Writing a science/tech book, is it that hard?

Writing a science/tech book, is it that hard?

As a microwave engineer Errikos Lourandakis, PhD, a senior R&D engineer at Helic Inc., started with RF device characterization while working on his PhD. He got fascinated about it and gradually devoted much of his time in the lab (see his lab pic below), though RF and Microwave Measurements were just a vehicle for microwave circuit design that was his actual PhD topic. After 10+ years in academia and industry, recently he has also published his new book "On-Wafer Microwave Measurements and De-embedding"

Errikos' RF and mm-Wave Measurement Lab

Is it worth it? [read more...]

[Fellowship] Physics Based Modeling Simulation and Electrical Characterization

Physics Based Modeling Simulation and Electrical Characterization 

of Quantum Effects in Multigate MOSFETs

[DRDO Fellowship]

Dr. Vimala Palanichamy is looking for Junior Research Fellowship (INR 25000 Stipend per Month) for this project funded by Defense Research and Development Organization (DRDO), Government of India. Please refer below advertisement for applying for Junior Research Fellowship for working on the project: 

http://dayanandasagar.edu/dsce/images/pdf/Advertisement_for_JRF.pdf

The #efabless $15,000 #Design #Challenge https://t.co/OV5sjnfSxm #papers

The #efabless $15,000 #Design #Challenge https://t.co/OV5sjnfSxm #papers

— Wladek Grabinski (@wladek60) November 30, 2016

from Twitter https://twitter.com/wladek60

November 30, 2016 at 01:17PM
via IFTTT

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors #papers https://t.co/IS3MAiWqZY

Investigation of Gate Direct-Current and Fluctuations in Organic p-Type Thin-Film Transistors #papers https://t.co/IS3MAiWqZY

— Wladek Grabinski (@wladek60) November 29, 2016

from Twitter https://twitter.com/wladek60

November 29, 2016 at 02:51PM
via IFTTT

#Opensource #lab-on-a-board costs $29 https://t.co/cJIQPpDgvG #software #feedly #papers

#Opensource #lab-on-a-board costs $29 https://t.co/cJIQPpDgvG #software #feedly #papers

— Wladek Grabinski (@wladek60) November 26, 2016

from Twitter https://twitter.com/wladek60

November 26, 2016 at 08:25PM
via IFTTT

[paper] RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors

RESURF Model and Electrical Characteristics of Finger-Type STI Drain Extended MOS Transistors
H. C. Tsai, R. H. Liou and C. Lien
IEEE Transactions on Electron Devices
vol. 63, no. 12, pp. 4603-4609, Dec. 2016

Abstract: Finger-type shallow trench isolation (finger STI) drain extended MOS transistors are fabricated and its electrical characteristics is studied. Polyplate on a finger STI served as a reduced surface field is adopted to enhance breakdown voltage (BV) by reducing the effective doping concentration of the drain extension (DE) finger. The conformal mapping method, which relates the reduction of the doping concentration to the width (z_o) of the DE finger, the gap (z_d) between the polyplate and the DE finger, and the STI depth (y_s), is used to estimate the reduction of the doping concentration theoretically. Based on this reduced doping concentration, a BV model is derived. The predictions of this model agree very well with the experimental data.

Keywords: Conformal mapping, Doping, Electric breakdown, MOS devices, Semiconductor process modeling, Silicon, Transistors, Drain extended MOS (DEMOS), Lateral double Diffused MOS (LDMOS), poly field plate, reduced surface field (RESURF)

doi: 10.1109/TED.2016.2605504
[read more...]

[paper] Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325 GHz

Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325GHz

Marina Deng^a, Thomas Quémerais^b, Simon Bouvot^a, ^b, Daniel Gloria^b, Pascal Chevalier^b

Sylvie Lépilliet^a, François Danneville^a, Gilles Dambrine^a

^aIEMN UMR CNRS 8520, University of Lille, Avenue Poincaré, CS60069, 

59652 Villeneuve-d’Ascq Cedex, France

^bSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

Highlights

• The SiGe HBT full S-parameters from 250MHz to 325GHz under multiple bias conditions are presented for the first time.
• Standard calibration and de-embedding techniques are used and remained valid up to 325GHz thanks to a reduction of the test structures dimensions.
• A simple and accurate small-signal electrical model was extracted and compared with measurements up to 325GHz.

Received 19 September 2016, Revised 18 November 2016, Accepted 21 November 2016, Available online 22 November 2016 [read more...]

http://dx.doi.org/10.1016/j.sse.2016.11.012