Generalized EKV Compact MOSFET Model

On the Explicit Saturation Drain Current in the Generalized EKV Compact MOSFET Model

Francisco J. García-Sánchez, Life Senior Member, IEEE,

and Adelmo Ortiz-Conde, Senior Member, IEEE

IEEE TED Aug 9. 2021

DOI: 10.1109/TED.2021.3101186

*Solid State Electronics Laboratory, Universidad Simón Bolívar, Caracas 1080, Venezuela

Abstract: We present and discuss explicit closed-form expressions for the saturation drain current of short channel metal-oxide-semiconductorfield-effect transistors (MOSFETs) with gate oxide and interface-trapped charges, and including carrier velocity saturation, according to the generalized Enz-Krummenacher-Vittoz (EKV) MOSFET compact model. The normalized saturation drain current is derived as an explicit function of the normalized terminal voltages by solving the transcendental voltage versus charge equation using the Lambert W function. Because this special function is analytically differentiable, other important quantities, such as the transconductance and the transconductance-to-currentratio, can be readily expressed as explicit functions of the terminal voltages.

Fig: Comparison of simulated transfer characteristics with (red lines and symbols) and another without (black lines and symbols) radiation-induced oxide and interface-trapped charges. Calculation of V_GB versus ID_sat (lines) comes from denormalization and the explicit ID_sat versus V_GB (symbols) comes from denormalization of the proposed explicit expressions

IFS2021-MT Registration Now Open

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[mos-ak] [open registration] 18th MOS-AK ESSDERC/ESSCIRC Workshop Grenoble; Sept. 6, 2021

The MOS-AK/Grenoble Workshop Program is available online:
https://www.mos-ak.org/grenoble_2021/

Venue: Online MOS-AK Webinar; use the online form/link below to register:

https://forms.gle/neAwxTczP9PVE7uU6

Registered MOS-AK/Grenoble participants will receive an online access link on SEPT.3 before the main event;

any related enquiries can be sent to register@mos-ak.org

-- W.Grabinski; MOS-AK (EU)

WG240821

[book] Fully Depleted SOI

Sorin Cristoloveanu; Fully Depleted Silicon-On-Insulator:

Nanodevices, Mechanisms and Characterization
2021 Elsevier B.V. 

ISBN: 978-0-12-819643-4

Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology.

There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IoT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. 

Key Features:

• Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient
• Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices
• Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

Table of Contents:

Front Matter

Preface

Part I: Technology

Chapter 1 - FD-SOI technology pp. 3-37

Part II: Mechanisms in FD-SOI MOSFET

Chapter 2 - Coupling effects pp. 41-70

Chapter 3 - Scaling effects pp. 71-114

Chapter 4 - Floating-body effects pp. 115-138

Part III: Electrical characterization techniques for FD-SOI structures

Chapter 5 - The pseudo-MOSFET pp. 141-177

Chapter 6 - Diode-based characterization methods pp. 179-200

Chapter 7 - Characterization methods for FD-SOI MOSFET pp. 201-238

Part IV: Innovative FD-SOI devices

Chapter 8 - Electrostatic doping and related devices pp. 241-265

Chapter 9 - Band-modulation devices pp. 267-298

Chapter 10 - Emerging devices pp. 299-348

FD-SOI teasers pp. 349-352

Index

[mos-ak] Re: [Final Program] 18th MOS-AK ESSDERC/ESSCIRC Workshop Grenoble; Sept. 6, 2021

Arbeitskreis Modellierung von Systemen und Parameterextraktion
Modeling of Systems and Parameter Extraction Working Group
18th MOS-AK ESSDERC/ESSCIRC Workshop
Grenoble (online), Sept. 6, 2021

Together with local Host and MOS-AK Organizers as well as all the Extended MOS-AK TPC Committee, we invite you to the consecutive 18th MOS-AK ESSDERC/ESSCIRC Workshop. Scheduled Virtual/Online MOS-AK event aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and TCAD/EDA tool developers and vendors.

The MOS-AK Workshop Program is available online:
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Venue: Online MOS-AK Webinar; use the online form/link below to register:
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Registered MOS-AK/Grenoble participants will receive an online access link on SEPT.3 before the main event;
any related enquiries can be sent to register@mos-ak.org

-- W.Grabinski; MOS-AK (EU)

WG180821

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