[paper] Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Jonghwan Lee

Unified Model of Shot Noise in the Tunneling Current in Sub-10 nm MOSFETs

Nanomaterials 2021, 11, 2759

DOI: 10.3390/nano11102759

  

Department of System Semiconductor Engineering, Sangmyung University, Cheonan 31066, Korea,
  

Abstract: A single unified analytical model is presented to predict the shot noise for both the source to drain (SD) and the gate tunneling current in sub-10 nm MOSFETs with ultrathin oxide. Based on the Landauer formula, the model is constructed from the sequential tunneling flows associated with number fluctuations. This approach provides the analytical formulation of the shot noise as a function of the applied voltages. The model performs well in predicting the Fano factor for shot noise in the SD and gate tunneling currents.

Fig: Comparison between ST model and CT model of Fano factor as a function of Vgs

for (a) SD current noise and (b) gate tunneling current noise.

Funding: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (No. 2019R1F1A1050640).