Scholten A.J., Smit G.D.J., Pijper R.M.T., Tiemeijer L.F.
Benchmark Tests for MOSFET Thermal Noise Models
In: Grasser T. (eds) Noise in Nanoscale Semiconductor Devices. Springer, Cham
Abstract - In today’s semiconductor industry, many traditional integrated device manufacturers (IDMs) are moving away from chip manufacturing, and transforming into fabless companies that use foundry services for manufacturing their ICs. This is especially true in the field of advanced CMOS technologies. In these companies-under-transformation, the work of the modeling engineer is changing: instead of building models from scratch themselves, most companies choose to use the modeling packages that are delivered by the foundries. There are two reasons to be skeptical about RF noise models. First, measurement of noise, and RF noise in particular, is a difficult and specialist topic. One should not take for granted that every company has the required expertise to carry out this task successfully. A second reason to check RF noise models is that the most popular compact MOSFET models are BSIM4 [1] and BSIMBULK [2], which are not particularly strong and certainly not predictive when it comes to RF noise. As a consequence, the work of the modeling engineer is changing from model creation to model verification.
Tab: Overview of benchmark tests for thermal noise
#No
|
Bias
|
Length
|
Quantity
|
Test
|
Remark
|
#1
|
VDS = 0V
|
All
|
SID
|
γ = 1
|
|
#2
|
VDS = 0 V
|
All
|
SIG
|
β = 5/12
|
|
#3
|
VDS = 0 V
|
All
|
c
|
c = 0
|
In the limit f ↓ 0 Hz
|
#4
|
Weak Inv
|
All
|
SID
|
F = 1
|
Disregard SIG contributions from gate to drain
|
#5
|
Saturation
|
Long
|
SID
|
γ = 2/3
|
|
#6
|
Saturation
|
Long
|
SIG
|
β = 4/3
|
|
#7
|
Saturation
|
Long
|
c
|
c = 0.4j
|
|
#8
|
Saturation
|
Short
|
SID
|
γ enhancement
|
Switch off gate resistance
|
#9
|
Saturation
|
All
|
SID
|
γ D,NMOS ≥ γ D,PMOS
|
Switch off gate resistance
|
#10
|
Saturation
|
All
|
SID
|
Different Vth flavors should nearly coincide
|
When plotted against ID
|
First Online: 27 April 2020
DOI: 10.1007/978-3-030-37500-3_20
Ref:
[1] N. Paydavosi, T.H. Morshed, D.D. Lu, W. Yang, M.V. Dunga, X. Xi, J. He, W. Liu, K.M. Cao, X. Jin, J.J. Ou, M. Chan, A.M. Niknejad, C. Hu, BSIM4v4.8.0 MOSFET Model - User’s Manual. [Online]. Available: http://bsim.berkeley.edu/models/bsim4/
[2] H. Agarwal, C. Gupta, H.-L. Chang, S. Khandelwal, J.P. Duarte, Y.S. Chauhan, S. Salahuddin, C. Hu, BSIM-BULK106.2.0 MOSFET Compact Model - Technical Manual. [Online]. Available: http://bsim.berkeley.edu/models/bsimbulk/
