[paper] Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325 GHz

Small-Signal Characterization and Modeling of 55 nm SiGe BiCMOS HBT up to 325GHz

Marina Deng^a, Thomas Quémerais^b, Simon Bouvot^a, ^b, Daniel Gloria^b, Pascal Chevalier^b

Sylvie Lépilliet^a, François Danneville^a, Gilles Dambrine^a

^aIEMN UMR CNRS 8520, University of Lille, Avenue Poincaré, CS60069, 

59652 Villeneuve-d’Ascq Cedex, France

^bSTMicroelectronics, 850 rue Jean Monnet, 38926 Crolles, France

Highlights

• The SiGe HBT full S-parameters from 250MHz to 325GHz under multiple bias conditions are presented for the first time.
• Standard calibration and de-embedding techniques are used and remained valid up to 325GHz thanks to a reduction of the test structures dimensions.
• A simple and accurate small-signal electrical model was extracted and compared with measurements up to 325GHz.

Received 19 September 2016, Revised 18 November 2016, Accepted 21 November 2016, Available online 22 November 2016 [read more...]

http://dx.doi.org/10.1016/j.sse.2016.11.012