* Parametric Test Group, Advantest America, San Jose, CA 95134 United States
FIG
: Reference Ids-Vgs Curve with Gm curveB2Q8 device 2N7002 NMOS Transistor
at Vds = 0.05 Gm(max) 0.02272 at Vgs 2.25V; Extrap tangent line at 1.8665V
FIG
: Reference Ids-Vgs Curve with Gm curveB2Q8 device 2N7002 NMOS Transistor
at Vds = 0.05 Gm(max) 0.02272 at Vgs 2.25V; Extrap tangent line at 1.8665V
Abstract : In high-energy physics, there is a need to investigate alternative silicon sensor concepts that offer cost-efficient, large-area coverage. Sensors based on CMOS imaging technology present such a silicon sensor concept for tracking detectors. The CMOS Strips project investigates passive CMOS strip sensors fabricated by LFoundry in a 150 nm technology. By employing the technique of stitching, two different strip sensor formats have been realised. The sensor performance is characterised based on measurements at the DESY II Test Beam Facility. The sensor response was simulated utilising Monte Carlo methods and electric fields provided by TCAD device simulations. This study shows that employing the stitching technique does not affect the hit detection efficiency. A first look at the electric field within the sensor and its impact on generated charge carriers is being discussed.
Fig : Schematic layout of the Regular (a) and Low Dose 30/55 (b) strip implant designs
Acknowledgements : The measurements leading to these results have been performed at the Test Beam Facility at DESY Hamburg (Germany), a member of the Helmholtz Association (HGF).
Logic area (NAND2) | 1.1 MGE |
Logic levelsa | 51 LL |
Technology | 130 nm IHP |
Operating frequency | 77 MHz |
SRAM memory | 172 KiB (24 macros) |
Chip / core area | 39 mm / 21 mm |
IO count | 69 |
1. Introduction2. The status quo in the UK3. Problems with the status quo4. Three asks of a new UK Government5. Vision: Giving back control through Open Source6. Key benefits to UK economy by giving back control through Open Source