Showing posts with label SiO2. Show all posts
Showing posts with label SiO2. Show all posts

Nov 18, 2016

INFOS 2017 in Potsdam, Germany

20th Conference on “Insulating Films on Semiconductors” 
INFOS 2017
June 27th – 30th, 2017 in Potsdam, Germany

The INFOS conference is a prestigious biennial event which brings together electrical engineers, technologists, materials scientists, device physics and chemists from Europe and around the world to debate the latest development in thin insulating film technology and identify as well as address challenges ahead in this highly diversifying field [read more...]

Conference Topics:
  • High-k dielectrics, metal gate materials and SiO2 for future scaling
  • Gate stack materials for high mobility substrates (Ge, SiGe, GaN, III-V)
  • Stacked dielectrics for non-volatile memory (flash, nc-Si)
  • Dielectrics for resistive switching memories and spin memories
  • Dielectrics for DRAM and MIM
  • Low-k dielectrics
  • Semiconductors on insulators
  • Dielectrics for 2D materials, nanowires, 2D devices and carbon-based devices
  • Surface cleaning technologies
  • Physics and chemistry of dielectrics and defects
  • Characterization techniques for dielectrics and interfaces
  • Electrical reliability, leakage and modelling
  • Modelling of atomic structure of dielectrics, interfaces and thin films
  • Topological insulators
  • Ferroelectrics and functional oxides
  • Dielectrics and thin films for TFT, amorphous or organic devices and photovoltaics
  • Dielectrics for photonics and sensing