[IEEE EDS DL] Multifunctional materials for emerging optoelectronic technologies

IEEE EDS Distinguished Lecture

Hawaii Section Jt. Chapter, ED15/SSC37

December 19 @ 6:30 pm - 8:00 pm

Room: 244, Bldg: Holmes Hall, 2540 Dole St, Honolulu

Hawaii, United States, 96822

Dr. Federico Rosei from the University of Trieste will be presenting a Distinguished Lecturer Seminar titled "Multifunctional materials for emerging optoelectronic technologies" on Friday December 19th at 6:30PM. RSVP one week in advance for a headcount on food [register]

Abstract: functionalities. Such systems are then used as building blocks for the fabrication of various emerging technologies. In particular, nanostructured materials synthesized via the bottom–up approach present an opportunity for future generation low cost manufacturing of devices. We focus in particular on recent developments in solar technologies that aim to address the energy challenge, including third generation photovoltaics, solar hydrogen production, luminescent solar concentrators and other optoelectronic devices. 

Bio: Federico Rosei (MSc (1996) and PhD (2001) from the University of Rome “La Sapienza”) holds the Chair of Industrial Chemistry at the Department of Chemical and Pharmaceutical Sciences, University of Trieste since March 2023. Previously he was Full Professor at the Centre Énergie, Matériaux et Télécommunications, Institut National de la Recherche Scientifique, Varennes (QC) Canada, where he served as Director (07/2011–03/2019). He held the Canada Research Chair (Junior) in Nanostructured Organic and Inorganic Materials (2003–2013) and the Canada Research Chair (Senior) in Nanostructured Materials (2016–2023) and the UNESCO Chair in Materials and Technologies for Energy Conversion, Saving and Storage (2013–2023).

[paper] Compact Wide-Band Antenna

A. Anand Babu, K. Thenmalar

Design and Evaluation of a Compact Wide-Band Antenna for Wearable Wireless Applications

Tehnički vjesnik 32, 6(2025), 2437-2442

Original scientific paper DOI: 10.17559/TV-20241128002156

ECE, Vivekanandha College of Technology, Tiruchengode, Tamil Nadu, India
EEE, Vivekanandha College of Engineering for Women, Tiruchengode, Tamil Nadu, India

Abstract: This article presents a compact wide-band antenna designed for emerging wireless applications. The antenna utilizes a fiberglass-reinforced (FR4) substrate material with a thickness of 1.6 mm as its base. By varying the length and side edge dimensions of the antenna element, the design achieves a wide operational bandwidth ranging from 3.2 to 3.8 GHz, covering all new radio bands. Experimental optimization of various parameters has been conducted to ensure precise tuning within the desired frequency range. The antenna exhibits a uniform radiation pattern across its operating band, ensuring stable performance. Specific Absorption Rate (SAR) evaluations, conducted as per the Federal Communications Commission (FCC) guidelines, confirm the SAR values remain within the prescribed safety limit of 1.6 W/kg when the antenna is positioned on a human phantom model. The proposed antenna also demonstrates high radiation efficiency and peak gain, making it suitable for wearable applications where compact size and reliable performance are critical. This innovative design addresses the growing demand for wide-band antennas in wireless communication systems, emphasizing safety, efficiency, and adaptability for wearable technologies.

Fig: Electric field distribution over the radiating circle at (a) 3.45 GHz; (b) 3.7 GHz

(c) - (d) fabricated antenna images

[Free Session] Tokai Rika OpenPDK

Tokai Rika Shuttle Open PDK Commentary Free Session

Saturday, December 13, 2025 13:00~17:00 [and online]

WeWork Hibiya FORT TOWER 9th Floor, Conference Room 9R

1-1 Nishi-Shimbashi, Minato-ku, Tokyo

Time	Speaker	Topic
12:50	ISHI Club	1F Gathering
13:00	ISHI Club	Opening
13:00-13:30	OpenSUSI	Overview of Tokai Rika Shuttle PDK and future plans
13:30-14:30	jun1okamura	Outline of the production of DRC and LVS of Tokai Rika Shuttle PDK and explanation of contents
14:30-15:00	OpenSUSI	Break & Information Exchange
15:00-15:30	Mitch Bailey	Detailed explanation of LVS (Japanese lecture)
15:30-16:00	Hota (SIG's Playground)	How to 🚶 walk through open source PDK: "What is PDK in the first place?" "Where do you want to "read" PDK? "If you want to make your own PDK, where do you start?" and "Examples of what you have done so far".
16:00-16:30	OpenSUSI	PDK Conversation: jun1okamura x Hota x Mitch Bailey: Mr. Hota, an expert in commercial PDK development at a major domestic company, and Mitch Bailey, an expert in open PDK who has been performing structural checks and PDK maintenance of GDS submitted by eFabless, etc.
16:30-17:00	OpenSUSI	PDK Conversation / Honest Edition (No more online streaming will be done from now on): Continuing from the above, we plan to talk about things that cannot be said publicly. In a sense, this may be the real thing.
17:00	ISHI Club	Closing

Discord invitation link 

https://discord.gg/Sj47dJk8x7 

https://discord.gg/RwAWF5mZSR

[Book] Essential Semiconductor Physics

Essential Semiconductor Physics

Mark Lundstrom (Purdue University, USA)

New Era Electronics: A Lecture Notes Series

Pages: 424; October 2025

https://doi.org/10.1142/14454

This book is the fourth volume in the New Era Electronics lecture notes series, a compilation of volumes defining the important concepts tied to the electronics transition happening in the 21st century.

The lectures in this volume are about the underlying physics that makes semiconductor devices possible. The treatment is physical and intuitive; the text is descriptive, not heavily mathematical. The lectures are designed to be broadly accessible to students in science or engineering and to working engineers. They present an electrical engineering perspective, but those in other fields may find them a useful introduction to the approach that has guided the development of semiconductor technology for more than 75 years.

For those who use semiconductor devices, these lectures provide an understanding of the physics that underlies their operation. For those developing semiconductor technologies, these lectures provide a starting point for diving deeper into the physics, chemistry, and materials science relevant to semiconductors. Those who have taken advanced courses will see how specific topics fit into a broader framework. 

Book Sections

Front Matter; pp. i–xvi

Part 1: Materials Properties and Doping

• Lecture 1: Energy Levels to Energy Bands; pp. 3–16
• Lecture 2: Crystalline, Polycrystalline, and Amorphous Semiconductors; pp. 17–27
• Lecture 3: Miller Indices; pp. 29–39
• Lecture 4: Properties of Common Semiconductors; pp. 41–46
• Lecture 5: Free Carriers in Semiconductors; pp. 47–56
• Lecture 6: Doping; pp. 57–75

Part 2: Rudiments of Quantum Mechanics

• Lecture 7: The Wave Equation; pp. 79–99
• Lecture 8: Quantum Confinement; pp. 101–116
• Lecture 9: Quantum Tunneling and Reflection; pp. 117–129
• Lecture 10: Electron Waves in Crystals; pp. 131–145
• Lecture 11: Density of States; pp. 147–164

Part 3: Equilibrium Carrier Concentrations

• Lecture 12: The Fermi Function; pp. 167–177
• Lecture 13: Fermi-Dirac Integrals; pp. 179–190
• Lecture 14: Carrier Concentration vs. Fermi Level; pp. 191–203
• Lecture 15: Carrier Concentration vs. Doping Density; pp. 205–213
• Lecture 16: Carrier Concentration vs. Temperature; pp. 215–228

Part 4: Carrier Transport, Recombination, and Generation

• Lecture 17: Current Equation; pp. 231–250
• Lecture 18: Drift Current; pp. 251–270
• Lecture 19: Diffusion Current; pp. 271–280
• Lecture 20: Drift-Diffusion Equation; pp. 281–288
• Lecture 21: Carrier Recombination; pp. 289–308
• Lecture 22: Carrier Generation; pp. 309–323

Part 5: The Semiconductor Equations

• Lecture 23: The Semiconductor Equations; pp. 327–342
• Lecture 24: Energy Band Diagrams; pp. 343–361
• Lecture 25: Quasi-Fermi Levels; pp. 363–374
• Lecture 26: Minority Carrier Diffusion Equation; pp. 375–396

Back Matter; pp. 397–406

[paper] 28 GHz Wireless Channel for a Quantum Computer at 4K

Ama Bandara∗, Viviana Centritto Arrojo∗, Heqi Deng†, Masoud Babaie†, Fabio Sebastiano†, Edoardo Charbon‡, Evgenii Vinogradov∗, Eduard Alarcon∗, Sergi Abadal∗

28 GHz Wireless Channel Characterization for a Quantum Computer Cryostat at 4 Kelvin

arXiv:2510.16962v1 [quant-ph] 19 Oct 2025

∗Nanonetworking Center in Catalunya, Universitat Politecnica de Catalunya, Barcelona (SP)
† Delft University of Technology (NL)
‡ Ecole Polytechnique F ́ed ́erale de Lausanne (EPFL, CH) 

Abstract: The scalability of quantum computing systems is constrained by the wiring complexity and thermal load introduced by dense wiring for control, readout and synchronization at cryogenic temperatures. To address this challenge, we explore the feasibility of wireless communication within a cryostat for a multi-core quantum computer, focusing on wireless channel characterization at cryogenic temperatures. We propose to place on-chip differential dipole antennas within the cryostat, designed to operate at 28 GHz in temperatures as low as 4 K. We model the antennas inside a realistic cryostat and, using full-wave electromagnetic simulations, we analyze impedance matching, spatial field distribution, and energy reverberation due to metallic structures. The wireless channel is characterized through measured channel impulse response (CIR) across multiple receiver antenna positions. The results demonstrate potential for reliable shortrange communication with high Signal-to-Noise Ratio (SNR) and limited sensitivity to positional variation, at the cost of nonnegligible delay spread, due to significant multipath effects.

Fig: Spatial distribution of the electrical field across the cryostat as observed in the cross-section, 
general top view, and top view at the plane of the antennas.

Acknowledgements: Authors gratefully acknowledge funding from the European Commission via projects with GA 101042080 (WINC) and 101099697 (QUADRATURE).