A Compact and Robust Technique for the Modeling and Parameter Extraction
of Carbon Nanotube Field Effect Transistors
Laura Falaschetti1, Davide Mencarelli1, Nicola Pelagalli1, Paolo Crippa1, Giorgio Biagetti1,
Claudio Turchetti1,George Deligeorgis2, and Luca Pierantoni1
Electronics 2020, 9(12), 2199;
DOI: 10.3390/electronics9122199
1 Department of Information Engineering, Marche Polytechnic University, 60131 Ancona, Italy
2 Microelectronics Research Group (MRG/IESL), FORTH, GreeceAbstract: Carbon nanotubes field-effect transistors (CNTFETs) have been recently studied with great interest due to the intriguing properties of the material that, in turn, lead to remarkable properties of the charge transport of the device channel. Downstream of the full-wave simulations, the construction of equivalent device models becomes the basic step for the advanced design of high-performance CNTFET-based nanoelectronics circuits and systems. In this contribution, we introduce a strategy for deriving a compact model for a CNTFET that is based on the full-wave simulation of the 3D geometry by using the finite element method, followed by the derivation of a compact circuit model and extraction of equivalent parameters. We show examples of CNTFET simulations and extract from them the fitting parameters of the model. The aim is to achieve a fully functional description in Verilog-A language and create a model library for the SPICE-like simulator environment, in order to be used by IC designers.
Figure 2. 3D structure of CNTFET. Reprinted, with permission, from [I and II]
Aknowlwgement: This research was supported by the European Project “NANO components for electronic SMART wireless circuits and systems (NANOSMART)”, H2020—ICT-07-2018-RIA, n. 825430.
References:
[I] Deng, J.; Wong, H.P. A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including non-idealities and Its Application—Part I: Model of the Intrinsic Channel Region. IEEE Trans. Electron Devices 2007, 54, 3186–3194
[II] Deng, J.; Wong, H.P. A Compact SPICE Model for Carbon-Nanotube Field-Effect Transistors Including non-idealities and Its Application—Part II: Full Device Model and Circuit Performance Benchmarking. IEEE Trans. Electron Devices 2007, 54, 3195–3205
