Showing posts with label device physics. Show all posts
Showing posts with label device physics. Show all posts

Feb 9, 2022

[book] Nano Interconnects: Device Physics, Modeling and Simulation

Afreen Khursheed and Kavita Khare
Nano Interconnects: Device Physics, Modeling and Simulation
CRC Press; 1st edition (2021)
ISBN: ‎ 978-0367610487

This textbook comprehensively covers on-chip interconnect dimension and application of carbon nanomaterials for modeling VLSI interconnect and buffer circuits. It provides analysis of ultra-low power high speed nano-interconnects based on different facets such as material modeling, circuit modeling and the adoption of repeater insertion strategies and measurement techniques. It covers important topics including on-chip interconnects, interconnect modeling, electrical impedance modeling of on-chip interconnects, modeling of repeater buffer and variability analysis. Pedagogical features including solved problems and unsolved exercises are interspersed throughout the text for better understanding. Aimed at senior undergraduate and graduate students in the field of electrical engineering, electronics and communications engineering for courses on Advanced VLSI Interconnects, Advanced VLSI Design, VLSI Interconnects, VLSI Design Automation and Techniques, this book:

  • Provides comprehensive coverage of fundamental concepts related to nanotube transistors and interconnects.
  • Discusses properties and performance of practical nanotube devices and related applications.
  • Covers physical and electrical phenomena of carbon nanotubes, as well as applications enabled by this nanotechnology.
  • Discusses the structure, properties, and characteristics of graphene-based on-chip interconnect.
  • Examines interconnect power and interconnect delay issues arising due to downscaling of device size.

Sep 7, 2020

OFETs Compact Modeling

Advances in Compact Modeling of Organic Field-Effect Transistors
Sungyeop Jung1, Member, IEEE, Yvan Bonnassieux2, Gilles Horowitz2, Sungjune Jung1, Member, IEEE, Benjamin IƱiguez3, Fellow, IEEE, and Chang-Hyun Kim4, Senior Member, IEEE
IEEE J-EDS (Early Access)
DOI: 10.1109/JEDS.2020.3020312

1Future IT Innovation Laboratory and Department of Creative IT Engineering, Pohang University of Science and Technology, Pohang 37673, South Korea.
2LPICM, Ecole Polytechinque, CNRS, 91128 Palaiseau, France.
3DEEEA, Universitat Rovira i Virgili, Tarragona 43007, Spain.
4Department of Electronic Engineering, Gachon University, Seongnam 13120, South Korea

Abstract: In this review, recent advances in compact modeling of organic field-effect transistors (OFETs) are presented. Despite the inherent strength for printed flexible electronics and the extremely aggressive research conducted over more than three decades, the OFET technology still seems to remain at a relatively low technological readiness level. Among various possible reasons for that, the lack of a standard compact model, which effectively bridges the device- and system-level development, is clearly one of the most critical issues. This paper broadly discusses the essential requirements, up-to-date progresses, and imminent challenges for the OFET compact device modeling toward a universal, physically valid, and applicable description of this fast-developing technology.

Figure (a) Cross-sectional illustration and (b) circuit diagram with multi-component overlap capacitances of the printed 3-D organic complementary inverter, and (c) measured and simulated transient output voltage of an 11-stage ring oscillator.



Jan 21, 2014

Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives

In spite of impressive improvements achieved for organic field-effect transistors (OFETs), there is still a lack of theoretical understanding of their behaviors. Furthermore, it is challenging to develop a universal model that would cover a huge variety of materials and device structures available for state-of-the-art OFETs. Nonetheless, currently there is a strong need for specific OFET compact models when device-to-system integration is an important issue. We briefly describe the most fundamental characters of organic semiconductors and OFETs, which set the bottom line dictating the requirement of an original model different from that of conventional inorganic devices. Along with an introduction to the principles of compact modeling for circuit simulation, a comparative analysis of the reported models is presented with an emphasis on their primary assumptions and applicability aspects. Critical points for advancing OFET compact models are discussed in consideration of the recent understanding of device physics.

[1] Kim, C.-H.; Bonnassieux, Y.; Horowitz, G., "Compact DC Modeling of Organic Field-Effect Transistors: Review and Perspectives," Electron Devices, IEEE Transactions on , vol.61, no.2, pp.278,287, Feb. 2014
doi: 10.1109/TED.2013.2281054
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