Apr 18, 2024

[IEEE SSCS] “PICO” Open-Source Chipathon

IEEE SSCS “PICO” Open-Source Chipathon
Automating Analog Layout
– Sign-Up Deadline: May 10, 2024 –

The IEEE Solid-State Circuits Society is pleased to announce its fourth open-source integrated circuit (IC) design contest under the umbrella of its PICO Program (Platform for IC Design Outreach). While this contest is open to anyone (no restrictions), we encourage the participation of pre-college students, undergraduates, and geographical regions that are underrepresented within the IC design community. 


The goal of this year’s event is to advance the automatic generation and open sharing of analog circuit layout cells to increase our community’s design productivity and to catch up with other fields where sharing and automation is a key enabler of progress (e.g., in machine learning).

Die photo in background courtesy of IBM

Contest Outline

  1. Interested individuals sign up using this form by May 10, 2024.
  2. Phase 1 (~June): Through a series of weekly meet-ups and training sessions, the participants learn to create basic one- or two-transistor layout generators using Python and open-source CMOS PDKs. Using Jupyter Notebooks hosted on Google Colab allows anyone with an internet connection to participate - no downloads or installations required! Relevant circuit examples can be found in [1], [2]. We will leverage code modules available with the OpenFASoC [3] environment.
  3. Phase 2 (~July): Interested participants define larger layout building blocks that they wish to automate (examples: comparator, bandgap, phase interpolator, OTA). Teaming among participants is encouraged to maximize collaboration and learning).
  4. Phase 3 (~August-September): Participants implement their generators and submit sample layouts and test structures for potential tape-out to an open-source MPW (tentatively SKY130).
  5. Phase 4 (~October-November): A jury evaluates the created generators/layouts and selects the test structures that will be taped out. The teams work together to assemble a shared database with all the designs and to complete the tapeout. Ideally, this phase will involve automated verification through CACE [4] or a similar tool.
  6. Phase 5 (TBD): The designs will be tested using lab measurements by a subset of participants and SSCS volunteers with access to lab facilities. Some of the test setups may be available for remote characterization. The obtained measurement data will be added to the repositories containing the layout generators.

 References

[1] H. Pretl, “Fifty Nifty Variations of Two-Transistor Circuits,” MOS-AK Workshop Spring 2022, URL: https://www.mos-ak.org/spring_2022/presentations/Pretl_Spring_MOS-AK_2022.pdf.
[2] H. Pretl and M. Eberlein, "Fifty Nifty Variations of Two-Transistor Circuits: A tribute to the versatility of MOSFETs," in IEEE Solid-State Circuits Magazine, vol. 13, no. 3, pp. 38-46, Summer 2021, URL: https://ieeexplore.ieee.org/document/9523464.
[3] OpenFASoC: Fully Open-Source Autonomous SoC Synthesis using Customizable Cell-Based Synthesizable Analog Circuits, https://github.com/idea-fasoc/OpenFASOC/.
[4] Circuit Automatic Characterization Engine, URL: https://github.com/efabless/cace.

Apr 16, 2024

[paper] SiC Power MOSFET SPICE modelling

Akbar Ghulam
Accurate & Complete behaviourial SPICE modelling 
of commercial SiC Power MOSFET OF 1200V, 75A
25th EuroSimE, Catania, Italy, 2024, pp. 1-4,
DOI: 10.1109/EuroSimE60745.2024.10491420

* UNIPA Palermo (IT)

Abstract: Silicon Carbide (SiC) is proved to be an excellent replacement for Silicon in high voltage and high frequency applications due to its electro-thermal properties. Since SiC power MOSFETs have only recently been more widely available commercially, accurate simulation models are immediately required to forecast device behavior and facilitate circuit designs. The goal of this paper is to develop an accurate LTSPICE model based on a modified Enz-Krumenacher-Vittoz (EKV), MOSFET model for a 1200V, 30mΩ & 75ASiC power MOSFET “SCTW100N120G2AG” provided by STMicroelectronics that is currently on the market. The modified EKV model outperforms the reduced quadratic model by describing MOSFET behavior over different zones which are weak, moderate, and strong inversion zones with only a single equation. A wide range of experimental data was used to build the model's parameters. To estimate device performance in high frequency switching applications, the model has been expanded to include package parasitic components that include parasitic capacitances. The model's static and transient properties were simulated, and the results were compared with those acquired from the actual device.
FIG: The SiC MOSFET's circuit schematic utilizing a modified EKV model

Acknowledgements: We would like to thank STMicroelectronics, as for completion of this study has been greatly aided by their participation and availability of relevant data.

Apr 15, 2024

[course] MEAD @ EPFL

Live Course @ EPFL, Lausanne, Switzerland
JUNE 17-21, 2024

Registration Deadline: May 17, 2024 >> REGISTER

MONDAY, June 17

8:30 am-12:00 pmMOS Transistor Modeling for Low-Voltage and Low-Power Circuit DesignChristian Enz
1:30-5:00 pmDesign of Low-Power Analog Circuits using the Inversion CoefficientChristian Enz

TUESDAY, June 18

8:30 am-12:00 pmNoise Performance of Elementary Circuit BlocksBoris Murmann
1:30-5:00 pmOpamp Topologies and Design FundamentalsBoris Murmann

WEDNESDAY, June 19

8:30-10:00 amLow-Power High Efficiency OpAmp DesignKlaas Bult
10:30 am-12:00 pmLow-Power High Efficiency Residue AmplifiersKlaas Bult
1:30-3:00 pmAnalog Design Methodology and Practical Techniques for Frequency CompensationVadim Ivanov
3:30-5:00 pmEnergy Efficient Voltage References, Biasing in Analog Systems and Current SourcesVadim Ivanov

THURSDAY, June 20

8:30-10:00 amPower Dissipation in ADC Buidling BlocksKlaas Bult
10:30 am-12:00 pmPower Dissipation in ADCsKlaas Bult
1:30-5:00 pmMicropower ADCsKofi Makinwa

FRIDAY, June 21

8:30 am-12:00 pmEnergy Efficient Sensor InterfacesTaekwang Jang
1:30-5:00 pmLow-Power Frequency Reference CircuitsTaekwang Jang
1:30-5:00 pmPower Management With Nanoampere Consumption and Efficient Energy HarvestingVadim Ivanov

Apr 14, 2024

GDR SOC2 IEEE CASS

GDR SOC2 - IEEE CASS
“Tour de France” - Grenoble - 19 April 2024
Open Hardware: the new road?
INP; 46 Av Felix Viallet 38000 Grenoble – Amphi Gosse

8:30  Prof. Boris Murmann (U. of Hawaii) 
Re-Energizing Analog Design using the Open-Source Ecosystem. 
9:30  Aurélien Nicolet (CIME-P)
The French platform supporting open hardware
10:00 Krzysztof Herman (IHP)
 IHP Open Source PDK -  sharing experience after one year of development.
11:00 75th anniversary of CAS Society Keynote by Prof. Ricardo Reis.
12:00 Lunch & Cocktail
14:00 Prof. Ricardo Reis (UFRGS)
 Why joining IEEE CAS Society?
14:30 Jean-Paul Chaput (LIP6 – Sorbonne University)
 Coriolis, The European Open Hardware Project 
15:30 Dr. Leonardo Gomes (TIMA - UGA)
 The first 60 GHz circuit designed with open hardware platform
16:00 Deni Alves (UFSC)
 ACM, a design-oriented model for open tools

Inscription Gratuite: à laurence.ben-tito@univ-grenoble-alpes.fr  








Apr 12, 2024

[paper] Heterojunction Nano-HEMT

G. Purna Chandra Rao1, Trupti Ranjan Lenka2, Valeria Vadalà3
and Hieu Pham Trung Nguyen4
Characteristics Study of Heterojunction III-Nitride/β-Ga2O3 Nano-HEMT for THz Applications
Eng. Res. Express (2024) in press
DOI: 10.1088/2631-8695/ad3db1

1 Electronics and Communication Engineering, NIT Silchar, Assam (IN)
2 Electronics and Communication Engineering, NIT Silchar, Assam (IN)
3 Physics, University of Milan-Bicocca (IT)
4 Electrical and Computer Engineering, Texas Tech University (USA)

Abstract: In this research study, a recessed gate III-Nitride high electron mobility transistor (HEMT) grown on a lattice matched β-Ga2O3 substrate is designed. This research investigation aims to enhance DC and RF performance of AlGaN/GaN HEMT, and minimize the short-channel effects by incorporating an AlGaN back layer and field plate technique, which can enhances electron confinement in two-dimensional electron gas (2DEG). A precise comparison analysis is done on the proposed HEMT’s input characteristics, output characteristics, leakage current characteristics, breakdown voltage properties, and RF behaviour in presence and absence of AlGaN back layer in regard to field plate configuration. The inclusion of back barrier aids in raising the level of conduction band, which reduces leakage loss beneath the buffer, and aids in keeping the 2DEG to be confined to a narrow channel. Furthermore, the field plate design offers an essential electric field drift between gate and drain, resulting to enhanced breakdown voltage characteristics.
FIG : Epitaxial schematic illustration of suggested III-nitride HEMT with the proposed back barrier and field plates.

Acknowledgment : The authors acknowledge SERB (Science and Engineering Research Board), Govt. of India sponsored Mathematical Research Impact Centric Support (MATRICS) project no. MTR/2021/000370 for support.