[mos-ak] [Workshop Program] 15th MOS-AK ESSDERC/ESSCIRC Workshop in Leuven Sept.11 2017

15th MOS-AK ESSDERC/ESSCIRC Compact Modeling Workshop

Leuven; Monday Sept.11, 2017 (8:30-17:00)

Workshop Program online http://www.mos-ak.org/leuven_2017/ 

Together with International MOS-AK Board of R&D Advisers: Larry Nagel, Omega Enterprises Consulting (USA), Andrei Vladimirescu, UCB (USA); ISEP (FR) and Jean-Michel Sallese, EPFL (CH), Daniel Tomaszewski, ITE (PL), MOS-AK Technical Program Coordinators as well as all the Extended MOS-AK TPC Members, we have pleasure to invite to the 15th consecutive MOS-AK workshop organized as an integral part of the ESSDERC/ESSCIRC Conferences in Leuven on Sept.11, 2017. The MOS-AK workshop is organized with aims to strengthen a network and discussion forum among experts in the field, enhance open platform for information exchange related to the compact/SPICE modeling and its Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Final Program of 15th MOS-AK ESSDERC/ESSCIC Workshop is available online:

http://www.mos-ak.org/leuven_2017/

Venue: 

KU LEUVEN Campus of Social Sciences 

(Parkstraat 45, 3000 Leuven) 

room AV 91.12

Online MOS-AK/Leuven Workshop Registration:

http://www.esscirc-essderc2017.org/howtoregister

(any related inquiries can be sent to register@mos-ak.org)

The MOS-AK workshop will be followed by four session of the ESSDERC Track4 "Device and Circuit Compact Modeling". These four lecture sessions include one invited and 14 pear reviewed papers in the compact/SPICE modeling and Verilog-A standardization domain:

Tuesday September 12, 2017 (11:00-12:20)

Cross-Domain Compact Modeling  

Chair: Wladek Grabinski - MOS-AK; Cristell Maneux - U-Bordeaux;

Tuesday September 12, 2017 (14:00-15:20)

Parameter Extraction  

Chair: Thierry Poiroux - CEA

Tuesday September 12, 2017 (16:40-18:00)

Modeling of Emerging Devices  

Chair: Jean-Michel Sallese - EPFL; Daniel Tomaszewski - ITE;

Wednesday September 13, 2017 (14:20-15:40)

Traps and Noise  

Chair: Benjamin Iniguez - URV; Sadayuki Yoshitomi - Toshiba;

MOS-AK Postworkshop Publications:

Selected best MOS-AK technical presentation will be recommended for further publication

in a special issue of the International Journal of High Speed Electronics and Systems 

Extended MOS-AK Committee

WG170817

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Review of commercial SiC MOSFET models: Topologies and equations - IEEE Xplore #paper https://t.co/LS090HojeE

Review of commercial SiC MOSFET models: Topologies and equations - IEEE Xplore #paper https://t.co/LS090HojeE

— Wladek Grabinski (@wladek60) August 16, 2017

from Twitter https://twitter.com/wladek60

August 16, 2017 at 11:22AM
via IFTTT

[paper] Compact Electro-Mechanical-Fluidic Model for Actuated Fluid Flow System

Compact Electro-Mechanical-Fluidic Model for Actuated Fluid Flow System

T. K. Maiti, Member, IEEE, L. Chen, H. Zenitani, H. Miyamoto, Member, IEEE,

M. Miura-Mattausch, Fellow, IEEE, and H. J. Mattausch, Senior Member, IEEE

in IEEE Journal on Multiscale and Multiphysics Computational Techniques, 

vol. 2, no. , pp. 124-133, 2017.

doi: 10.1109/JMMCT.2017.2731878

Abstract: This paper presents a compact electro-mechanical-fluidic system-modeling method for multidomain system simulation based on multidomain physics that considers the total energy conservation condition, in terms of respective potential and flow quantities. Models for electrical, mechanical, and fluidic domains are developed to design the example of a blood pumping system, where the blood flow is driven by electrically controlled organic actuators. The electrical domain includes an organic mosfet-based control circuit, the mechanical domain includes organic actuators, and the fluidic domain includes a flexible fluid-flow channel. Control circuit, actuators, and fluid models are coupled through equivalent circuits, where interconnection relationships between two neighboring domains are expressed using the energy conservation concept. The model accuracy is verified with finite element method (FEM) based numerical simulation. Significantly faster simulation speed than with FEM and good accuracy were achieved [read more...]

TABLE: CORRESPONDING FORCE AND FLOW EQUATIONS FOR ELECTRICAL AND
MECHANICAL DOMAINS ARE SUMMARIZED [21]-[23]

[21] S. D. Senturia, Microsystems Design. Norwell, MA: Kluwer Academic Publisher, 2001.

[22] T. K. Maiti, L. Chen, H. Miyamoto, M. Miura-Mattausch, and H. J. Mattausch, “Modeling of electrostatically actuated fluid flow system for mixed-domain simulation,” in 20th Int. Conf. on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 190-193, Sept. 2015, USA.

[23] T. K. Maiti, L. Chen, H. Miyamoto, M. Miura-Mattausch, and H. J. Mattausch, “Mixed domain compact modeling framework for fluid flow driven by electrostatic organic actuators,” in 45th European Solid-State Device Research Conference (ESSDERC), pp. 52-55, Sept. 2015, Austria. 

A General and Transformable #Model Platform for Emerging Multi-Gate MOSFETs - IEEE Xplore Document https://t.co/q27OgRX5Fd

A General and Transformable #Model Platform for Emerging Multi-Gate MOSFETs - IEEE Xplore Document https://t.co/q27OgRX5Fd

— Wladek Grabinski (@wladek60) August 14, 2017

from Twitter https://twitter.com/wladek60

August 14, 2017 at 02:01PM
via IFTTT

Mini-Colloquium (MQ) on Nanoelectronics

AGENDA
DATE: Saturday Aug. 26, 2016

VENUE: IIT Kanpur L16

This Mini-Colloquium (MQ) on Nanoelectronics is being hosted by the IEEE Electron Device Society UP Chapter in collaboration with the Department of Electrical Engineering at IIT Kanpur. Distinguished speakers from renowned universities will be presenting on wide range of topics in Nanoelectronics. The MQ will be organized into 1 hour talks by the speakers. The agenda would be as follows:

Time	Topic	Speaker
9:00 - 9:15	Inauguration
9:15 - 9:30	High Tea
9:30 - 10:30	Nanotransistors with 2D materials: Opportunities and Challenges	Prof. Navkanta Bhat IISc
10:30 - 11:30	Revisiting gate C-V characterization for high mobility semiconductor MOS devices	Prof. Anisul Haque East West Univ.
11:30 - 11:45	Tea
11:45 - 12:45		Prof. V. Ramgopal Rao IIT Delhi
12:45 - 14:15	Lunch
14:15 - 15:15	ASM-HEMT - First Industry Standard Compact Model for GaN HEMTs	Prof. Yogesh Singh Chauhan IIT Kanpur
15:15 - 16:15	Spintronics - Perspectives and Challenges	Prof. Brajesh Kumar Kaushik IIT Roorkee
16:15 - 16:30	Tea
16:30 - 17:30	Advanced Hetero structure based Nano Scale MOSFETs	Prof. Chandan Kumar Sarkar Jadavpur Univ.

Coordinator: Dr. Yogesh S.Chauhan IIT Kanpur, India
Website: http://www.iitk.ac.in/nanolab/MQ/index.html