Semiconductor Devices and Technologies for Future Ultra Low Power Electronics (1st ed.)
Nirmal, D., Ajayan, J., & Fay, P.J. (Eds.)
CRC Press. (2021).
DOI: 10.1201/9781003200987
Abstract: This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided.
Contents:Preface viiEditors ixContributors xi
Chapter 1: An Introduction to Nanoscale CMOS Technology Transistors: A Future Perspective; pp: 1
Kumar Prasannajit Pradhan
Chapter 2: High-Performance Tunnel Field-Effect Transistors (TFETs) for Future Low Power Applications; pp: 29
Ribu Mathew, Ankur Beohar, and Abhishek Kumar Upadhyay
Chapter 3: Ultra Low Power III-V Tunnel Field-Effect Transistors; pp: 59
J. Ajayan and D. Nirmal
Chapter 4: Performance Analysis of Carbon Nanotube and Graphene Tunnel Field-Effect Transistors; pp: 87
K. Ramkumar, Singh Rohitkumar Shailendra, and V. N. Ramakrishnan
Chapter 5: Characterization of Silicon FinFETs under Nanoscale Dimensions; pp: 115
Rock-Hyun Baek and Jun-Sik Yoon
Chapter 6: Germanium or SiGe FinFETs for Enhanced Performance in Low Power Applications; pp: 129
Nilesh Kumar Jaiswal and V. N. Ramakrishnan
Chapter 7: Switching Performance Analysis of III-V FinFETs .; pp: 155
Arighna Basak, Arpan Deyasi, Kalyan Biswas, and Angsuman Sarkar
Chapter 8: Negative Capacitance Field-Effect Transistors to Address the Fundamental Limitations in Technology Scaling; pp: 187
Harsupreet Kaur
Chapter 9: Recent Trends in Compact Modeling of Negative Capacitance Field-Effect Transistors; pp: 203
Shubham Tayal, Shiromani Balmukund Rahi, Jay Prakash Srivastava, and Sandip Bhattacharya
Chapter 10 Fundamentals of 2-D Materials; pp: 227
Ganesan Anushya, Rasu Ramachandran, Raj Sarika, and Michael Benjamin
Chapter 11 Two-Dimensional Transition Metal Dichalcogenide (TMD) Materials in Field-Effect Transistor (FET) Devices for Low Power Applications; pp 253
R. Sridevi and J. Charles Pravin
Index pp: 289
