[paper] Vertical Graphene–hBCN Heterostructure TFETs

A comparative computational study of tunneling transistors

based on vertical graphene–hBCN heterostructures

Mahsa Ebrahimi¹, Ashkan Horri¹, Majid Sanaeepur², and Mohammad Bagher Tavakoli¹

J. Appl. Phys. 127, 084504 (2020); DOI: 10.1063/1.5130777

Published Online: 28 February 2020

¹Department of Electrical Engineering, Arak Branch, Islamic Azad University, Arak, Iran
²Department of Electrical Engineering, Faculty of Engineering, Arak, Iran

ABSTRACT In this paper, the electrical characteristics of tunneling transistors based on vertical graphene and a hexagonal boron-carbon-nitrogen (hBCN) heterostructure are studied and compared theoretically. We have considered three different types of hBCN, i.e., BC₂N, BC₂N₀, and BC₆N as a tunneling barrier. Our simulation is based on the nonequilibrium Green’s function formalism along with an atomistic tightbinding (TB) model. The TB parameters are obtained by fitting the band structure to first-principles results. By using this method, electrical characteristics of the device, such as the ION=IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. For a fair comparison, the effects of geometrical variations and number of tunneling barrier layers on the electrical parameters of the device are simulated and investigated. We show that, by an appropriate design, the device can be used for low-power or high-performance applications. The device allows current modulation exceeding 106 at room temperature for a 0.6 V bias voltage.

FIG. DFT Band structure for (a) graphene - hBC₂N₀ - graphene (b) graphene - hBC₂N - graphene and (c) graphene - hBC₆N - graphene supercell. BC and BV represent barrier height in the conduction band and valence band, respectively, all simulated with QUANTUM ESPRESSO: A modular and opensource software for quantum simulations of materials

OFETs Compact Modeling

Advances in Compact Modeling of Organic Field-Effect Transistors

Sungyeop Jung¹, Member, IEEE, Yvan Bonnassieux², Gilles Horowitz², Sungjune Jung¹, Member, IEEE, Benjamin Iñiguez³, Fellow, IEEE, and Chang-Hyun Kim⁴, Senior Member, IEEE

IEEE J-EDS (Early Access)

DOI: 10.1109/JEDS.2020.3020312

¹Future IT Innovation Laboratory and Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea.
²LPICM, Ecole Polytechinque, CNRS, 91128 Palaiseau, France.

³DEEEA, Universitat Rovira i Virgili, Tarragona 43007, Spain.

⁴Department of Electronic Engineering, Gachon University, Seongnam 13120, South Korea

Abstract: In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device- and system-level development, is clearly one of the most critical issues. This paper broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

Figure (a) Cross-sectional illustration and (b) circuit diagram with multi-component overlap capacitances of the printed 3-D organic complementary inverter, and (c) measured and simulated transient output voltage of an 11-stage ring oscillator.

#Special Issue: The 11th International Symposium on Electric and Magnetic Fields (#EMF 2018) https://t.co/pVDWOoLXC4 #paper https://t.co/HqmYxemttD

#Special Issue: The 11th International Symposium on Electric and Magnetic Fields (#EMF 2018) https://t.co/pVDWOoLXC4 #paper pic.twitter.com/HqmYxemttD

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from Twitter https://twitter.com/wladek60

September 04, 2020 at 10:39AM
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[eBook] download figures: POWER/HVMOS Devices Compact Modeling

27/08/2020 Today we are pleased to share your Annual Book Performance Report with you, which summarizes the number of chapter downloads* in the first half of this year, the calendar year 2019 and previous years as applicable. POWER/HVMOS Devices Compact Modeling Year Usage 01/2020 - 06/2020 285 2019 599 2018 656 2017 766 2016 843 2015 912 2014 1333 2013 658 2012 420 2011 401 2010 463 *Since its online publication on Jun 10, 2010, there have been a total of 7336 chapter downloads for your eBook on SpringerLink. The table above shows the download figures for the last year(s). Share the  book's homepage

Broadband Measurements to 220 GHz

VectorStar ME7838G 70 kHz to 220 GHz Single Sweep VNA Measurements and On-Wafer Calibrations

• Miniature mmWave MA25400A NLTL module connects directly to probes without cables for best dynamic range and stability
• MPI TITAN Probes available in 50, 75, and 100 um pitch
• Probes are field replaceable

On-wafer calibrations:

• SOLT up 40 or 70 GHz if standards provide required performance
• LRM, ALRM, LRRM, and multiline TRL up to 220 GHz
• SOLR when thru is not 0 length, is not well matched, insertion loss is less known, and there is no .s2p file describing the thru

Calibration substrates:

• Available from MPI
• When possible, use a ceramic chuck to minimize the potential for multimode parasitic propagation.
• Alternatively, use an isolation wafer on metal chuck if available

[paper] Wearable Energy Harvester

A Piezoelectric-Transducer-Biased 3-D Photosensitive Thin-Film Transistor

as a Dual-Mode Wearable Energy Harvester

Emad Iranmanesh¹, Weiwei Li^2,3, Ahmed Rasheed^2,3, and Kai Wang^2,3 (Member IEEE)

IEEE EDL, Vol. 41, No. 9, Sept. 2020

DOI: 10.1109/LED.2020.3009685

¹School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510006, China.
²Guangdong Provincial Key Laboratory of Display Material and Technology, Sun Yat-sen University, Guangzhou 510006, China
³State Key Laboratory of Optoelectronic Materials and Technologies, School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510006, China

Abstract: This letter reports on a dual-mode wearable energy harvester that utilizes both piezoelectric and photoelectric effects. It integrates a piezoelectric transducer with a 3-D photosensitive dual-gate thin-film transistor (DGTFT) as a rectifier and a buffer. The energy conversion efficiency is enhanced by reducing the internal resistance of the 3-D photosensitive DGTFT upon light illumination. Such a dual-mode energy harvester is promising for wearable electronics.

Fig.: a) Schematic diagram of the proposed wearable dual-mode energy harvester formed by a polyvinylidene difluoride (PVDF) transducer integrated with a self-driven diode-connected 3-D photosensitive DGTFT as a buffer and a rectifier;  b) Equivalent circuit of the proposed dual-mode harvester.

Acknowlwgement: This work was supported by the Guangdong Innovative Research and Entrepreneurial Team Program under Grant 2014ZT05D340