Mar 25, 2016

Compact Model of Amorphous InGaZnO TFTs Based on the Symmetric Quadrature of the Accumulation Charge https://t.co/JOZujeE4t4 #papers #feed…


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March 25, 2016 at 04:26PM
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A Comprehensive Compact Model for GaN HEMTs, Including QSState and Transient Trap-Charge Effects https://t.co/ppJacttDhQ #papers #feedly


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March 25, 2016 at 04:15PM
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Mar 23, 2016

Moore's Law stutters: Intel officially puts “tick-tock” CPU release cycle on hiatus https://t.co/dyO9ovPlEY #papers


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March 23, 2016 at 05:24PM
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Mar 22, 2016

A procedure for the extraction of a nonlinear microwave GaN FET model https://t.co/I7qkVEnOKm #papers #feedly


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March 22, 2016 at 01:04PM
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Mar 18, 2016

What China’s latest five-year plan means for science https://t.co/qHVPEjGLJJ #papers #feedly


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March 18, 2016 at 08:33PM
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Mar 10, 2016

[mos-ak] [Final Program] Spring MOS-AK Workshop Dresden March 18 2016

MOS-AK Workshop in DATE Conference Timeframe
Dresden, March 18 2016
The Final MOS-AK Workshop Program

Together with the MOS-AK Workshop Scientific Program Coordinators Larry Nagel and Andrei Vladimirescu, Extended MOS-AK TPC Committee as well as local organizers Martin Claus, CFAED, TU Dresden (D), Sandra Bley, CFAED, TU Dresden (D) and Alexander Petr, XFab, (D), we have pleasure to invite to the MOS-AK Workshop which will be held in Dresden on March 18, 2016. The MOS-AK workshop is organized with aims to strengthen an academic/industry network and discussion forum among experts in the field, enhance open platform for information exchange related to compact/SPICE modeling and Verilog-A standardization, bring people in the compact modeling field together, as well as obtain feedback from technology developers, circuit designers, and CAD/EDA tool developers and vendors. 

Venue:   
Center for Advancing Electronics Dresden (CFAED)
Technische Universität Dresden
Würzburger Str. 46
01187 Dresden
Germany

Free Online Workshop Registration:
<http://www.mos-ak.org/dresden_2016/registration.php>
(any related inquiries can be sent to registration@mos-ak.org)

The Workshop Agenda and its Program is available online:
<http://www.mos-ak.org/dresden_2016/>

Postworkshop Publications:
Selected best MOS-AK technical presentation will be recommended for further publication in a special compact modeling issue of the International Journal of High Speed Electronics and Systems (IJHSES)

Extended MOS-AK Committee

WG10032016

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Mar 4, 2016

Numerical Analysis of Terahertz Emissions From an Ungated HEMT Using Full-Wave Hydrodynamic Model https://t.co/CJxKRangmP #papers #feedly


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March 04, 2016 at 08:49AM
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Feb 27, 2016

Adding Spice to Your Workbench https://t.co/TI79vLiaOO #todo #feedly #papers


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February 27, 2016 at 11:41PM
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CMOS-SOI-MEMS Thermal Antenna and Sensor for Uncooled THz Imaging https://t.co/PiU56kluPf #papers #feedly


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February 27, 2016 at 11:12PM
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Electrical Characterization of FDSOI by Capacitance Measurements in Gated p-i-n Diodes https://t.co/HtDcvhqiF1 #papers #feedly #papers


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February 27, 2016 at 01:32PM
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Feb 26, 2016

An Experimental Demonstration of GaN CMOS Technology https://t.co/9Q50HGFkni #papers


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February 26, 2016 at 10:57PM
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Subthreshold Kink Effect Revisited and Optimized for Si Nanowire MOSFETs https://t.co/9Q50HGFkni #papers


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February 26, 2016 at 10:50PM
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Negative Capacitance Field Effect Transistor With Hysteresis-Free Sub-60-mV/Decade Switching https://t.co/9Q50HGFkni #papers


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February 26, 2016 at 10:37PM
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Feb 24, 2016

Keysight: Full SPICE Characterization Flow

Keysight Technologies offers half a daya seminar at IEMN, Villeneuve d’Ascq. This free seminar is an opportunity to discover "Full SPICE Characterization Flow". The content is open, based on practical industrial and academic examples to illustrate the features of Keysight CAD/EDA software tools:
  • Introduction (20 min)
  • Part 1 - Measurements Automatization (30 min)
  • Part 2 - Spice Model Extraction  (60 min)
  • Part 3 - Quality Assurance Model (20 mins)
  • Q/A Session (20 min)
Place: Grand Amphithéâtre de l’IEMN, Laboratoire Centrale, Avenue Henri Poincaré F-59491 Villeneuve d’Ascq (F)
Date 17 March 2016

[Register online]

LibreCAD: Call for Your POTM Vote

The vote for April 2016 Community Choice SourceForge Project of the Month is now available, and will run until March 15, 2016 12:00 UTC. Here is one of the candidates:
LibreCAD is a fully comprehensive 2D CAD application that you can download and install for free. LibreCAD is an Open Source community-driven project: development is open to new talent and new ideas, and our software is tested and used daily by a large and devoted user community; you, too, can get involved and influence its future development. LibreCAD has GPLv2 public license – you can use it, customize it, hack it and copy it with free user support and developer support from our active worldwide community and our experienced developer team. There is a large base of satisfied LibreCAD users worldwide, and it is available in more than 20 languages and for all major operating systems, including Microsoft Windows, Mac OS X and Linux, including Debian, Ubuntu, Fedora, Mandriva, Suse, etc. 

Feb 22, 2016

Alliance: FOSS VLSI/CAD System



Alliance is a complete set of free cad tools and portable libraries for VLSI design. It includes a VHDL compiler and simulator, logic synthesis tools, and automatic place and route tools. A complete set of portable CMOS libraries is provided. Alliance is the result of a twelve year effort spent at SoC department of LIP6 laboratory of the Pierre & Marie Curie University (Paris VI, France). Alliance has been used for research projects such as the 875 000 transistors StaCS superscalar microprocessor and 400 000 transistors IEEE Gigabit HSL Router.

Alliance VLSI CAD System is free software. Binaries, source code and cells libraries are freely available under the GNU General Public License (GPL). You are welcome to use the software package even for commercial designs without any fee. You are kindly requested to mention: "Designed with Alliance © LIP6, Université Pierre et Marie Curie".

ICs Designed with Alliance
  • Smartlabs/Smarthome designed a complete circuit in the XFAB XH035 technology (2014).
  • Tokai University (Shimizu Lab) designed the SNX, a 16 bits processor in the ROHM 0.18µm (2010).
Useful Links

Feb 19, 2016

[video] How to Model RF Passive Devices: Spiral Inductors

How to Model RF Passive Devices: Spiral Inductors

With increasing operating frequencies, the modeling of passive components becomes increasingly important, and there exist no ready-to-use models for inductors, resistors, capacitors etc. Based on the other video of this fundamental device modeling series, (How to Model RF Capacitors and Resistors), this video extends the topic to modeling RF Spiral Inductors. It explains how to develop a Spice model based on verified S-Parameter measurements. Applying an easy to follow, step by step procedure, the video walks you through the entire modeling flow for on-wafer inductors, using the Keysight Measurement and Modeling Software IC-CAP.

The IC-CAP project (modeling spiral inductors with and without metal-1 shielding) can be downloaded together with a detailed pdf explaining the steps demonstrated in the video.

To download the project files referred to in this video visit:
http://www.keysight.com/find/eesof-how-to-model-spiral-inductors
Published on Feb 11, 2016

Feb 18, 2016