Shahana Akter1, Md. Mirazur Rahman1 and Md. Arif Abdulla Samy2
Compact Analytical Modeling of Surface Potential
of a fully depleted Dual Material Double Gate MOSFET
Materials Mechatronics and Systems Engineering 2021, 1, 1. https://citescript.com/Journals/index.php/mmsj/
1 Department of EEE, Primeasia University
2 ATLAS Experiment, CERN
Abstract: Scaling transistors to gain speed while reducing capacitance and cost, is a key topic of today’s semiconductor industry, which is widely affected by Short-Channel Effects, the phenomenon that reduces efficiency. To dominate that unwanted effect, a 2-dimensional electrostatic potential modeling of the fully depleted channel, with high-k based dual material double gate (DMDG) MOSFET, has been developed in this paper. The expression for the electrostatic potential of DMDG has beendeveloped using 2-D Poisson’s equation with appropriate device boundary conditions. The device performance has been analyzed with the variation in device parameters, such as channel length, channel thickness, oxide thickness, and other key parameters. For authenticating, results have also been compared with state-of-the-art published results. This research was successful to exhibit that the proposed model could overcome Drain-induced Barrier Lowering, enhancing mobility carrier resulting to optimize short channel effect, which can bring a revolutionary change in transistor industry as well as in low power VLSI applications.
Fig: Device structure for the 2D double gate MOSFET
Acknowledgment: Authors would like to thank Professor Dr. Quazi Deen Mohd Khosru for his
guidance in every step of this research. Without his valuable and persistent help, it would not be
possible to conclude this project. The project has no external funding.
