[paper] Physical Mechanisms of Reverse DIBL and NDR in FeFETs With Steep Subthreshold Swing

C. Jin, T. Saraya, T. Hiramoto and M. Kobayashi,

in IEEE J-EDS, vol. 8, pp. 429-434, 2020

doi: 10.1109/JEDS.2020.2986345

Abstract - We have investigated transient IdVg and IdVd characteristics of ferroelectric field-effect transistor (FeFET) by simulation with ferroelectric model considering polarization switching dynamics. We show transient negative capacitance (TNC) with polarization reversal and depolarization effect can result in sub-60mV/dec subthreshold swing (SS), reverse drain-induced barrier lowering (R-DIBL), and negative differential resistance (NDR) without traversing the quasi-static negative capacitance (QSNC) region of the S-shaped polarization-voltage (PV) predicted by single-domain Landau theory. Moreover, the mechanisms of R-DIBL and NDR based on the TNC theory are discussed in detail. The results demonstrated in this work can be a possible explanation for the mechanism of previously reported negative capacitance field-effect transistor (NCFET) with sub-60mV/dec SS, R-DIBL, and NDR.

Equivalent circuits of a ferroelectric capacitor in both static and transient conditions.

#paper: W. E. Muhea, G. U. Castillo, H. C. Ordoñez, T. Gneiting, G. Ghibaudo and B. Iñiguez, "Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs," in IEEE J-EDS, vol. 8, pp. 407-412, 2020. https://t.co/SCTs7BsGJZ https://t.co/gZcCgMrYVd

#paper: W. E. Muhea, G. U. Castillo, H. C. Ordoñez, T. Gneiting, G. Ghibaudo and B. Iñiguez, "Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs," in IEEE J-EDS, vol. 8, pp. 407-412, 2020. https://t.co/SCTs7BsGJZ

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#paper: J. Leise et al., "Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs," in IEEE J-EDS, vol. 8, pp. 396-406, 2020. https://t.co/zk4BAp2tMj https://t.co/Ay502xHy1w

#paper: J. Leise et al., "Charge-Based Compact Modeling of Capacitances in Staggered Multi-Finger OTFTs," in IEEE J-EDS, vol. 8, pp. 396-406, 2020

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#paper: K. Xia, "New C∞ Functions for Drain–Source Voltage Clamping in Transistor Modeling," in IEEE TED, vol. 67, no. 4, pp. 1764-1768, April 2020. https://t.co/N9yGopiPNg https://t.co/9AKubeYY5x

#paper: K. Xia, "New C∞ Functions for Drain–Source Voltage Clamping in Transistor Modeling," in IEEE TED, vol. 67, no. 4, pp. 1764-1768, April 2020.https://t.co/N9yGopiPNg pic.twitter.com/9AKubeYY5x

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