[paper] Charge-based Modeling of FETs

Jean-Michel Sallese 

Charge-based modeling of field effect transistors, Make it easy

Joint International EUROSOI and EuroSOI-ULIS Workshop (Sept.2020)

DOI: 10.1109/EuroSOI-ULIS53016.2021.956068

 
EDLab, EPFL,  Lausanne  (CH)
 

Abstract: In this presentation, we revisit some charge voltage dependencies for different architectures of field effect transistor, emphasizing on compactness and simplicity while maintaining a close link with physics, which makes these models predictive and accurate for general purposes of compact modeling.

Fig: The gm/I invariant versus the inversion coefficient IC. 

The operation modes of the MOSFET are clearly defined. 

Acknowledgements: I (JMS) would like to thank F. Jazaeri, C. Lallement, W. Grabinski, B. Iniguez and M. Bucher for their constructive interactions.