Thursday, 24 November 2016

[paper] Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325 GHz

Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325GHz
Marina Denga, Thomas Quémeraisb, Simon Bouvota, b, Daniel Gloriab, Pascal Chevalierb
Sylvie Lépillieta, François Dannevillea, Gilles Dambrinea
aIEMN UMR CNRS 8520, University of Lille, Avenue Poincaré, CS60069, 
59652 Villeneuve-d’Ascq Cedex, France
bSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

Highlights
  • The SiGe HBT full S-parameters from 250MHz to 325GHz under multiple bias conditions are presented for the first time.
  • Standard calibration and de-embedding techniques are used and remained valid up to 325GHz thanks to a reduction of the test structures dimensions.
  • A simple and accurate small-signal electrical model was extracted and compared with measurements up to 325GHz.

Received 19 September 2016, Revised 18 November 2016, Accepted 21 November 2016, Available online 22 November 2016 [read more...]

http://dx.doi.org/10.1016/j.sse.2016.11.012

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