-accuracy applications, silicon and quartz RPS are analyzed, and both materials show ±0.01%FS accuracy with respect to varying temperature coefficient of frequency (TCF) control methods. To improve MEMS sensor integration, different integrated “pressure + x” sensor designs and fabrication methods are compared. In this realm, the intercoupling effect still requires further investigation. Typical fabrication methods for microsized pressure sensor chips are also reviewed. To date, the chip thickness size can be controlled to be <0.1 mm, which is advantageous for implant sensors. Furthermore, a leadless pressure sensor was analyzed, offering an extremely small package size and harsh environmental compatibility. This review is structured as follows. The background of pressure sensors is first presented. Then, an in-depth introduction to MEMS pressure sensors based on different application scenarios is provided. Additionally, their respective characteristics and significant advancements are analyzed and summarized. Finally, development trends of MEMS pressure sensors in different fields are analyzed.

Fig: High-sensitivity MDPS, on-chip amplified MDPS, and resonant MDPS.

Acknowledgements: This study was supported in part by the National Key Research and Development Program of China (2021YFB3203200) and the Natural Scienc Foundation of Shaanxi (2022JQ-554).

MINIMAL

"Minimal Fab Promotion Organization" (MINIMAL) aim is to establish a completely new production method called this minimal fab and initiating a process revolution in Japan. The mission is to further expand the application fields of Minimal Fab as the only organization in the world to support the spread and development of high-mix low-volume of microdevices such as semiconductors and MEMS as innovative industrial systems. We are aiming to become an innovation platform to promote small businesses using the Minimal Fab through collaboration among various industries such as various toolmakers, materials, parts and device users [ read more...]

[Book] More-than-Moore Devices and Integration for Semiconductors

More-than-Moore Devices and Integration

for Semiconductors

Editors: Francesca Iacopi and Francis Balestra

Publisher: Springer Cham

DOI: 10.1007/978-3-031-21610-7

This book provides readers with a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems with a broad range of functionalities that can be added to 3D microsystems, including flexible electronics, metasurfaces and power sources. The book also includes examples of applications for brain-computer interfaces and event-driven imaging systems.

• Provides a comprehensive, state-of-the-art reference for miniaturized More-than-Moore systems;
• Covers functionalities to add to 3D microsystems, including flexible electronics, metasurfaces and power sources;
• Includes current applications, such as brain-computer interfaces, event - driven imaging and edge computing.

Table of contents (7 chapters)

• Front Matter Pages i-xiv
• Energy Harvesters and Power Management Pages 1-45
  Michail E. Kiziroglou, Eric M. Yeatman
• SiC and GaN Power Devices Pages 47-104
  Konstantinos Zekentes, Victor Veliadis, Sei-Hyung Ryu, Konstantin Vasilevskiy, Spyridon Pavlidis, Arash Salemi et al.
• Flexible and Printed Electronics Pages 105-125
  Benjamin Iñiguez
• Terahertz Metasurfaces, Metawaveguides, and Applications Pages 127-156
  Wendy S. L. Lee, Shaghik Atakaramians, Withawat Withayachumnankul
• Mechanical Robustness of Patterned Structures and Failure Mechanisms
  Ehrenfried Zschech, Maria Reyes Elizalde Pages 157-189
• Neuromorphic Computing for Compact LiDAR Systems Pages 191-240
  Dennis Delic, Saeed Afshar
• Integrated Sensing Devices for Brain-Computer Interfaces Pages 241-258
  Tien-Thong Nguyen Do, Ngoc My Hanh Duong, Chin-Teng Lin

Acknowledgements: We would like to thank the following colleagues for their help in peer-reviewing this book’s material: Dr. Yang Yang and Dr. Diep Nguyen (University of Technology Sydney, Australia); Prof. Xuan-Tu Tran (Vietnam National University Hanoi), Prof. Gustavo Ardila and Prof. Pascal Xavier (University Grenoble Alpes, France); and Prof. Edwige Bano (Grenoble INP, France). FI would also like to acknowledge support from the Australian Research Council Centre of Excellence in Transformative MetaOptical Systems (TMOS, CE200100010).

Francesca Iacopi, Ultimo, NSW, Australia 

Francis Balestra, Grenoble, France 

[paper] MEMS Sensors Reliability

M. Hommel^a, H. Knab^a, S. Galal Yousef^b

Reliability of automotive and consumer MEMS sensors - An overview

Microelectronics Reliability (114252) online Oct. 11, 2021

DOI: 10.1016/j.microrel.2021.114252

a Robert-Bosch-GmbH, Automotive Electronics, Tübinger Str. 123, 72762 Reutlingen, Germany
b Bosch Sensortec GmbH, Gerhard-Kindler-Str. 9, 72770 Reutlingen, Germany

Abstract: In our daily life, sensors play more and a more important role. They take over many functions in the automotive world as well as in consumer products with an increasing dissemination of the internet of things. In addition, they offer a broad variety of new applications. Sensors are typically build up in a package including a sensing element (e.g. micromechanical structures in acceleration sensors or membranes in gas sensors, etc.) and a microelectronic chip to evaluate the sensor data. This article will give an overview, how the reliability of such a system is validated. The challenges for reliability in terms of requirements and qualification for automotive and consumer applications will be discussed. The complex structure of a sensor module in combination with a broad variety of materials implies many possible failure mechanisms, which have to be considered. Some relevant sensor failure mechanisms caused by mechanical shock, thermo-mechanical stress and the influence of humidity on sensor reliability will be shown. The challenges for describing the influence of humidity on the sensor lifetime by an acceleration model will be discussed in detail. Finally, the paper will give an outlook for the reliability challenges of future sensor applications.

Fig: Loads on a MEMS sensor module.

[paper] 11.8 GHz Fin Resonant Body Transistor

Analysis and Modeling of an 11.8 GHz Fin Resonant Body Transistor 

in a 14nm FinFET CMOS Process 

Udit Rawat, Student Member, IEEE, Bichoy Bahr*, Member, IEEE, 

and Dana Weinstein, Senior Member, IEEE

arXiv:2107.04502v1 [physics.app-ph] 9 Jul 2021

 

Department of Electrical Engineering, Purdue University, West Lafayette USA

*Kilby Labs - Texas Instruments, Dallas, TX, USA.

Abstract: In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking, and sensing applications. Analysis of the phononic dispersion characteristics of the device, which informs the model development, shows the presence of polarization exchange due to the periodic nature of the back-end-of-line (BEOL) metal PnC. An eigenfrequency-based extraction process, applicable to resonators based on electrostatic force transduction, has been used to model the resonance cavity. Augmented forms of the BSIM-CMG (Common Multi-Gate) model for FinFETs are used to model the drive and sense transistors in the fRBT. This model framework allows easy integration with the foundry-supplied process design kits (PDKs) and circuit simulators while being flexible towards change in transduction mechanisms and device architecture. Ultimately, the behaviour is validated against RF measured data for the fabricated fRBT device under different operating conditions, leading to the demonstration of the first complete model for this class of resonant device integrated seamlessly in the CMOS stack.

Fig: Complete 3D FEM Simulation model depicting two adjoining fRBT unit cells. Mx (x=1-3) and Cy (y=4-6) represent the first 6 metal levels that form a part of the BEOL PnC.

Acknowledgement: This work was supported in part by the DARPA MIDAS Program.

 

[paper] MEMS thermal actuators

Longchang Ni, Ryan M. Pocratsky and Maarten P. de Boer 

Demonstration of tantalum as a structural material for MEMS thermal actuators 

Microsyst Nanoeng 7, 6 (2021) 

DOI: 10.1038/s41378-020-00232-z 

CMU Mechanical Engineering Dept., Pittsburgh, PA, USA

Abstract: This work demonstrates the processing, modeling, and characterization of nanocrystalline refractory metal tantalum (Ta) as a new structural material for microelectromechanical system (MEMS) thermal actuators (TAs). Nanocrystalline Ta films have a coefficient of thermal expansion (CTE) and Young’s modulus comparable to bulk Ta but an approximately ten times greater yield strength. The mechanical properties and grain size remain stable after annealing at temperatures as high as 1000 °C. Ta has a high melting temperature (Tm = 3017 °C) and a low resistivity (ρ = 20 µΩ cm). Compared to TAs made from the dominant MEMS material, polycrystalline silicon (polysilicon, Tm = 1414 °C, ρ = 2000 µΩ cm), Ta TAs theoretically require less than half the power input for the same force and displacement, and their temperature change is half that of polysilicon. Ta TAs operate at a voltage 16 times lower than that of other TAs, making them compatible with complementary metal oxide semiconductors (CMOS). We select α-phase Ta and etch 2.5-μm-thick sputter-deposited films with a 1 μm width while maintaining a vertical sidewall profile to ensure in-plane movement of TA legs. This is 25 times thicker than the thickest reactive-ion-etched α-Ta reported in the technical literature. Residual stress sensitivities to sputter parameters and to hydrogen incorporation are investigated and controlled. Subsequently, a V-shaped TA is fabricated and tested in air. Both conventional actuation by Joule heating and passive self-actuation are as predicted by models.

Fig: Top view of freestanding Ta thermal actuator. In-plane deflection δ ≈ 5µm after hydrogen degas step

Acknowledgements: This work was partially supported by the US National Science Foundation (NSF) grant number CMMI-1635332. We also acknowledge the Kavcic-Moura Endowment Fund for the support. We would like to thank the executive manager, Matthew Moneck, and all the staff members of the CMU Eden Hall Foundation Cleanroom for their guidance and advice on equipment usage and process development. We also acknowledge the use of the Materials Characterization Facility at Carnegie Mellon University under grant # MCF-677785

[paper] Radiation testing of a 6-axis MEMS inertial navigation unit

Radiation testing of a commercial 6-axis MEMS inertial navigation unit at ENEA Frascati proton linear accelerator

G. Bazzano^a,b, A. Ampollini^a, F. Cardelli^a, F. Fortini^a, P. Nenzi^a, G.B. Palmerini^b, L. Picardi^a, 

L. Piersanti^a, C. Ronsivalle^a, V. Surrenti^a, E. Trinca^a, M. Vadrucci^a, M. Sabatini^c

Advances in Space Research (2020)

DOI: 10.1016/j.asr.2020.11.031

^aENEA, Via Enrico Fermi 45, Frascati, Italy

^bScuola di Ingegneria Aerospaziale, La Sapienza Università di Roma, Italy

^cDipartimento di Ingegneria Astronautica, Elettrica ed Energetica, La Sapienza Università di Roma, Italy 

Abstract: We present the first results of a novel collaboration activity between ENEA Frascati Particle Accelerator Laboratory and University La Sapienza Guidance and Navigation Laboratory in the field of Radiation Hardness Assurance (RHA) for space applications. The aim of this research is twofold: (a) demonstrating the possibility to use the TOP-IMPLART proton accelerator for radiation hardness assurance testing, developing ad hoc dosimetric and operational procedures for RHA irradiations; (b) investigating system level radiation testing strategies for Commercial Off The Shelf (COTS) components of interest for SmallSats space missions, with focus on devices and sensors of interest for guidance, navigation and control, through simultaneous exploration of Total Ionizing Dose (TID), Displacement Damage (DD) dose and Single-Event Effects (SEE) with proton beams. A commercial 6-axis integrated Micro Electro-Mechanical Systems (MEMS) inertial navigation system (accelerometer, gyroscope) was selected as first Device Under Test (DUT). The results of experimental tests aimed to define an operational procedure and the characterization of radiation effects on the component are reported, highlighting the consequence of the device performance degradation in terms of the overall navigation system accuracy. Doses up to 50 krad(Si) were probed and cross sections for Single-Event Functional Interrupt (SEFI) evaluated at a proton energy of 30 MeV. 

Fig: Polyedric support for MEMS accelerometer characterization

[paper] Cross Domain Modeling of a Meander Beam MEMS Accelerometer

Cross Domain Modeling of a Meander Beam MEMS Bulk Micromachined Accelerometer

in COMSOL Multiphysics® and SPICE

Mahdieh Shojaei Baghini*

*Department of Mechanical, Maritime and Materials Engineering, Delft University of Technology, Delft, Netherlands

Abstract: This paper presents the design of a bulk Silicon MEMS single-axis 8-beam accelerometer utilizing meander beams in the Structural Mechanics and MEMS Module of COMSOL Multiphysics®. To obtain further insights into the design of the accelerometer, an electrical lumped element model of the structure is derived and represented in SPICE. Quantities such as eigenfrequencies and proofmass displacement have been extracted from COMSOL Multiphysics® as well as analytical studies. The effects of parasitic frequencies in the structure are observed by automatic tilting of the accelerometer at higher order eigenfrequencies due to finite off-axis stiffness coefficients. In order to mathematically quantify the response of the accelerometer arising due to parasitic frequencies, the transient damping response has been derived in COMSOL Multiphysics® as well as SPICE, and the differences are highlighted. Finally, the eigenfrequencies of the meanderbeam accelerometer have been compared with that of a simple-beam accelerometer and the validity of small deflection theory is tested for the lumped model approach. While the target damping factor of the accelerometer was 0.7, the obtained damping factor increased to 1.1 due to the aforementioned parasitic frequencies and reduction in the resonance frequency of the sensor. This effect was precisely captured during the COMSOL Multiphysics® simulation.

Fig: The designated sensor is damped using plates placed at a distance equal to h0; its a) electrical circuit equivalent of squeeze-film damped accelerometer; b) electrical circuit considering symmetric damping; c) simplified equivalent circuit for gap height derivation.

[book] MEMS Fundamentals

MEMS Fundamentals

with ANSYS simulation of basic sensors and actuators

Michał Szermer, Andrzej Napieralski (Eds.)

ISBN eBook: 978-83-66287-64-8, 9788366287648

Wydawnictwo Politechniki Łódzkiej

Intro: The purpose of this book is to help universities and individuals extend their traditional microelectronics education into the MEMS area. It is organized in a set of tutorials primarily aimed at electronic engineering students and practicing engineers. Based on carefully selected examples of sensors and actuators, it introduces the reader to device operating principles, modeling approaches, simulation tools and design methodologies.

Book Contents

Preface
Chapter 1. INTRODUCTION
1.1. Program description
1.2. References
Chapter 2. SILICON MEMBRANE
2.1. Introduction
2.2. Modeling
2.2.1. Getting started
2.2.2. Setting system of units
2.2.3. Selecting finite element types
2.2.4. Setting material properties
2.2.5. Defining geometry
2.2.6. Meshing
2.2.7. Selecting analysis type
2.2.8. Applying boundary conditions
2.2.9. Running analysis
2.2.10. Viewing simulation results
2.3. Tasks for students
2.4. References
Chapter 3. THERMAL ACTUATOR
3.1. Introduction
3.2. Modeling
3.2.1. Getting started
3.2.2. Defining geometry
3.2.3. Setting material properties
3.2.4. Setting finite element types
3.2.5. Meshing
3.2.6. Selecting analysis type
3.2.7. Applying boundary conditions
3.2.8. Running analysis
3.2.9. Viewing simulation results
3.3. Automation of MEMS thermal actuator design
3.3.1. Simulation of thermal actuator with varying heater temperature
3.3.2. Viewing and saving simulation results using POST1 postprocessor
3.3.3. Plotting relationships
3.3.4. Tasks for students
3.4. References
Chapter 4. ELECTROTHERMAL ACTUATOR
4.1. Introduction
4.2. Modeling
4.2.1. Getting started
4.2.2. Defining geometry
4.2.3. Setting finite element types
4.2.4. Setting material properties
4.2.5. Meshing
4.2.6. Applying boundary conditions
4.2.6.1. Clamp
4.2.6.2. Temperature
4.2.6.3. Voltage
4.2.7. Selecting analysis type
4.2.8. Running analysis
4.2.9. Viewing simulation results
4.2.9.1. Displacement
4.2.9.2. Voltage
4.2.9.3. Temperature
4.3. Tasks for students
4.4. References
Chapter 5. ACCELEROMETER
5.1. Introduction
5.2. Modeling
5.2.1. Getting started
5.2.2. Defining geometry
5.2.3. Setting finite element types
5.2.4. Setting material properties
5.2.5. Meshing
5.2.6. Applying boundary conditions
5.2.7. Selecting analysis type
5.2.8. Running analysis
5.2.9. Viewing simulation results
5.3. Tasks for students
5.4. References
Chapter 6. SILICON MEMBRANE IN WORKBENCH
6.1. Membranes
6.2. Membrane modeling
6.3. Design and modeling of the membrane
6.3.1. Introduction to ANSYS
6.3.2. Getting started
6.3.3. Defining geometry
6.3.4. Setting up the simulation
6.3.5. Results processing
6.4. Exercises for Students
6.4.1. Laboratory tasks
6.4.2. Individual tasks
6.5. References
Chapter 7. MICROBOLOMETER IN WORKBENCH
7.1. Microbolometer principle
7.2. Microbolometer design with ANSYS Workbench
7.2.1. Getting started
7.2.2. Defining geometry
7.2.3. Adding materials’ data to the project
7.2.4. Electrical simulation
7.2.5. Thermal simulation
7.2.6. Exercises for students
7.2.7. Transient thermal simulation
7.2.8. Exercises for students
7.3. References

[paper] RF-MEMS for Future Mobile Applications: Experimental Verification of a Reconfigurable 8-Bit Power Attenuator up to 110 GHz

RF-MEMS for Future Mobile Applications: Experimental Verification of a Reconfigurable 8-Bit Power Attenuator up to 110 GHz
Jacopo Iannacci¹ and Christian Tschoban^2
1Center for Materials and Microsystems - CMM, Fondazione Bruno Kessler , Trento, ITALY
²Fraunhofer Institut für Zuverlässigkeit und Mikrointegration IZM , Berlin, GERMANY
Journal of Micromechanics and Microengineering
Accepted Manuscript online 8 February 2017

Abstract

RF-MEMS technology is indicated as a key enabling solution to realise the high-performance and highly-reconfigurable passive components that future 5G communication standards will demand for. In this work, we present, test and discuss a novel design concept of an 8-bit reconfigurable power attenuator manufactured in the RF-MEMS technology available at the CMM-FBK, in Italy. The device features electrostatically controlled MEMS ohmic switches, in order to select/deselect resistive loads (both in series and shunt configuration) that attenuate the RF signal, and comprises 8 cascaded stages (i.e. 8-bit), thus implementing 256 different network configurations. Fabricated samples are measured (S-parameters) from 10 MHz to 110 GHz in a wide range of different configurations, and modelled/simulated in Ansys HFSS. The device exhibits attenuation levels (S21) in the range from -10 dB to -60 dB, up to 110 GHz. In particular, the S21 shows flatness from 15 dB down to 3-5 dB, from 10 MHz to 50 GHz, while less linear traces up to 110 GHz. Comprehensive discussion is developed around the Voltage Standing Wave Ratio (VSWR), employed as quality indicator for the attenuation levels. Margins of improvement at design level are also discussed, in order to overcome the limitations of the presented RF-MEMS device. The results of S-parameter simulations performed in the Quite Universal Circuit Simulator (QUCS: qucs.sourceforge.net) for a few significant configurations of the RF-MEMS attenuator from 10MHz to 110GHz are reported, too. [read more...]

MNE&MS 2016: Seminar Announcement

MNE&MS 2016

Seminar Announcement

The 8th traditional seminar “Computer simulation and design of micro-and nanoelectronics and micro-electromechanical systems” (MNE&MS 2016), organized by the Nanotechnology Center “OrelNano” and Physics Department will take place at the Orel State University after Ivan Turgenev, 29 Naugorskoe Shosse (in 212 Auditorium), Orel, Russia, on April 29th 2016 from 10am to 5pm.

The main objective of the MNE&MS 2016 is to allow regional electronics industry companies and Universities present results in research and development in micro-and nanoelectronics, power electronics, and microelectromechanical systems (MEMS) to potential customers, interested professionals, and students. Hence, the scope of seminar covers the most of Key Enabling Technologies (KETs), that is the basis for innovations in a range of products across all industrial sectors.

The Seminar also aims to introduce to Companies and Universities the latest developments in the electronics development automation (EDA), in particular in technology computer aided design (TCAD) and in compact modeling. Seminar includes session with oral presentations, poster session and an Exhibition of products of participating companies.

Selected papers will be recommended for publication in journals “Fundamental and Applied Problems of Technics and Technology” and “Information Systems and Technologies”. In addition, selected papers will be recommended for publication in proceedings of “Nanosystems, nanomaterials and nanotechnologies” of the XIV International Scientific Practical Internet – Conference “Energy and Resource Saving – XXI Century”. Information about previous regional seminars is available online.

Will be coffee breaks during seminar. In campus there is students diner and hotel (Naugorskoe Shosse 29 A). On April 30, Saturday, Organizing Committee can organize trip to the Spasskoye-Lutovinovo - State Memorial and Natural Reserve Museum of famous Russian writer Ivan Turgenev.

Our University located in South-West of Central Russia in historical town Orel (or Oryol), that was founded in 1566. Orel placed on Oka and Orlik rivers junction in 382 km from Moscow and has beautiful surroundings with number of historical landmarks.

Contact phones: +79208250040
Hotel reception phone is +7(4862)419882 or +79038816347
Official language of seminar – Russian.
There is no registration fee.

Micro&Nano 2015 - 2nd Announcement

6th Micro & Nano Conference on Micro - Nanoelectronics, Nanotechnologies and MEMs
4-7 October, 2015, Athens, Greece
http://conference-micronano2015.micro-nano.gr

Second Announcement

The "Micro&Nano 2015" Conference will be held at the Fenix Hotel, in Glyfada, Athens, Greece. The Best Western Hotel Fenix is conveniently located in Glyfada, an attractive resort in the south coast of Athens. More details on the Conference venue can be found on the conference website:

<http://conference-micronano2015.micro-nano.gr>

Conference Topics:

• Micro and Nano- Fabrication
• Materials for Electronics, Photonics and Sensors
• Electronic, Optoelectronic and Photonic Devices
• Sensors and Actuators

All abstracts should not exceed the limit of 300 words. Please follow the abstract template that can be found here. The deadline for abstract submission is on 30 June 2015.

The Conference abstracts will be published in the "Abstract Book" that will be distributed to all the participants, at the beginning of the Conference. Selected papers will be published, after peer-review, in special issues of the following international journals:

• Nanoscale Research Letters (the nanoscience related articles)
• Microelectronic Engineering

[read more: http://conference-micronano2015.micro-nano.gr]

LETI Devices Workshop

The Churchill Hotel - 1914 Connecticut Ave. NW (across from the Hilton)

Washington D.C. 6-9 p.m on December 8, 2013

Inventing the future together: a stimulating discussion of our vision for silicon nanotechnologies in the next 10 years followed by a networking cocktail. Program is as follow:

• Introduction (10min)
  Jean-René Lequepeys; VP Silicon Components Division 
• Lithography cost-effective solutions for 1X nodes (15min)
  Serge Tedesco; Lithography Program Manager 
• 3D: Dream and reality (15 min)
  Mark Scannell; Senior Business Development Manager 
• High-performance and reliable resistive memories embedded in advanced logic CMOS technologies (15min)
  Barbara de Salvo; Advanced Memories Fellow
• M&NEMS platforms: an enabler for the next generation of sensors in consumer electronics (15min)
  Hugues Metras; VP Strategic Partnerships, North America
• CMOS technologies: our most power efficient solution today and our vision toward 10nm node and beyond (15 min)
  Maud Vinet; Advanced CMOS Manager

[read more...]