Zhidong Tang, Zewei Wang, Yumeng Yuan, Chang He, Xin Luo, Ao Guo, Renhe Chen, Yongqi Hu, Longfei Yang, Chengwei Cao, Linlin Liu, Liujiang Yu, Ganbing Shang, Yongfeng Cao, Shoumian Chen, Yuhang Zhao, Shaojian Hu, and Xufeng Kou
Generic Cryogenic CMOS Device Modeling and EDA-Compatible Platform
for Reliable Cryogenic IC Design
IEEE JEDS, vol. 13, pp. 117-127 (2025)
DOI: 10.1109/JEDS.2025.3542589
1. ShanghaiTech University, Shanghai (CN)
2. University of Chinese Academy of Sciences, Beijing (CN)
3. Shanghai IC Research and Development Center, Shanghai (CN)
4. Huali Microelectronics Corporation (HLMC), Shanghai (CN)
5. School of Integrated Circuits, Tsinghua University, Beijing (CN)
Abstract: This paper outlines the establishment of a generic cryogenic CMOS database in which key electrical parameters and transfer characteristics of the MOSFETs are quantified as functions of device size, temperature, and frequency responses. Meanwhile, a comprehensive device statistical study is conducted to evaluate the influence of variation and mismatch effects at low temperatures. Furthermore, by incorporating the Cryo-CMOS compact model into the HLMC process design kit (PDK), the cryogenic 4Kb SRAM, 5-bit flash ADC and 8-bit current steering DAC are designed, and their performance is readily investigated and optimized on the EDA-compatible platform, hence laying a solid foundation for large-scale cryogenic IC design.
FIG: Schematic of the solid-state based quantum computer architecture
with integrated quantum control system in a cryogenic environment.
Acknowledgments: This work was supported by the National Key R&D Program of China (2021YFA0715503, 2023YFB4404000), National Natural Science Foundation of China (92164104), the Strategic Priority Research Program of CAS (XDA18010000), Shanghai Rising-Star Program (21QA1406000) and the Open Fund of State Key Laboratory of Infrared Physics.
