Etienne Becle, Philippe Talatchian, Guillaume Prenat, Lorena Anghel, Ioan-Lucian Prejbeanu
51st European Solid-State Device Research Conference; Grenoble 2021
CEA-Spintec (F)
Abstract: Spin-Transfer Torque Magnetic Tunnel Junctions (STT-MTJ) are devices featuring stochastic properties. They are promising candidates for non-volatile memory or true random number generators. To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and meets the needs of fast execution time. The relevance of such a model together with its fast execution velocity are illustrated with a bitstream generator.
Fig: Schematic representation of the implemented algorithm
Acknowledgement: This work is supported by the French National Research Agency in the framework of the "Investissements d’avenir” program (ANR-15-IDEX-02).
