2020 ICMTS, April 6-9, Edinburgh (UK)
Novel Statistical Modeling and Parameter Extraction Methodology
of Cutoff Frequency for RF-MOSFETs
Novel Statistical Modeling and Parameter Extraction Methodology
of Cutoff Frequency for RF-MOSFETs
Chika Tanaka, Yasuhiko Iguchi, Atsushi Sueoka, and Sadayuki Yoshitomi
Memory Division, Kioxia Corporation
2-5-1, Kasama, Sakae-ku, Yokohama, 247-8585, Japan
Abstract: The cutoff frequency fluctuation in RF-MOSFET has been investigated. Detailed analysis for capacitance fluctuation as well as the extraction of an intrinsic MOSFET parameter were performed. The extracted process parameters were verified by the framework of effective mobility. The global statistical model of cutoff frequency was successfully developed in terms of capacitance fluctuation, considering intrinsic (channel and bulk charge) and extrinsic (overlap and fringe) capacitance components separately and identifying the major variability sources for cutoff frequency by using extracted parameter.
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| Fig: Calculated σfT is plotted against σfT obtained from measured data. |
