[Book] Essential Semiconductor Physics

Essential Semiconductor Physics

Mark Lundstrom (Purdue University, USA)

New Era Electronics: A Lecture Notes Series

Pages: 424; October 2025

https://doi.org/10.1142/14454

This book is the fourth volume in the New Era Electronics lecture notes series, a compilation of volumes defining the important concepts tied to the electronics transition happening in the 21st century.

The lectures in this volume are about the underlying physics that makes semiconductor devices possible. The treatment is physical and intuitive; the text is descriptive, not heavily mathematical. The lectures are designed to be broadly accessible to students in science or engineering and to working engineers. They present an electrical engineering perspective, but those in other fields may find them a useful introduction to the approach that has guided the development of semiconductor technology for more than 75 years.

For those who use semiconductor devices, these lectures provide an understanding of the physics that underlies their operation. For those developing semiconductor technologies, these lectures provide a starting point for diving deeper into the physics, chemistry, and materials science relevant to semiconductors. Those who have taken advanced courses will see how specific topics fit into a broader framework. 

Book Sections

Front Matter; pp. i–xvi

Part 1: Materials Properties and Doping

• Lecture 1: Energy Levels to Energy Bands; pp. 3–16
• Lecture 2: Crystalline, Polycrystalline, and Amorphous Semiconductors; pp. 17–27
• Lecture 3: Miller Indices; pp. 29–39
• Lecture 4: Properties of Common Semiconductors; pp. 41–46
• Lecture 5: Free Carriers in Semiconductors; pp. 47–56
• Lecture 6: Doping; pp. 57–75

Part 2: Rudiments of Quantum Mechanics

• Lecture 7: The Wave Equation; pp. 79–99
• Lecture 8: Quantum Confinement; pp. 101–116
• Lecture 9: Quantum Tunneling and Reflection; pp. 117–129
• Lecture 10: Electron Waves in Crystals; pp. 131–145
• Lecture 11: Density of States; pp. 147–164

Part 3: Equilibrium Carrier Concentrations

• Lecture 12: The Fermi Function; pp. 167–177
• Lecture 13: Fermi-Dirac Integrals; pp. 179–190
• Lecture 14: Carrier Concentration vs. Fermi Level; pp. 191–203
• Lecture 15: Carrier Concentration vs. Doping Density; pp. 205–213
• Lecture 16: Carrier Concentration vs. Temperature; pp. 215–228

Part 4: Carrier Transport, Recombination, and Generation

• Lecture 17: Current Equation; pp. 231–250
• Lecture 18: Drift Current; pp. 251–270
• Lecture 19: Diffusion Current; pp. 271–280
• Lecture 20: Drift-Diffusion Equation; pp. 281–288
• Lecture 21: Carrier Recombination; pp. 289–308
• Lecture 22: Carrier Generation; pp. 309–323

Part 5: The Semiconductor Equations

• Lecture 23: The Semiconductor Equations; pp. 327–342
• Lecture 24: Energy Band Diagrams; pp. 343–361
• Lecture 25: Quasi-Fermi Levels; pp. 363–374
• Lecture 26: Minority Carrier Diffusion Equation; pp. 375–396

Back Matter; pp. 397–406

IWPSD 2023

XXII International Workshop on Physics of Semiconductor Devices

Research Park, IIT Madras, Chennai - 600036

Dec. 13-17, 2023

organised by

Indian Institute of Technology Madras

@ Research Park, IIT Madras

in association with

Society for Semiconductor Devices (SSD)

Semiconductor Society (India)

The XXII International Workshop on the Physics of Semiconductor Devices (IWPSD 2023) is being jointly organized by the Indian Institute of Technology Madras in collaboration with Society for Semiconductor Devices and Semiconductor Society (India). This series of biennial workshops, started in 1981, provides a global forum for interaction between scientists and technologists working in the area of semiconductor materials and devices.

The topics to be covered in the Workshop are, but not limited to:

• 2D Materials and Devices
• Crystal Growth and Epitaxy
• Device Modelling and Simulation
• Devices for Quantum Technology
• II - VI and Oxide Semiconductors
• III - V Semiconductors
• Memory and Logic Devices
• MEMS, NEMS and Sensors
• Organic and Flexible Electronics
• Photovoltaics
• Power Semiconductor Devices
• Optoelectronics

IWPSD 2023 Registration is open. Registration fees includes admission to all conference sessions, daily lunch and tea breaks, conference kit and dinner/banquet.

Contact: <admin.iwpsd2023@ee.iitm.ac.in>

[book] Negative Capacitance Field Effect Transistors

Negative Capacitance Field Effect Transistors

Physics, Design, Modeling and Applications

Edited By Young Suh Song, Shubham Tayal, Shiromani Balmukund Rahi, Abhishek Kumar Upadhyay

Pages 63 Color & 7 B/W Illustrations

ISBN 9781032445311 176 Sept. 29, 2023 by CRC Press

Description

This book aims to provide information in the ever-growing field of low-power electronic devices and their applications in portable device, wireless communication, sensor, and circuit domains. Negative Capacitance Field Effect Transistor: Physics, Design, Modeling and Applications, discusses low-power semiconductor technology and addresses state-of-art techniques such as negative-capacitance field-effect transistors and tunnel field-effect transistors. The book is broken up into four parts. Part one discusses foundations of low-power electronics including the challenges and demands and concepts like subthreshold swing. Part two discusses the basic operations of negative-capacitance field-effect transistor (NC-FET) and Tunnel Field-effect Transistor (TFET). Part three covers industrial applications including cryogenics and biosensors with NC-FET. This book is designed to be one-stop guidebook for students and academic researchers, to understand recent trends in the IT industry and semiconductor industry. It will also be of interest to researchers in the field of nanodevices like NC-FET, FinFET, Tunnel FET, and device-circuit codesign.

Table of Contents

Chapter 1 Recent Challenges in IT and Semiconductor Industry: From Von Neumann Architecture to the Future

Young Suh Song, Shiromani Balmukund Rahi, Navjeet Bagga, Sunil Rathore, Rajeewa Kumar Jaisawal, P. Vimala, Neha Paras, K. Srinivasa Rao

Chapter 2 Technical Demands of Low-Power Electronics

Soha Maqbool Bhat, Pooran Singh, Ramakant Yadav, Shiromani Balmukund Rahi, Billel Smaani, Abhishek Kumar Upadhyay, Young Suh Song

Chapter 3 Negative capacitance Field Effect Transistors: Concept and Technology

Ball Mukund Mani Tripathi

Chapter 4 Basic Operation Principle of Negative Capacitance Field Effect Transistor

Malvika, Bijit Choudhuri, Kavicharan Mummaneni

Chapter 5 Basic Operational Principle of Anti-ferroelectric Materials and Ferroelectric Materials

Umesh Chandra Bind, Shiromani Balmukund Rahi

Chapter 6 Basic Operation Principle of Optimized NCFET: Amplification Perspective

S. Yadav, P.N Kondekar, B. Awadhiya

Chapter 7 Spin Based Magnetic Devices With Spintronics

Asif Rasool, Shahnaz kossar, R.Amiruddin

Chapter 8 Mathematical Approach for Future Semiconductor Roadmap

Shiromani Balmukund Rahi,Abhishek Kumar Upadhyay, Young Suh Song, Nidhi Sahni, Ramakant Yadav, Umesh Chandra Bind,Guenifi Naima,Billel Smaani,Chandan Kumar Pandey,Samir Labiod, T.S. Arun Samul,Hanumanl Lal, H. Bijo Josheph

Chapter 9 Mathematical Approach for Foundation of Negative Capacitance Technology

Shiromani Balmukund Rahi,Abhishek Kumar Upadhyay, Young Suh Song, Nidhi Sahni, Ramakant Yadav, Umesh Chandra Bind,Guenifi Naima,Billel Smaani,Chandan Kumar Pandey,Samir Labiod, T.S. Arun Samul,Hanumanl Lal, H. Bijo Josheph