Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
1st Asia/South Pacific MOS-AK Workshop
(virtual/online) FEB. 25-26, 2021
DAY 1: FEB. 25, 2021
Session A Chair: Usha Gogineni, ams AG, Hyderabad (IN)
[1] New Insights in Low Frequency Noise Characteristics in PE-BJTs
Peijian Zhang and Ma Long
Science and Technology on Analog Integrated Circuit Laboratory; WHU (CN), Keysight Technologies (US)
[2] Direct white noise characterization of short-channel MOSFETs
K. Ohmori and S. Amakawa
DeviceLab, Tsukuba (J)
[3] SPICE Modeling of 2D-material based FETs with Schottky-barrier contacts
Sheikh Aamir Ahsan
Nanoelectronics Research and Development Group, NIT Srinagar, Jammu and Kashmir (IN)
[4] Physics-based model of SiC MOSFETs including high voltage and current regions
Sourabh Khandelwal, Cristino Salcines, and Ingmar Kallfass
Macquarie University Sydney (AU), University of Stuttgart (D)
Session B Chair: Daniel Tomaszewski, IMiF, Warszaw (PL)
[5] Compact Modeling for Gate-All-Around FET Technology
Avirup Dasgupta
IIT Roorkee (IN)
[6] BSIM-HV: Advanced High Voltage MOSFET Compact Model
Harshit Agarwal
IIT Jodhpur (IN)
[7] ASCENT+ Transnational Access for the nanoelectronics
Georgios Fagas
Tyndall (IE)
No comments:
Post a Comment