[DAY 1] 1st Asia/South Pacific MOS-AK Workshop

Arbeitskreis Modellierung von Systemen und Parameterextraktion

Modeling of Systems and Parameter Extraction Working Group

1st Asia/South Pacific MOS-AK Workshop

(virtual/online) FEB. 25-26, 2021

DAY 1: FEB. 25, 2021
Session A Chair: Usha Gogineni, ams AG, Hyderabad (IN)

[1] New Insights in Low Frequency Noise Characteristics in PE-BJTs
Peijian Zhang and Ma Long
Science and Technology on Analog Integrated Circuit Laboratory; WHU (CN), Keysight Technologies (US)

[2] Direct white noise characterization of short-channel MOSFETs
K. Ohmori and S. Amakawa
DeviceLab, Tsukuba (J)

[3] SPICE Modeling of 2D-material based FETs with Schottky-barrier contacts
Sheikh Aamir Ahsan
Nanoelectronics Research and Development Group, NIT Srinagar, Jammu and Kashmir (IN)


[4] Physics-based model of SiC MOSFETs including high voltage and current regions
Sourabh Khandelwal, Cristino Salcines, and Ingmar Kallfass
Macquarie University Sydney (AU), University of Stuttgart (D)

Session B Chair: Daniel Tomaszewski, IMiF, Warszaw (PL)
[5] Compact Modeling for Gate-All-Around FET Technology
Avirup Dasgupta
IIT Roorkee (IN)


[6] BSIM-HV: Advanced High Voltage MOSFET Compact Model
Harshit Agarwal
IIT Jodhpur (IN)

[7] ASCENT+ Transnational Access for the nanoelectronics
Georgios Fagas
Tyndall (IE)

[Pic] Group photo of selected MOS-AK participants attending 1st Day of the workshop

[https://t.co/42ahdl8o1h] Study Captures #India's Rise in #Nanoelectronics Research https://t.co/xGqsmBiKKa #semi https://t.co/XNnB7RP3Fn

[https://t.co/42ahdl8o1h] Study Captures #India's Rise in #Nanoelectronics Research https://t.co/xGqsmBiKKa #semi pic.twitter.com/XNnB7RP3Fn

— Wladek Grabinski (@wladek60) February 26, 2021

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from Twitter https://twitter.com/wladek60

February 26, 2021 at 02:32PM
via IFTTT

President Biden signed an executive order Wednesday addressing growing concern over a global semiconductor shortage hampering the production of goods like automobiles and smartphones. https://t.co/JGZVSGVeSF #semi https://t.co/vWAg7EaYW8

President Biden signed an executive order Wednesday addressing growing concern over a global semiconductor shortage hampering the production of goods like automobiles and smartphones. https://t.co/JGZVSGVeSF#semi pic.twitter.com/vWAg7EaYW8

— Wladek Grabinski (@wladek60) February 26, 2021

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from Twitter https://twitter.com/wladek60

February 26, 2021 at 02:16PM
via IFTTT

[Infineon Technologies] #quantum #computing development

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— Wladek Grabinski (@wladek60) February 24, 2021

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from Twitter https://twitter.com/wladek60

February 24, 2021 at 11:46PM
via IFTTT

[papers] Compact/SPICE Modeling

[1] Wang, Jie; Chen, Zhanfei; You, Shuzhen; Bakeroot, Benoit; Liu, Jun; Decoutere, Stefaan; "Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs" Micromachines (2021) 12, no. 2: 199; https://doi.org/10.3390/mi12020199

Abstract: We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion. The SP equation and its analytical approximate solution provide a high degree of accuracy for the SP calculation, from which the closed-form I–V equations are derived. The proposed model uses physical parameters only and is implemented in Verilog-A code.

Fig: The equivalent circuit of the capacitance of field plates (FPs) of a p-GaN gate HEMT.

[2] Chen, H. and He, L.,  The spatial and energy distribution of oxide trap responsible for 1/f noise in 4H-SiC MOSFETs. Journal of Physics Communications, JPCO-101816.R1 (2021)

Abstract: Low-frequency noise is one of the important characteristics of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) that is susceptible to oxide traps. Drain-source voltage noise models of 4H-SiC MOSFETs under low–drain-voltage and inverse condition were proposed by considering the spatial and energy non-uniform distribution of the oxide trap, based on the McWhoter model for uniform trap distribution. This study performed noise experiments on commercial 4H-SiC MOSFETs, and revealed that the non-uniform spatial and non-uniform energy distribution caused new 1/f noise phenomenon, different from that under uniform spatial and energy distribution. By combining experimental data and theoretical models, the spatial and energy distribution of oxide traps of these samples were determined.

Fig: Adaptive circuit for 4H-SiC MOSFET noise measurement

in the frequency 1 Hz-10kHz ranged