[paper] InP HEMTs for future THz applications

J.Ajayan^a, D.Nirmal^b, Ribu Mathew^c, Dheena Kurian^d, P.Mohankumar^e, L.Arivazhagan^b, D.Ajitha^f

A critical review of design and fabrication challenges in InP HEMTs 

for future terahertz frequency applications

Materials Science in Semiconductor Processing

Volume 128, 15 June 2021, 105753

  
a SR University, Warangal, Telangana, India
b Karunya Institute of Technology and Sciences, Coimbatore, Tamilnadu, India
c VIT Bhopal University, Bhopal, Madhya Pradesh, India
d Kerala Technological University, Trivandrum, Kerala, India
e Sona College of Technology, Salem, Tamilnadu, India
f Sreenidhi Institute of Science and Technology, Hyderabad, Telangana, India

Abstract: This article critically reviews the materials, processing and reliability of InP high electron mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as drain current (ID) over 1200 mA/mm, transconductance (gm) over 3000 mS/mm, cut off frequency (fT) over 700 GHz and maximum oscillation frequency (fmax) over 1300 GHz makes InP HEMTs suitable for Terahertz wave applications. Furthermore, low DC power consumption and outstanding low noise performance makes InP HEMT most appropriate transistor technology for the development of space based receivers. This review article critically assesses the challenges in miniaturization of InP HEMTs, doping strategies in InP HEMTs, buried platinum technology, impact of annealing process and temperature, influence of electron and proton irradiation, thermal and bias stress on the reliability of InP HEMTs, cavity and gating effects and influence of trapping effects. InP HEMTs are very much preferable in applications like radio astronomy, terahertz optical and wireless communication systems, atmospheric imaging and sensing, automotive radar, ground based receivers in deep space networks, terahertz imaging and sensing, biomedical applications, security screening, video conferencing & real time multimedia file transfer, high speed and ultra low power digital integrated circuits.

Fig: 3D representation of InP high electron mobility transistor (InP HEMT)

[paper] Compact Analytical Modeling of FD Dual Material DG MOSFET

Shahana Akter1, Md. Mirazur Rahman1 and Md. Arif Abdulla Samy2

Compact Analytical Modeling of Surface Potential 

of a fully depleted Dual Material Double Gate MOSFET

Materials Mechatronics and Systems Engineering 2021, 1, 1. https://citescript.com/Journals/index.php/mmsj/

1 Department of EEE, Primeasia University
2 ATLAS Experiment, CERN

Abstract: Scaling transistors to gain speed while reducing capacitance and cost, is a key topic of today’s semiconductor industry, which is widely affected by Short-Channel Effects, the phenomenon that reduces efficiency. To dominate that unwanted effect, a 2-dimensional electrostatic potential modeling of the fully depleted channel, with high-k based dual material double gate (DMDG) MOSFET, has been developed in this paper. The expression for the electrostatic potential of DMDG has beendeveloped using 2-D Poisson’s equation with appropriate device boundary conditions. The device performance has been analyzed with the variation in device parameters, such as channel length, channel thickness, oxide thickness, and other key parameters. For authenticating, results have also been compared with state-of-the-art published results. This research was successful to exhibit that the proposed model could overcome Drain-induced Barrier Lowering, enhancing mobility carrier resulting to optimize short channel effect, which can bring a revolutionary change in transistor industry as well as in low power VLSI applications.

Fig: Device structure for the 2D double gate MOSFET

Acknowledgment: Authors would like to thank Professor Dr. Quazi Deen Mohd Khosru for his guidance in every step of this research. Without his valuable and persistent help, it would not be possible to conclude this project. The project has no external funding.