OpenPDK Networking Workshop

OpenPDK, OpenTooling and Open Source Design

An Initiative to Push Development

Date:
Networking Workshop FMD-QNC on 27-28 June 2023
Location:
IHP; Im Technologiepark 25; 15236 Frankfurt (Oder)
Contact:
Sergei Andreev; Phone: +49 335 5625 523

Free Registration: 

OnLine

The workshop is organised by IHP and FMD (Research Fab Microelectronics Germany) within the framework of the FMD-QNC Project.

Within the project FMD-QNC analog circuit design with open source software shall be enabled. For this purpose, both the open source design tools and a process design kit of the semiconductor technology used must support the entire design flow with sufficient quality. IHP provides its 130 nm BiCMOS technology SG13G2 for open source design. This technology is particularly suited for high frequency and mixed signal design applications. While basic tool support already exists for digital circuit design, it is still very rudimentary for analog designs and especially for high frequency designs. A considerable effort has to be put into the development of the design tools as well as into the creation of the technology specific Process Design Kit (PDK).

The 2-day workshop is intended to promote exchange and networking between tool developers, the PDK developers at IHP and designers. Tool developers are to present the capabilities of the tools as well as planned enhancements. Designers are to present ideas that can be used for training chip designers. Requirements for open source design tools for digital design, mixed signal design, and high frequency design are to be highlighted.

Discussions will identify and prioritize gaps for a complete design flow in the open source tools and PDK. The workshop will thus help to concrete the planning for the Open Design Platform and to create a roadmap for future work.

Presentation	Presenter/Institution	Timeline
Day 1
Welcome by coordinator FMD-QNC	Dr. Andreas Bruning Research Fab Microelectronics Germany	9:00-9:10
Introduction FMD-QNC project status and IHP OpenPDK Roadmap	Dr. Rene Scholz IHP	9:10-9:30
Status OpenPDK and OpenTooling for SG13G2 BiCMOS technology	Sergei Andreev IHP	9:30-10:00
An Ultra-Low-Power High-Density Wireless Biomedical Sensing System	Prof. Harald Pretl Johannes Kepler University Linz	10:00-10:30
Teaching digital design by using open-source EDA tools	Prof. Steffen Reith Rhein Main University of Applied Sciences	10:30-11:00
Coffee break		11:00-11:40
CMOS Rail-to-Rail Operational Amplifier for HPGe Radiation Detector	Prof. Herman Jalli Ng Karlsruhe University of Applied Sciences	11:40-12:10
Design-flow approaches for mmWave and sub-THz integrated transceiver circuits for radar and communication	Sasha Breun FAU Erlangen	12:10-12:40
Lunch break		12:40-13:40
TBD	Dr. Frank K. Gurkaynak ETH Zurich	13:40-14:10
TBD	Joachim Hebeler Karlsruhe Institute of Technology	14:10-14:40
Coffee break		14:40-15:10
TBD	Prof.  Dietmar Kissinger Ulm University	15:10-15:40
LibMan - an easy way to manage your open source design flow	Dr. Anton Datsuk IHP	15:40-16:10
Get together (Barbecue)		17:00-…
Day 2
ngspice - status and future developments	Prof. Holger Vogt	9:00-9:20
DMT - Python Toolkit for Device Modeling	Mario Krattenmacher SemiMod	9:20-9:40
OpenVAF - Next Generation Verilog-A Compiler with ngspice integration	Mario Krattenmacher SemiMod	9:40-10:00
Coffee break		10:00-10:40
Best practices for implementing and optimizing KLayout DRC and LVS decks	Matthias Köfferlein	10:40-11:00
Generating DRC and LVS Runsets for KLayout	Dr. Andreas Krinke TU Dresden	11:00-11:20
OpenEMS in open source EDA	Jan Taro Svejda University of Duisburg-Essen	11:20-11:40
Lunch break		11:40-12:40
Panel discussion on the roadmap – open source tools for IC design Topics: Digital design flow Analog design flow Challenges in RF design	Dr. Norbert Herfurth IHP Panelists: TBD	12:40-14:10

ECME 2023: deadline for abstract submission

 

Dear Colleague, 

as you may know, the 16^th European Conference of Molecular Electronics (ECME) will be held in Bari (Italy) on 2-6 October 2023 in the beautiful venue of the Municipal Theatre Niccolò Piccinni (https://www.ecme2023.eu/). 

This mail is to kindly invite you to submit your contribution to ECME-2023 by May 24, 2023.

Over the years, ECME has become the premier European Conference in the field of Molecular Electronics, and ECME 2023 will continue the prestigious series of biannual conferences previously organized in Italy (Padua, 1992), Germany (Kloster Banz, 1994), Belgium (Leuven, 1996), UK (Cambridge, 1997), Sweden (Linköping, 1999), The Netherlands (Rolduc, 2001), France (Avignon, 2003), Italy (Bologna, 2005), France (Metz, 2007), Denmark (Copenhagen, 2009), UK (London, 2013), France (Strasburg, 2015), Germany (Dresden, 2017), Sweden (Linköping, 2019).

 
The conference will cover all areas related to molecular-organic and plastic electronics including chemistry, physics, biology, materials science, nanoscience, engineering, device fabrication, and commercialization. 

You will also have the chance to enjoy your stay in the beautiful city of Bari, the capital of the Apulia region (https://www.italia.it/en/puglia/bari). The conference venue is right in the city center directly connected to the international airport and very close to the medieval quarter called "Bari vecchia". Bari is not only rich in monuments, medieval churches, and cultural sites, but holds one of the most beautiful and long promenades in Italy overlooking a wonderful clear sea, all at walking distance from the conference venue. Walking through the streets of Bari means appreciating not only the local culture, history, art, and architecture but also the local cuisine served in any restaurants, trattoria, osteria, or else enjoying the typical humble street food, such as focaccia and panzerotti. 

We are looking forward to welcoming you to Bari,

Luisa Torsi and Gianluca Farinola

(ECME 2023 Chairpersons) 

[EDS MQ/DL] The Transistor Turns 75

The Transistor Turns 75

A Forward Look to Challenges and Opportunities

A series of IEEE EDS Distinguished Lecturer talks on topics in current transistor and electron device research, reflecting on the challenges ahead and the rewards inherrent in overcomming them.

DATE AND TIME	LOCATION	HOSTS	REGISTRATION
Date: 02 Jun 2023 Time: 08:30 AM to 05:30 PM All times are (UTC+00:00) Edinburgh	Moller Institute Cambridge, England UK CB3 ODE Click here for Map	UK and Ireland Section Chapter, ED15 Contact Host	Starts 19 April 2023 06:00 AM Ends 30 May 2023 06:30 PM All times are (UTC+00:00) Edinburgh No Admission Charge Register Now

EDS DL SPEAKERS

• Benjamin Iniguez: Modeling 2D Semiconductor Devices
• Lluis Marsal: Organic Photovoltaics: Opportunities and Challenges
• Arokia Nathan: 
• Fernando Guarin: 75th Anniversary of the Transistor Semiconductor Industry Perspective
• Edmundo A. Gutierrez-D.: DC and RF reliability of advanced bulk and SOI CMOS technologies
• Merlyne De Souza: Challenges to Edge computing: an era beyond silicon CMOS
• Samar Saha: 
• MK Radhakrishnan: Birth and Evolution of Transistor and Its Impact on Humanity
• Xiaojun Guo: Transistor Technologies for Hybrid Integration at Micro- and Macro-scales
• Hiroshi Iwai: Present status and future of the nanoelectronics technology

TataCompanies has employed former Intel executive Randhir Thakur

The Indian conglomerate @TataCompanies has employed former Intel executive Randhir Thakur to be CEO of its subsidiary set up to the enter #semi manufacturing https://t.co/kIFR5Bci3s https://t.co/LcvOTG25aw

— Wladek Grabinski (@wladek60) Apr 19, 2023

---

from Twitter https://twitter.com/wladek60

April 19, 2023 at 01:38PM
via IFTTT

Compact Modeling of 2D Field-Effect Biosensors

Francisco Pasadas¹, Tarek El Grour², Enrique G. Marin¹, Alberto Medina-Rull¹, Alejandro Toral-Lopez¹, Juan Cuesta-Lopez¹, Francisco G. Ruiz¹, Lassaad El Mir² and Andrés Godoy¹

Compact Modeling of Two-Dimensional Field-Effect Biosensors.

Sensors 2023, 23, 1840.

DOI: 10.3390/s23041840

1 Pervasive Electronics Advanced Research Laboratory (PEARL), Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada,18071 Granada, Spain
2 Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE) LR05ES14, Faculty of Sciences of Gabes, Gabes University, Erriadh City, Zrig, 6072 Gabes, Tunisia

Abstract: A compact model able to predict the electrical read-out of field-effect biosensors based on two-dimensional (2D) semiconductors is introduced. It comprises the analytical description of the electrostatics including the charge density in the 2D semiconductor, the site-binding modeling of the barrier oxide surface charge, and the Stern layer plus an ion-permeable membrane, all coupled with the carrier transport inside the biosensor and solved by making use of the Donnan potential inside the ion-permeable membrane formed by charged macromolecules. This electrostatics and transport description account for the main surface-related physical and chemical processes that impact the biosensor electrical performance, including the transport along the low-dimensional channel in the diffusive regime, electrolyte screening, and the impact of biological charges. The model is implemented in Verilog-A and can be employed on standard circuit design tools. The theoretical predictions obtained with the model are validated against measurements of a MoS2 field-effect biosensor for streptavidin detection, showing excellent agreement in all operation regimes and leading the way for the circuit-level simulation of biosensors based on 2D semiconductors

FIG: Schematic of a two-dimensional field-effect biosensor. A sketch of the position-dependent potential is also shown, highlighting the surface charge density at the 2D channel (σ2D), at the oxide-electrolyte interface (σ0), and at the membrane-diffuse regions of the electrolyte (σmd). The latter comprises a charge-free layer (Stern layer) and an ion-permeable membrane due to the presence of charged macromolecules, with a diffusion layer located between the barrier oxide surface and the bulk electrolyte. The potential difference from the electrolyte bulk to the barrier oxide surface, ψ0, encompasses two contributions originating from a potential drop (ψ0 − ψm) across the Stern layer extending between the outer Helmholtz plane (OHP) and the barrier oxide surface, and a potential drop across the ion-permeable membrane layer formed by charged macromolecules and the diffuse layer (ψm)

Funding: This work is funded by the Spanish Government MCIN/AEI/10.13039/501100011033 through the projects PID2020-116518GB-I00 and TED2021-129769B-I00 (MCIU/AEI/FEDER-UE); and by FEDER/Junta de Andalucía-Consejería de Transformacion Económica, Industria, Conocimiento y Universidades through the projects P20_00633 and A-TIC-646-UGR20. F. Pasadas acknowledges funding from PAIDI 2020 and the European Social Fund Operational Programme 2014–2020 no. 20804. A. Medina-Rull acknowledges the support of the MCIN/AEI/PTA grant, with reference PTA2020- 018250-I. J. Cuesta-Lopez acknowledges the FPU program FPU019/05132, and A. Toral-Lopez the support of Plan Propio of Universidad de Granada.

Data Availability Statement: The Verilog-A model for 2D EIS BioFETs is available from the corresponding author (fpasadas@ugr.es) upon reasonable request.