[book] Compact Models for Integrated Circuit Design

 Compact Models for Integrated Circuit Design: 

 Conventional Transistors and Beyond

 Samar K. Saha

Taylor & Francis, 26 Aug 2015 - Technology & Engineering - 545 pages - ISBN 9781482240665

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond provides a modern treatise on compact models for circuit computer-aided design (CAD). Written by an author with more than 25 years of industry experience in semiconductor processes, devices, and circuit CAD, and more than 10 years of academic experience in teaching compact modeling courses, this first-of-its-kind book on compact SPICE models for very-large-scale-integrated (VLSI) chip design offers a balanced presentation of compact modeling crucial for addressing current modeling challenges and understanding new models for emerging devices.

Starting from basic semiconductor physics and covering state-of-the-art device regimes from conventional micron to nanometer, this text:

• Presents industry standard models for bipolar-junction transistors (BJTs), metal-oxide-semiconductor (MOS) field-effect-transistors (FETs), FinFETs, and tunnel field-effect transistors (TFETs), along with statistical MOS models
• Discusses the major issue of process variability, which severely impacts device and circuit performance in advanced technologies and requires statistical compact models
• Promotes further research of the evolution and development of compact models for VLSI circuit design and analysis
• Supplies fundamental and practical knowledge necessary for efficient integrated circuit (IC) design using nanoscale devices
• Includes exercise problems at the end of each chapter and extensive references at the end of the book

Compact Models for Integrated Circuit Design: Conventional Transistors and Beyond is intended for senior undergraduate and graduate courses in electrical and electronics engineering as well as for researchers and practitioners working in the area of electron devices. However, even those unfamiliar with semiconductor physics gain a solid grasp of compact modeling concepts from this book. [more...]

Programme of the 4th Training Course on Compact Modeling

The 4th Training Course on Compact Modeling (TCCM) will take place in Tarragona (Catalonia, Spain) from June 27 to 28 2016.

The 4th TCCM is partially sponsored by the DOMINO EU H2020 project. It will consist a series of lectures conducted by prestigious researchers in the field of modeling of semiconductor devices, dealing with several issues related to the semiconductor device modeling, mostly compact/SPICE modeling. It is a very interesting event to PhD students and young researchers, but can interest senior researchers too. These lectures will be conducted by top experts in the field. 

No doubt the 4th TCCM will be useful to researchers working on compact modeling, but also to researchers working on circuit design, numerical modeling, device characterization and semiconductor device technology.

TCCM is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona. The General Chair of TCCM is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project.

Programme of TCCM:

June 27 2016
8:30	Opening Benjamin Iñiguez (Universitat Rovira i Virgili)
8:55	"Compact modeling for biological applications". Morgan Madec (Université de Strasbourg, France)
10:05	"TCAD and semiclassical device modeling"  Christoph Jungemann (RWTH-AAchen, Germany)
11:15	Coffe Break
11:40	"Modeling and experimental verification of mechanical stress effects in  ultra-thin Si MOSFET devices integrated into flexible packages. " Heidrun Alus (AdMOS GmbH, Germany)
12:50	"Device simulation for Organic Electronics using GENIUS" Heinz Olav Müller (Plastic Logic GmbH, Germany))
14:00	Lunch
15:15	"TCAD for compact model development" Ahmed Nejim (Silvaco Europe Ltd. , UK)
16:25	"Modelling of Amorphous-Oxide-Semiconductors TFTs for large-area flexible electronics" Fabrizio Torricelli (University of Brescia, Italy)
20:30	Gala Dinner
June 28 2016
8:45-14:00  Mini-Colloquium on Compact Modeling and Parameter Extraction
8:45	"An Integrated Approach for Circuit Performance and Reliability Simulation" Mansun Chan (Hong Kong University of Science and Technology)
9:55	"Static and dynamic characterization of SiC based MOSFETs/IGBTs" Muhammad Nawaz (ABB Sweden)
11:05	Coffee Break
11:30	“Model parameter extraction” Antonio Cerdeira (CINVESTAV Mexico)
12:50	"Compact modeling for AlGaN/GaN HEMTs" Benjamin Iñiguez (URV)
14:00	Lunch
15:15	"Application of compact models for organic circuit design" Eugenio Cantatore (TU-Eindhoven, The Netherlands)
16:25	« Mathematical and Semi-physical compact modeling for emerging technologies” Firas Mohamed (Infiniscale, France)
17:35	End of the Training Course

Besides, on June 29 1016, the  Workshop on Flexible Electronics (WFE) will take place in Tarragona, too. Attendees to TCCM who work on Flexible Electronics (not necessarily modeling) will have a chance to present recent results on their own. But WFE is open to all researchers.

Registration to both events is open. It is possible to register only to TCCM, or only to WFE or to both. It is quite cheap, in partular for students, and includes lunches, coffee breaks, and in the case of TCCM, a gala dinner.

Finally, on June 30-July 1 the Annual Graduate Student Meeting on Electronic Engineering will be held, consisting of plenary talks by prestigious researchers and student presentations. Registration is free.

I encourage researchers on semiconductor devices and circuit design to attend TCCM!

Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A https://t.co/J8R9fcdtDu #papers #feedly

Modeling and simulation of nanomagnetic logic with cadence virtuoso using Verilog-A https://t.co/J8R9fcdtDu #papers #feedly

— Wladek Grabinski (@wladek60) June 11, 2016

from Twitter https://twitter.com/wladek60

June 11, 2016 at 01:22PM
via IFTTT

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects https://t.co/YanqSVXH3q #papers #feedly

Improved modeling of GaN HEMTs for predicting thermal and trapping-induced-kink effects https://t.co/YanqSVXH3q #papers #feedly

— Wladek Grabinski (@wladek60) June 8, 2016

from Twitter https://twitter.com/wladek60

June 08, 2016 at 01:44PM
via IFTTT

A novel approach for the modeling of HEMT high power device https://t.co/rDLgFItU1g #papers #feedly

A novel approach for the modeling of HEMT high power device https://t.co/rDLgFItU1g #papers #feedly

— Wladek Grabinski (@wladek60) June 6, 2016

from Twitter https://twitter.com/wladek60

June 06, 2016 at 06:38PM
via IFTTT

A new constituent of electrostatic energy in semiconductors

 A new constituent of electrostatic energy in semiconductors

 An attempt to reformulate electrostatic energy in matter

 

 Jean-Michel Sallese

 Swiss Federal Institute of Technology Lausanne Switzerland 

Received: 30 October 2015

Received in final form: 29 January 2016

Published online: 1 June 2016

Eur. Phys. J. B, 89 6 () 136
DOI: http://dx.doi.org/10.1140/epjb/e2016-60865-4

Abstract: The concept of electric energy is revisited in detail for semiconductors. We come to the conclusion that the main relationship used to calculate the energy related to the penetration of the electric field in semiconductors is missing a fundamental term. For instance, spatial derivate of the electrostatic energy using the traditional formula fails at giving the correct electrostatic force between semiconductor based capacitor plates, and reveals unambiguously the existence of an extra contribution to the standard electrostatic free energy. The additional term is found to be related to the generation of space charge regions which are predicted when combining electrostatics with semiconductor physics laws, such as for accumulation and inversion layers. On the contrary, no such energy is needed when relying on electrostatics only, as for instance when adopting the so-called full depletion approximation. The same holds for neutral and charged insulators that are still consistent with the customary definition, but these two examples are in fact singular cases. In semiconductors for instance, this additional energy can largely exceed the energy gained by the dipoles, thus becoming the dominant term. This unexpected result clearly asks for a generalization of electrostatic energy in matter in order to reconcile basic concepts of electrostatic energy in the framework of classical physics.

Keywords: Solid State and Materials

© The Author(s) 2016. This article is published with open access at Springerlink.com

Workshop on Flexible Electronics

The Workshop on Flexible Electronics (WFE) will be held on June 29 2016 in Tarragona (Catalonia, Spain) in combination with the 4th Training Course on Compact Modeling (TCCM, June 27-28).

The Workshop on Flexible Electronics (WFE) will provide a forum for discussions and current trends and practices on Flexible Electronics, including materials, technology, device characterization, device modeling and circuit design.  The WFE workshop is organized by the Department of Electronic, Electrical and Automatic Control Engineering (DEEEiA) of the Universitat Rovira i Virgili (URV), in Tarragona and the Fundació Universitat Rovira i Virgili (FURV), and is co-sponsored by the EU-funded DOMINO projecct and the Spanish Thematic Network REFLEXIO.  

The General Chair of WFE is Prof. Benjamin Iñiguez, who is also the Coordinator of the DOMINO project.

 A partial list of the areas of interest includes:

• Organic and Flexible Photovoltaic device technologies
• Organic and Flexible LED technologies
• TFT technologies for Flexible and Printed Electronics
• Interconnects in Flexible Electronics
• Physics, characterization and modeling of devices for Flexible Electronics
• Circuit design for Flexible and Printed Electronics

The deadline for a 500 word abstract submission is May 29 2016.

Attendees to TCCM who work on Flexible Electronics (not necessarily modeling) will have a chance to present recent results on their own. But WFE is open to all researchers.

Besides, attending TCCM can be of interest to potential WFE participants, since several TCCM lectures target modeling issues of devices for Flexible Electronics (in particular, Thin-Film Transistors), or modeling aspects that can be applied to many semiconductor devices.

Registration to both events is open. It is possible to register only to WFE, or only to TCCM or to both. It is quite cheap, in partular for students, and includes lunches, coffee breaks, and in the case of TCCM, a gala dinner.

Finally, on June 30-July 1 the Annual Graduate Student Meeting on Electronic Engineering will be held, consisting of plenary talks by prestigious researchers and student presentations. Registration is free.

Tarragona is about 100 Km south from Barcelona, on the coast (the so-called "Costa Daurada", Golden Coast). Traveling to Tarragona from Barcelona is easier. There are frequent direct buses between Tarragona and Barcelona Airport, and also frequent trains between Tarragona and Barcelona. Besides, from some European cities it is possible to fly to Reus Airport, which is about 10 Km from Tarragona.

Tarragona is one of the most  important hubs of tourism in Europe, not only because of the nice beaches around the city, but also because of its historical landmarks.. Tarragona was a very important city of the Roman Empire. In 2000 UNESCO committee officially declared the Roman archaeological complex of Tarraco (name of Tarragona during the Roman Empire) a World Heritage Site. This recognition is intended to help ensure the conservation of the monuments, as well as to introduce them to the broader international public.

I encourage researchers on  Flexible Electronics to send abstracts to  WFE!