Showing posts with label Ge. Show all posts
Showing posts with label Ge. Show all posts

Jun 25, 2020

[paper] Ge Twin-Transistor NVM with FinFET Structure

Siao-Cheng Yan, Chong-Jhe Sun, Meng-Ju Tsai (Student Member, Ieee), Lun-Chun Chen,
Mu-Shih Yeh (Member, IEEE), Chien-Chang Li, Yao-Jen Lee and Yung-Chun Wu (Member, IEEE)
Germanium Twin-Transistor Nonvolatile Memory with FinFET Structure
IEEE J-EDS vol. 8, pp. 589-593, 2020
DOI: 10.1109/JEDS.2020.2999616

Abstract: Germanium is a promising alternative material for use in advanced technology nodes because it exhibits symmetrical mobility of holes and electrons. Embedded nonvolatile memory (NVM) is essential in electronic devices with integrated circuit (IC) technology, including future Ge-based technology. In this paper, we demonstrate Ge twin-transistor NVM with a fin field-effect transistor (FinFET) structure. This Ge twin-transistor NVM exhibits high programming and erasing speeds and satisfactory reliability. Moreover, the masks and fabrication process of this Ge twin-transistor NVM are identical to those of Ge-channel FinFETs. Thus, Ge twin-transistor NVM is a promising candidate for embedded NVM applications in future high-performance Ge complementary metal–oxide–semiconductor technology (CMOS).
FIG:  (a) Schematic top view of the Ge Twin NVM with one fin,
and (b) process flow of the Ge Twin NVM

Acknowledgements: This work was supported in part by Ministry of Science and Technology, Taiwan, under contract MOST 108-2221-E-007-003, and in part by Taiwan Semiconductor Research Institute, Taiwan.


Nov 18, 2016

INFOS 2017 in Potsdam, Germany

20th Conference on “Insulating Films on Semiconductors” 
INFOS 2017
June 27th – 30th, 2017 in Potsdam, Germany

The INFOS conference is a prestigious biennial event which brings together electrical engineers, technologists, materials scientists, device physics and chemists from Europe and around the world to debate the latest development in thin insulating film technology and identify as well as address challenges ahead in this highly diversifying field [read more...]

Conference Topics:
  • High-k dielectrics, metal gate materials and SiO2 for future scaling
  • Gate stack materials for high mobility substrates (Ge, SiGe, GaN, III-V)
  • Stacked dielectrics for non-volatile memory (flash, nc-Si)
  • Dielectrics for resistive switching memories and spin memories
  • Dielectrics for DRAM and MIM
  • Low-k dielectrics
  • Semiconductors on insulators
  • Dielectrics for 2D materials, nanowires, 2D devices and carbon-based devices
  • Surface cleaning technologies
  • Physics and chemistry of dielectrics and defects
  • Characterization techniques for dielectrics and interfaces
  • Electrical reliability, leakage and modelling
  • Modelling of atomic structure of dielectrics, interfaces and thin films
  • Topological insulators
  • Ferroelectrics and functional oxides
  • Dielectrics and thin films for TFT, amorphous or organic devices and photovoltaics
  • Dielectrics for photonics and sensing